scholarly journals Capillary-force-induced collapse lithography for controlled plasmonic nanogap structures

2020 ◽  
Vol 6 (1) ◽  
Author(s):  
Inki Kim ◽  
Jungho Mun ◽  
Wooseup Hwang ◽  
Younghwan Yang ◽  
Junsuk Rho
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Capillary Force ◽  
Development Time ◽  
Electron Dose ◽  
Force Effect ◽  
Straightforward Method ◽  
Strong Focusing ◽  
Fabrication Parameters ◽  
Collapse Process

Abstract The capillary force effect is one of the most important fabrication parameters that must be considered at the micro/nanoscale because it is strong enough to deform micro/nanostructures. However, the deformation of micro/nanostructures due to such capillary forces (e.g., stiction and collapse) has been regarded as an undesirable and uncontrollable obstacle to be avoided during fabrication. Here, we present a capillary-force-induced collapse lithography (CCL) technique, which exploits the capillary force to precisely control the collapse of micro/nanostructures. CCL uses electron-beam lithography, so nanopillars with various shapes can be fabricated by precisely controlling the capillary-force-dominant cohesion process and the nanopillar-geometry-dominant collapse process by adjusting the fabrication parameters such as the development time, electron dose, and shape of the nanopillars. CCL aims to achieve sub-10-nm plasmonic nanogap structures that promote extremely strong focusing of light. CCL is a simple and straightforward method to realize such nanogap structures that are needed for further research such as on plasmonic nanosensors.

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

Comparison of Nanosized Pattern of Calixarene and ZEP520 Resists by Using Energy Deposition Distribution

2013 ◽  
Vol 534 ◽  
pp. 107-112
Author(s):  
Hui Zhang ◽  
Takuya Komori ◽  
Zulfakri bin Mohamad ◽  
You Yin ◽  
Sumio Hosaka
Keyword(s):  
Electron Beam ◽  
Energy Density ◽  
Probe Beam ◽  
Electron Beam Lithography ◽  
Capillary Force ◽  
Energy Deposition ◽  
Critical Energy ◽  
Critical Energy Density ◽  
20 Nm ◽  
Positive Resist

We numerically modeled the process of exposure and development of the calixarene negative resist and ZEP520 positive resist in electron beam lithography (EBL) in order to understand the limitation of nanopatterning of these two resists and to improve the resolution of the patterning. From the calculation of energy deposition distribution (EDD) in resist at various beam diameters, it is obvious that the fine probe beam with a diameter of 2 nm and thin resist should be adopted for formation of very fine dots. The simulation of resist development profile indicates that a dot size of 2 nm with a pitch of 20 nm can even be obtained at a higher critical energy density by using calixarene resist, while it cannot form the small pattern by using the ZEP520 resist because of the capillary force.

Temperature Dependence of the Critical Electron Dose for Fatty Acid Monolayers

1982 ◽  
Vol 40 ◽  
pp. 78-79
Author(s):  
Kenneth H. Downing ◽  
Robert M. Glaeser
Keyword(s):  
Electron Beam ◽  
Fatty Acid ◽  
Inelastic Scattering ◽  
Temperature Dependence ◽  
Structural Damage ◽  
Direct Result ◽  
Second Step ◽  
Strong Temperature Dependence ◽  
Electron Dose ◽  
Covalent Bonds

The structural damage of molecules irradiated by electrons is generally considered to occur in two steps. The direct result of inelastic scattering events is the disruption of covalent bonds. Following changes in bond structure, movement of the constituent atoms produces permanent distortions of the molecules. Since at least the second step should show a strong temperature dependence, it was to be expected that cooling a specimen should extend its lifetime in the electron beam. This result has been found in a large number of experiments, but the degree to which cooling the specimen enhances its resistance to radiation damage has been found to vary widely with specimen types.

Fabrication of Si photonic waveguides by electron beam lithography using improved proximity effect correction

2020 ◽  
Vol 59 (12) ◽  
pp. 126502
Author(s):  
Moataz Eissa ◽  
Takuya Mitarai ◽  
Tomohiro Amemiya ◽  
Yasuyuki Miyamoto ◽  
Nobuhiko Nishiyama
Keyword(s):  
Electron Beam ◽  
Proximity Effect ◽  
Electron Beam Lithography ◽  
Photonic Waveguides ◽  
Proximity Effect Correction

Salicidation process for submicrometre gate MOSFET fabrication using a resistless electron beam lithography process

1999 ◽  
Vol 35 (15) ◽  
pp. 1283 ◽  
Author(s):  
S. Michel ◽  
E. Lavallée ◽  
J. Beauvais ◽  
J. Mouine
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Lithography Process

scholarly journals Nanooptical elements for visual verification

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Alexander Goncharsky ◽  
Anton Goncharsky ◽  
Dmitry Melnik ◽  
Svyatoslav Durlevich
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Mass Production ◽  
Optical Element ◽  
Visual Image ◽  
Zero Order ◽  
Diffractive Optical Elements ◽  
Optical Elements ◽  
Standard Equipment ◽  
Diffractive Element

AbstractThis paper focuses on the development of flat diffractive optical elements (DOEs) for protecting banknotes, documents, plastic cards, and securities against counterfeiting. A DOE is a flat diffractive element whose microrelief, when illuminated by white light, forms a visual image consisting of several symbols (digits or letters), which move across the optical element when tilted. The images formed by these elements are asymmetric with respect to the zero order. To form these images, the microrelief of a DOE must itself be asymmetric. The microrelief has a depth of ~ 0.3 microns and is shaped with an accuracy of ~ 10–15 nm using electron-beam lithography. The DOEs developed in this work are securely protected against counterfeiting and can be replicated hundreds of millions of times using standard equipment meant for the mass production of relief holograms.

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