scholarly journals Positive-to-negative subthreshold swing of a MOSFET tuned by the ferroelectric switching dynamics of BiFeO3

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Chuanchuan Liu ◽  
Yuchen Wang ◽  
Haoyang Sun ◽  
Chao Ma ◽  
Zhen Luo ◽  
...  
Keyword(s):  
Field Effect Transistors ◽  
Drain Current ◽  
Polarization Switching ◽  
Subthreshold Swing ◽  
Oxide Semiconductor ◽  
Ferroelectric Capacitor ◽  
Voltage Drops ◽  
Switching Dynamics ◽  
Ferroelectric Capacitors ◽  
Ferroelectric Switching

AbstractFerroelectricity can reduce the subthreshold swing (SS) of metal-oxide-semiconductor field-effect transistors (MOSFETs) to below the room-temperature Boltzmann limit of ~60 mV/dec and provides an important strategy to achieve a steeper SS. Surprisingly, by carefully tuning the polarization switching dynamics of BiFeO3 ferroelectric capacitors the SS of a commercial power MOSFET can even be tuned to zero or a negative value, i.e., the drain current increases with a constant or decreasing gate voltage. In particular, in addition to the positive SS of lower than 60 mV/dec, the zero and negative SS can be established with a drain current spanning for over seven orders of magnitude. These intriguing phenomena are explained by the ferroelectric polarization switching dynamics, which change the charge redistributions and accordingly affect the voltage drops across the ferroelectric capacitor and MOSFET. This study provides deep insights into understanding the steep SS in ferroelectric MOSFETs, which could be promising for designing advanced MOSFETs with an ultralow and tunable SS.

AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors (MOSHFETs) with the Delta-Doped Barrier Layer

2002 ◽  
Vol 743 ◽  
Author(s):  
Z. Y. Fan ◽  
J. Li ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
Y. Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Cutoff Frequency ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Heterostructure ◽  
Heterostructure Field Effect Transistors ◽  
Gate Control

ABSTRACTThe fabrication and characterization of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with the δ-doped barrier are reported. The incorporation of the SiO2 insulated-gate and the δ-doped barrier into HFET structures reduces the gate leakage and improves the 2D channel carrier mobility. The device has a high drain-current-driving and gate-control capabilities as well as a very high gate-drain breakdown voltage of 200 V, a cutoff frequency of 15 GHz and a maximum frequency of oscillation of 34 GHz for a gate length of 1 μm. These characteristics indicate a great potential of this structure for high-power-microwave applications.

Change in Characteristics of SiC MOSFETs by Gamma-Ray Irradiation at High Temperature

2016 ◽  
Vol 858 ◽  
pp. 860-863 ◽  
Author(s):  
Takuma Matsuda ◽  
Takashi Yokoseki ◽  
Satoshi Mitomo ◽  
Koichi Murata ◽  
Takahiro Makino ◽  
...  
Keyword(s):  
Field Effect ◽  
Gamma Ray ◽  
Field Effect Transistors ◽  
Absorbed Dose ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Radiation Response ◽  
Electrical Characteristics ◽  
Gamma Ray Irradiation

Radiation response of 4H-SiC vertical power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) was investigated at 150°C up to 10.4 MGy. Until irradiation at 1.2 MGy, the drain current – gate voltage curves of the SiC MOSFETs shifted to the negative voltage side, and the leakage of drain current at gate voltages below threshold voltage increased with increasing absorbed dose. However, no significant change in the electrical characteristics of SiC MOSFETs was observed at doses above 1.2 MGy. For blocking characteristics, there were no degradations of the SiC MOSFETs irradiated at 150°C even after irradiated at 10.4 MGy.

Radiation Hardness of 4H-SiC JFETs in MGy Dose Ranges

2020 ◽  
Vol 1004 ◽  
pp. 1109-1114
Author(s):  
Akinori Takeyama ◽  
Keigo Shimizu ◽  
Takahiro Makino ◽  
Yuichi Yamazaki ◽  
Shin Ichiro Kuroki ◽  
...  
Keyword(s):  
Gamma Rays ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Oxide Semiconductor ◽  
Leakage Currents ◽  
Transfer Characteristics ◽  
Pristine Sample ◽  
Significant Difference ◽  
Apparent Shift ◽  
Channel Region

Silicon carbide junction field effect transistors (SiC JFETs) were irradiated with gamma-rays up to 9 MGy (H2O). With increasing dose, apparent shift of drain current-gate voltage (ID-VG) curves to negative voltage side as observed for SiC metal oxide semiconductor (MOS) FETs did not take place. No significant difference is observed between drain and gate leakage currents of irradiated JFETs. This strongly indicates that defects as leakage paths were introduced into not bulk region but the interface between bulk and the passivation layer of SiO2. While, the transfer characteristics including threshold voltage and transconductance were slightly changed compared with the pristine sample. After drain voltage (VD) was abruptly applied to 6 V, ID at VG= 0 V increased slowly as a function of time. This indicates that variation of transfer characteristics is attributed to capture and emission process at defects generated in channel region.

scholarly journals Subthreshold Characteristics of a Metal-Oxide–Semiconductor Field-Effect Transistor with External PVDF Gate Capacitance

Crystals ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 673
Author(s):  
Jing-Jenn Lin ◽  
Ji-Hua Tao ◽  
You-Lin Wu
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Subthreshold Slope ◽  
Ferroelectric Capacitor ◽  
In Series ◽  
Effect Transistor

An organic ferroelectric capacitor, using polyvinylidene difluoride (PVDF) as the dielectric, was fabricated. By connecting the PVDF capacitor in series to the gate of a commercially purchased metal-oxide–semiconductor field-effect transistor (MOSFET), drain current (ID)–drain voltage (VD) characteristics and drain current (ID)–gate voltage (VG) characteristics were measured. In addition, the subthreshold slopes of the MOSFET were determined from the ID–VG curves. It was found that the subthreshold slope could be effectively reduced by 23% of its original value when the PVDF capacitor was added to the gate of the MOSFET.

InGaAs Metal Oxide Semiconductor Devices with Ga2O3(Gd2O3) High-κ Dielectrics for Science and Technology beyond Si CMOS

MRS Bulletin ◽  
2009 ◽  
Vol 34 (7) ◽  
pp. 514-521 ◽  
Author(s):  
M. Hong ◽  
J. Kwo ◽  
T.D. Lin ◽  
M.L. Huang
Keyword(s):  
Metal Oxide ◽  
Field Effect Transistors ◽  
Chemical Properties ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Critical Material ◽  
Equivalent Thickness ◽  
Inversion Channel ◽  
Complementary Mos Technology

AbstractAn overview is given on scientific and device advances for InGaAs metal oxide semiconductor heterostructures and inversion channel metal oxide semiconductor field-effect transistors (MOSFETs), with emphasis on results using ultrahigh vacuum-deposited Ga2O3(Gd2O3) [GGO] as high-κ dielectrics. Regardless of the approaches used to deposit high-κ dielectrics on InGaAs, critical material and electrical parameters of fabricating inversion channel InGaAs MOSFETs must be ready for complementary MOS technology beyond the 16-nm node, and some of these parameters have been achieved. These parameters include low interfacial density of states; low electrical leakage currents; high-temperature (800–900°C) thermal stability for high-κ dielectrics/InGaAs heterostructures, where the amorphous oxide structure and atomically smooth and sharp interfaces are retained; and oxide scalability with a capacitance equivalent thickness of ≤1 nm. Interfacial chemical properties and band parameters, which are important for device design in the high κs/InGaAs, have been thoroughly studied. Representative enhancement-mode InGaAs MOSFETs are compared and correlated with the interfacial structures. Deposition methods and electrical characteristics of high-κ dielectrics on InGaA are discussed. The inversion channel InGaAs MOSFETs of 0.4–1.0 μm gate length have exhibited excellent device performance in terms of drain current and transconductance.

Evaluation of Degradation due to Electron Irradiation of Si1-xCx S/D n-type MOSFETs

2014 ◽  
Vol 778-780 ◽  
pp. 1197-1200
Author(s):  
Masato Hori ◽  
Yuki Asai ◽  
Masashi Yoneoka ◽  
Isao Tsunoda ◽  
Kenichiro Takakura ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Electron Mobility ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Oxide Semiconductor ◽  
Enhancement Effect ◽  
Device Performance ◽  
Irradiation Effects ◽  
Radiation Induced ◽  
Improve Device

To solve the problem of the limitation to improve device performance in standard Si integration technologies and to develop radiation-harsh devices, the irradiation effects of Si1-xCx source/drain (S/D) n-type metal oxide semiconductor field effect transistors (n-MOSFETs) have been investigated. It is shown that the drain current and the maximum electron mobility of Si1-xCx n-MOSFETs decrease by electron irradiation. The reduction of the device performance can be explained by the radiation-induced lattice defects in the devices. However, the electron mobility enhancement effect by adding C remained after an electron irradiation up to 5×1017 e/cm2.

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