scholarly journals High Modulation Bandwidth of Semipolar (11–22) InGaN/GaN LEDs with Long Wavelength Emission

2020 ◽  
Vol 2 (8) ◽  
pp. 2363-2368 ◽  
Author(s):  
Jack IH. Haggar ◽  
Yuefei Cai ◽  
Suneal S. Ghataora ◽  
Richard M. Smith ◽  
Jie Bai ◽  
...  
Keyword(s):  
Modulation Bandwidth ◽  
Long Wavelength ◽  
High Modulation ◽  
Wavelength Emission

Optically-pumped long-wavelength vertical-cavity surface-emitting laser with high modulation bandwidth

2005 ◽  
Vol 86 (6) ◽  
pp. 061108
Author(s):  
M. V. Ramana Murty ◽  
D. Xu ◽  
C.-C. Lin ◽  
C.-L. Shieh ◽  
J. Y. Tsao ◽  
...  
Keyword(s):  
Cavity Surface ◽  
Modulation Bandwidth ◽  
Optically Pumped ◽  
Long Wavelength ◽  
High Modulation ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

Influence of solvent polarity on the dual fluorescence of p-N,N-dimethylaminobenzonitrile: An AM1 theoretical study

1990 ◽  
Vol 55 (8) ◽  
pp. 1891-1895 ◽  
Author(s):  
Peter Ertl
Keyword(s):  
Excited State ◽  
Theoretical Study ◽  
Solvent Polarity ◽  
Semiempirical Method ◽  
Dual Fluorescence ◽  
Long Wavelength ◽  
Polar Media ◽  
Wavelength Emission ◽  
Ground State Geometry ◽  
Influence Of Solvent

Twisting of the NMe2 group in p-N,N-dimethylaminobenzonitrile (DMABN) was investigated using AM1 semiempirical method with configuration interaction. Effect of polar media was considered by placing + and - charge centers ("sparkles") at appropriate places opposite the molecule. Optimized ground state geometry of DMABN is slightly twisted with the lowest vertical excited state of 1B character. As the polarity of media increases and/or the - NMe2 group twists, the symmetric 1A excited state having considerable charge separation becomes energetically favorable. Anomalous long-wavelength emission of DMABN comes from this state.

Fast speed switching response and high modulation signal processing bandwidth through LiNbO3 electro-optic modulators

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Mahmoud M. A. Eid ◽  
Ahmed Nabih Zaki Rashed ◽  
Iraj S. Amiri
Keyword(s):  
Near Infrared ◽  
Infrared Region ◽  
Modulation Bandwidth ◽  
Fast Speed ◽  
Electrooptic Modulators ◽  
High Modulation ◽  
Data Rates ◽  
Electro Optic ◽  
Modulation Signal ◽  
Speed Response

AbstractThis work outlined the fast speed response and high modulation bandwidth through LiNbO3 electro-optic modulators. The refractive index is analyzed to estimate the switching voltage and modulation bandwidth for these modulators. The modulation voltage and data transmission data rates are analyzed and discussed clearly through LiNbO3 electro-optic modulators. The modulator’s performance efficiency is upgraded with the optimum modulator length of 10 mm and its thickness of 2 mm. The proposed modulators are compared with GaAs electrooptic modulators under various electro-optic modulators dimensions at 1300 nm near-infrared region and room temperature.

scholarly journals Polymer colour converter with very high modulation bandwidth for visible light communications

2017 ◽  
Vol 5 (35) ◽  
pp. 8916-8920 ◽  
Author(s):  
D. A. Vithanage ◽  
A. L. Kanibolotsky ◽  
S. Rajbhandari ◽  
P. P. Manousiadis ◽  
M. T. Sajjad ◽  
...  
Keyword(s):  
Visible Light ◽  
High Speed ◽  
Visible Light Communication ◽  
Modulation Bandwidth ◽  
Visible Light Communications ◽  
Semiconducting Polymer ◽  
High Modulation ◽  
Very High

We report the synthesis, photophysics and application of a novel semiconducting polymer as a colour converter for high speed visible light communication.

1.55 μm High Speed Partly Gain-Coupled DFB Lasers with Periodically Etched Strained-Layer Quantum Wells

1997 ◽  
Vol 08 (03) ◽  
pp. 475-494 ◽  
Author(s):  
Toshihiko Makino
Keyword(s):  
Quantum Wells ◽  
High Speed ◽  
Carrier Transport ◽  
Stop Band ◽  
Longitudinal Distribution ◽  
Modulation Bandwidth ◽  
Carrier Injection ◽  
Strained Layer ◽  
High Modulation ◽  
Dfb Laser

The high speed performance of partly gain-coupled (GC) DFB lasers consisting of periodically etched strained-layer quantum wells (QW's) is reviewed with comparisons to the equivalent index-coupled (IC) DFB lasers with the same active layers. It is shown that the GC DFB laser has a –3 dB modulation bandwidth of 22 GHz at 10 mW with a stable single mode oscillation at the longer side of the Bragg Stop-band due to in-phase gain coupling. A theoretical analysis is also presented based on the local-normal-mode transfer-matrix laser model which takes into account both the longitudinal distribution of laser parameters and carrier transport effects. The mechanism for high modulation bandwidth of the GC DFB laser is attributed to a higher differential gain due to a reduced carrier transport time which is provided by an effecient carrier injection from the longitudinal etched interface of the QW's.

Controllable supramolecular chain aggregation through nano-steric hindrance functionalization for multi-color larger-area electroluminescence

2018 ◽  
Vol 6 (26) ◽  
pp. 7018-7023 ◽  
Author(s):  
Man Xu ◽  
Wei-Biao Wang ◽  
Lu-Bing Bai ◽  
Meng-Na Yu ◽  
Ya-Min Han ◽  
...  
Keyword(s):  
Steric Hindrance ◽  
Device Performance ◽  
Effective Strategy ◽  
Long Wavelength ◽  
Wavelength Emission ◽  
Supramolecular Chain

Suppression of hierarchical chain aggregationvianano-steric hindrance functionalization is an effective strategy to restrain long-wavelength emission and improving the device performance.

First-principles identification of VI+Cui defect cluster in cuprous iodide: origin of red light photoluminescence

2022 ◽  
Author(s):  
Dingrong Liu ◽  
Zenghua Cai ◽  
Yu-Ning Wu ◽  
Shiyou Chen
Keyword(s):  
First Principles ◽  
Light Emission ◽  
Red Light ◽  
Defect Cluster ◽  
Intrinsic Point Defect ◽  
Long Wavelength ◽  
Type Semiconductor ◽  
Display Technology ◽  
Wavelength Emission ◽  
P Type

Abstract The γ-phase Cuprous Iodide (CuI) emerges as a promising transparent p-type semiconductor for next-generation display technology because of its wide direct band gap, intrinsic p-type conductivity, and high carrier mobility. Two main peaks are observed in its photoluminescence (PL). One is short wavelength (410-430 nm) emission, which is well attributed to the electronic transitions at Cu vacancy, whereas the other long wavelength emission (680-720 nm) has not been fully understood. In this paper, through first-principles simulations, we investigate the formation energies and emission line shape for various defects, and discover that the intrinsic point defect cluster V_I+Cu_i^(2+) is the source of the long wavelength emission. Our finding is further supported by the prediction that the defect concentration decreases dramatically as the chemical condition changes from Cu-rich to I-rich, explaining the significant reduction in the red light emission if CuI is annealed in abundant I environment.

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