Free Carriers versus Excitons in CH3NH3PbI3 Perovskite Thin Films at Low Temperatures: Charge Transfer from the Orthorhombic Phase to the Tetragonal Phase

2016 ◽  
Vol 7 (13) ◽  
pp. 2316-2321 ◽  
Author(s):  
Le Quang Phuong ◽  
Yasuhiro Yamada ◽  
Masaya Nagai ◽  
Naoki Maruyama ◽  
Atsushi Wakamiya ◽  
...  
Keyword(s):  
Thin Films ◽  
Charge Transfer ◽  
Tetragonal Phase ◽  
Low Temperatures ◽  
Orthorhombic Phase ◽  
Free Carriers

Inhibition of light emission from the metastable tetragonal phase at low temperatures in island-like films of lead iodide perovskites

Nanoscale ◽  
2019 ◽  
Vol 11 (46) ◽  
pp. 22378-22386 ◽  
Author(s):  
Raquel Chuliá-Jordán ◽  
Natalia Fernández-Delgado ◽  
Emilio J. Juárez-Pérez ◽  
Iván Mora-Seró ◽  
Miriam Herrera ◽  
...  
Keyword(s):  
Thin Films ◽  
Tetragonal Phase ◽  
Low Temperatures ◽  
Light Emission ◽  
Orthorhombic Phase ◽  
Lead Iodide ◽  
Polycrystalline Thin Films ◽  
Excitonic Recombination

In polycrystalline thin films of MA-PbI3 different tetragonal-defective domains are observed in photoluminescence at low temperatures, whereas the excitonic recombination in the orthorhombic phase is dominating in island-like films.

ANOMALOUS MAGNETIZATION PROCESSES AT LOW TEMPERATURES IN COMPOSITIONALLY MODULATED Co/Mn THIN FILMS

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-1753-C8-1754
Author(s):  
H. Sakakima ◽  
M. Tessier ◽  
R. Krishnan ◽  
E. Hirota
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Magnetization Processes

Phase transformation and preferred orientation in carboxylate derived ZrO2 thin films on silicon substates

1992 ◽  
Vol 7 (11) ◽  
pp. 3065-3071 ◽  
Author(s):  
Peir-Yung Chu ◽  
Isabelle Campion ◽  
Relva C. Buchanan
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Phase Transformation ◽  
Heating Rate ◽  
Tetragonal Phase ◽  
Monoclinic Phase ◽  
Preferred Orientation ◽  
Si Substrate ◽  
Interfacial Diffusion ◽  
Deposited Films

Phase transformation and preferred orientation in ZrO2 thin films, deposited on Si(111) and Si(100) substrates, and prepared by heat treatment from carboxylate solution precursors were investigated. The deposited films were amorphous below 450 °C, transforming gradually to the tetragonal and monoclinic phases on heating. The monoclinic phase developed from the tetragonal phase displacively, and exhibited a strong (111) preferred orientation at temperature as low as 550 °C. The degree of preferred orientation and the tetragonal-to-monoclinic phase transformation were controlled by heating rate, soak temperature, and time. Interfacial diffusion into the film from the Si substrate was negligible at 700 °C and became significant only at 900 °C, but for films thicker than 0.5 μm, overall preferred orientation exceeded 90%.

scholarly journals Critical effect of the bottom electrode on the ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films

2021 ◽  
Author(s):  
Saúl Estandía ◽  
Jaume Gàzquez ◽  
María Varela ◽  
Nico Dix ◽  
Mengdi Qian ◽  
...  
Keyword(s):  
Thin Films ◽  
Bottom Electrode ◽  
Orthorhombic Phase ◽  
Epitaxial Films ◽  
Critical Effect

Comparison of a set of perovskite electrodes shows that La1−x(Ca,Sr)xMnO3 is critical to stabilize the ferroelectric orthorhombic phase in epitaxial films. The stabilization is favored if the La content in the manganite is high.

scholarly journals Structural defects in ZnO thin films grown by atomic layer deposition at low temperatures

2021 ◽  
Vol 27 (S1) ◽  
pp. 2660-2662
Author(s):  
David Elam ◽  
Eduardo Ortega ◽  
Andrey Chabanov ◽  
Arturo Ponce
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Low Temperatures ◽  
Atomic Layer ◽  
Structural Defects ◽  
Zno Thin Films ◽  
Layer Deposition

Hydrothermal synthesis of heteroepitaxial Pb(ZrxTi1−x)O3 thin films at 90–150 °C

1997 ◽  
Vol 12 (5) ◽  
pp. 1176-1178 ◽  
Author(s):  
A. T. Chien ◽  
J. S. Speck ◽  
F. F. Lange
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
High Dielectric Constant ◽  
Ambient Pressure ◽  
Random Access ◽  
Random Access Memory ◽  
Molar Ratio ◽  
Access Memory ◽  
Eds Analysis ◽  
High Dielectric

Pb(ZrxTi1−x)O3 and PbZrO3 heteroepitaxial thin films were produced in an aqueous solution (10 M KOH) at ambient pressure and low temperatures (90–150 °C) on (001) SrTiO3 and LaAlO3 single crystal substrates. Growth of the Pb(ZrxTi1−x)O3 and PbZrO3 thin films initiates by the formation of {100} faceted islands. Energy dispersive spectroscopy (EDS) analysis of the Pb(ZrxTi1−x)O3 thin film shows that the Zr: Ti ratio is 45: 56, nearly identical to the molar ratio of the precursors. This route might provide a viable low temperature alternative for the formation of high dielectric constant thin films for applications such as dynamic random access memory (DRAM).

Contrasting effects of compressive and tensile strain and doping-induced opening of charge-transfer gap in NdNi[sub 0.90]Mn[sub 0.10]O[sub 3] thin films

2013 ◽  
Author(s):  
Mahesh Chandra ◽  
Amit Khare ◽  
Fozia Aziz ◽  
Rakesh Rana ◽  
D. S. Rana ◽  
...  
Keyword(s):  
Thin Films ◽  
Charge Transfer ◽  
Tensile Strain

Phase transition and piezoelectricity of sol–gel-processed Sm-doped BiFeO3 thin films on Pt(111)/Ti/SiO2/Si substrates

2015 ◽  
Vol 3 (9) ◽  
pp. 2115-2122 ◽  
Author(s):  
Wei Sun ◽  
Jing-Feng Li ◽  
Qi Yu ◽  
Li-Qian Cheng
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Sol Gel ◽  
Orthorhombic Phase ◽  
High Quality ◽  
Si Substrates ◽  
Bifeo3 Thin Films ◽  
Gel Processing

We prepared high-quality Bi1−xSmxFeO3 films on Pt(111)/Ti/SiO2/Si substrates by sol–gel processing and found rhombohedral–orthorhombic phase transition with enhanced piezoelectricity.

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