scholarly journals Temperature-dependent optical and vibrational properties of PtSe2 thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Desman P. Gulo ◽  
Han Yeh ◽  
Wen-Hao Chang ◽  
Hsiang-Lin Liu

Abstract PtSe2 has received substantial research attention because of its intriguing physical properties and potential practical applications. In this paper, we investigated the optical properties of bilayer and multilayer PtSe2 thin films through spectroscopic ellipsometry over a spectral range of 0.73–6.42 eV and at temperatures between 4.5 and 500 K. At room temperature, the spectra of refractive index exhibited several anomalous dispersion features below 1000 nm and approached a constant value in the near-infrared frequency range. The thermo-optic coefficients of bilayer and multilayer PtSe2 thin films were (4.31 ± 0.04) × 10−4/K and (–9.20 ± 0.03) × 10−4/K at a wavelength of 1200 nm. Analysis of the optical absorption spectrum at room temperature confirmed that bilayer PtSe2 thin films had an indirect band gap of approximately 0.75 ± 0.01 eV, whereas multilayer PtSe2 thin films exhibited semimetal behavior. The band gap of bilayer PtSe2 thin films increased to 0.83 ± 0.01 eV at 4.5 K because of the suppression of electron–phonon interactions. Furthermore, the frequency shifts of Raman-active Eg and A1g phonon modes of both thin films in the temperature range between 10 and 500 K accorded with the predictions of the anharmonic model. These results provide basic information for the technological development of PtSe2-based optoelectronic and photonic devices at various temperatures.

2014 ◽  
Vol 940 ◽  
pp. 11-15
Author(s):  
Jun Qin Feng ◽  
Jun Fang Chen

Zinc nitride films were deposited by ion sources-assisted magnetron sputtering with the use of Zn target (99.99% purity) on 7059 glass substrates. The films were characterized by XRD, SEM and EDS, the results of which show that the polycrystalline zinc nitride thin film can be grown on the glass substrates, the EDS spectrum confirmed the chemical composition of the films and the SEM images revealed that the zinc nitride thin films have a dense structure. Ultraviolet-visible-near infrared spectrophotometer was used to study the transmittance behaviors of zinc nitride thin films, which calculated the optical band gap by Davis Mott model. The results of the fluorescence emission spectra show the zinc nitride would be a direct band gap semiconductor material.


2007 ◽  
Vol 4 (4) ◽  
pp. 647-652
Author(s):  
Baghdad Science Journal

Zinc sulfide(ZnS) thin films of different thickness were deposited on corning glass with the substrate kept at room temperature and high vacuum using thermal evaporation technique.the film properties investigated include their absorbance/transmittance/reflectance spectra,band gap,refractive index,extinction coefficient,complex dielectric constant and thickness.The films were found to exhibt high transmittance(59-98%) ,low absorbance and low reflectance in the visible/near infrared region up to 900 nm..However, the absorbance of the films were found to be high in the ultra violet region with peak around 360 nm.The thickness(using optical interference fringes method) of various films thichness(100,200,300,and 400) nm.The band gap measured was found to be in the range (3.52 -3.78 )eV.


2019 ◽  
Vol 109 ◽  
pp. 101-106 ◽  
Author(s):  
Dongsheng Gao ◽  
Xiangdong Gao ◽  
Yongqing Wu ◽  
Tongtong Zhang ◽  
Jingnan Yang ◽  
...  

2017 ◽  
Vol 49 (2) ◽  
pp. 167-174 ◽  
Author(s):  
Milica Petrovic ◽  
Martina Gilic ◽  
Jovana Cirkovic ◽  
Maja Romcevic ◽  
Nebojsa Romcevic ◽  
...  

Copper selenide thin films of three different thicknesses have been prepared by vacuum evaporation method on a glass substrate at room temperature. The optical properties of the films were investigated by UV-VIS-NIR spectroscopy and photoluminescence spectroscopy. Surface morphology was investigated by field-emission scanning electron microscopy. Copper selenide exhibits both direct and indirect transitions. The band gap for direct transition is found to be ~2.7 eV and that for indirect transition it is ~1.70 eV. Photoluminescence spectra of copper selenide thin films have also been analyzed, which show emission peaks at 530, 550, and 760 nm. The latter corresponds to indirect transition in investigated material.


2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
M. Acosta ◽  
I. Riech ◽  
E. Martín-Tovar

Zinc oxide (ZnO) thin films were grown by nonreactive RF sputtering at room temperature under varying argon pressures (PAr). Their optical band gap was found to increase from 3.58 to 4.34 eV when the argon pressure increases from 2.67 to 10.66 Pa. After annealing at 200°C and 500°C, optical band gaps decrease considerably. The observed widening of the band gap with increasingPArcan be understood as being a consequence of the poorer crystallinity of films grown at higher pressures. Measurements of morphological and electrical properties of these films correlate well with this picture. Our main aim is to understand the effects ofPAron several physical properties of the films, and most importantly on its optical band gap.


2008 ◽  
Vol 516 (7) ◽  
pp. 1359-1364 ◽  
Author(s):  
E. Elangovan ◽  
A. Marques ◽  
A.S. Viana ◽  
R. Martins ◽  
E. Fortunato

2019 ◽  
Vol 37 (1) ◽  
pp. 25-32
Author(s):  
A.K. Sharma ◽  
S.S. Potdar ◽  
M.A. Yewale ◽  
Deepak B. Shirgaonkar ◽  
K.S. Pakhare ◽  
...  

AbstractCadmium oxide (CdO) thin films were synthesized using chemical bath deposition (CBD) method from aqueous cadmium nitrate solution. The bath temperatures were maintained at room temperature (25 °C) and at higher temperature (80 °C). The structural studies revealed that the films showed mixed phases of CdO and Cd(OH)2 with hexagonal/monoclinic crystal structure. Annealing treatment removed the hydroxide phase and the films converted into pure CdO with cubic, face centered crystal structure. SEM micrographs of as-deposited films revealed nanowire-like morphology for room temperature deposited films while nanorod-like morphology for high temperature deposited films. However, cube-like morphology was observed after air annealing. Elemental composition was confirmed by EDAX analysis. Band gap energies of the as-deposited films varied over the range of 3 eV to 3.5 eV, whereas the annealed films showed band gap energy variation in the range of 2.2 eV to 2.4 eV. The annealed films were successfully investigated for NH3 sensing at different operating temperatures and at different gas concentrations. The room temperature synthesized film showed a response of 17.3 %, whereas high temperature synthesized film showed a response of 13.5 % at 623 K upon exposure to 24 ppm of NH3.


2008 ◽  
Vol 2 ◽  
pp. 69-76 ◽  
Author(s):  
E. Ahmed ◽  
Waqar Ahmed

In this paper the effects of post-deposition annealing followed by hydrogen ionimplantation on the properties of CuIn0.75Ga0.25Se2 thin films have been investigated. The samples were grown by flash evaporation onto glass substrates heated at temperature between room temperature and 200°C. Selected samples were subsequently processed under several sets of conditions, including vacuum, selenium, inert (argon) and forming gas (a 9:1 mixture of N2:H2) followed by hydrogen ion-implantation. A high resolution near-infrared photoacoustic spectrometer of the gas-microphone type was used for room temperature analysis of non-radiative defect levels in the as-grown, annealed and hydrogen implanted thin films. The absorption coefficient has been derived from the PA spectra to determine the gap energy and to establish the activation energies for several defect-related energy levels. The changes observed in the PA spectra following annealing and ionimplantation has been directly correlated with the compositional and structural properties of the samples.


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