scholarly journals A low noise cascaded amplifier for the ultra-wide band receiver in the biosensor

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Maissa Daoud ◽  
Mohamed Ghorbel ◽  
Hassene Mnif
Keyword(s):  
Power Supply ◽  
Biomedical Applications ◽  
Figure Of Merit ◽  
Noise Figure ◽  
Wide Band ◽  
Low Noise ◽  
Ultra Wide Band ◽  
Low Power Consumption ◽  
5 Ghz ◽  
Minimum Noise

AbstractThis paper presents the design of an Ultra-Wide Band (UWB) Low Noise cascaded Amplifier (LNA) used for biomedical applications. The designed structure uses a technique which is based on the inductances minimization to reduce the LNA surface while maintaining low power consumption, low noise and high stability, linearity and gain. To prove its robustness, this technique was studied theoretically, optimized and validated through simulation using the CMOS 0.18 µm process. The LNA achieves a maximum band voltage gain of about 17.5 dB at [1-5] GHz frequency band, a minimum noise figure of 2 dB, IIP3 of + 1dBm and consumes only 13mW under a 2 V power supply. It is distinguished by its prominent figure of merit of 0.68.

scholarly journals A 0.18um CMOS Low Noise Amplifier for 3-5ghz UWB Receivers

2018 ◽  
Vol 7 (3.6) ◽  
pp. 84
Author(s):  
N Malika Begum ◽  
W Yasmeen
Keyword(s):  
Power Supply ◽  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Wideband ◽  
Noise Amplifier ◽  
5 Ghz ◽  
Chebyshev Filter ◽  
Minimum Noise

This paper presents an Ultra-Wideband (UWB) 3-5 GHz Low Noise Amplifier (LNA) employing Chebyshev filter. The LNA has been designed using Cadence 0.18um CMOS technology. Proposed LNA achieves a minimum noise figure of 2.2dB, power gain of 9dB.The power consumption is 6.3mW from 1.8V power supply.  

A 0.9V CMOS 3-5 Ghz broadband flat gain low-noise amplifier for ultra-wide band receivers

2013 ◽  
Vol 36 (2) ◽  
pp. 87-91 ◽  
Author(s):  
H. Alavi-Rad ◽  
S. Ziabakhsh ◽  
S. Ziabakhsh ◽  
M. C. E. Yagoub
Keyword(s):  
Wide Band ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Wide Band ◽  
Flat Gain ◽  
Noise Amplifier ◽  
5 Ghz

scholarly journals Design of Low Noise Amplifier for WLAN using pHEMT

2020 ◽  
Vol 9 (2) ◽  
pp. 272
Author(s):  
G. Thirunavukkarasu ◽  
G. Murugesan
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Low Power Consumption ◽  
Systematic Design ◽  
Noise Performance ◽  
Design And Manufacturing ◽  
Noise Amplifier ◽  
Minimum Noise ◽  
Minimum Noise Figure

The low power consumption devices are frequently focused in design and manufacturing wireless communication system. This paper gives a systematic design of a low noise amplifier for WLAN application aimed to obtain minimum noise figure. The simulation result shows that the noise figure is in the appreciable level (1.67 dB). The maximum gain is greater than 10 dB. These are the predominant requirements of an LNA. Also it posses good stability and the LNA design uses pHEMT for its appreciable noise performance.  

A 1.2 V CMOS COMMON-GATE LOW NOISE AMPLIFIER FOR UWB WIRELESS COMMUNICATIONS

2013 ◽  
Vol 22 (07) ◽  
pp. 1350052 ◽  
Author(s):  
HOSEIN ALAVI-RAD ◽  
SOHEYL ZIABAKHSH ◽  
MUSTAPHA C. E. YAGOUB
Keyword(s):  
Reflection Coefficient ◽  
Noise Figure ◽  
Supply Voltage ◽  
Wide Band ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Wide Band ◽  
Band Frequency ◽  
Common Gate ◽  
Noise Amplifier

In this paper, an ultra-wide band 0.18 μm CMOS common-gate low-noise amplifier (LNA) is presented. Designed in the ultra-wide band frequency range of 3.1–10.6 GHz, it uses a current-reused technique with modified input matching. This approach allowed obtaining a flat broadband gain of 12.75 ± 0.83 dB with an input reflection coefficient less than -5.5 dB, an output reflection coefficient less than -7 dB, and a noise figure less than 3.7 dB. Furthermore, the proposed low-power LNA consumes only 12.14 mW (excluding buffer) from a 1.2 V supply voltage.

scholarly journals A single power supply 0.1-3.5 GHz low noise amplifier design using a low cost 0.5 μm d-mode pHEMT process

2020 ◽  
Vol 33 (2) ◽  
pp. 317-326
Author(s):  
Denis Sotskov ◽  
Vadim Elesin ◽  
Alexander Kuznetsov ◽  
Nikolay Usachev ◽  
Nikita Zhidkov ◽  
...  
Keyword(s):  
Power Supply ◽  
Noise Figure ◽  
Low Cost ◽  
Wide Band ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Operating Frequency Range ◽  
Amplifier Design ◽  
Noise Amplifier ◽  
Single Power

Design and testing results of a single power supply wide-band low noise amplifier (LNA) based on low cost 0.5 ?m D-mode pHEMT process are presented. It is shown that the designed cascode LNA has operating frequency range up to 3.5 GHz, power gain above 15 dB, noise figure below 2.2 dB, output linearity above 17 dBm and power consumption less than 325 mW. Potential immunity of the LNA to total ionizing dose and destructive single event effects exceed 300 krad and 60 MeV?cm2/mg respectively.

scholarly journals Robust GaN Electronics for Highly Reliable BF and RF Analog Systems in Aerospace Applications

2006 ◽  
Author(s):  
G. Soubercaze-Pun ◽  
J. G. Tartarin ◽  
L. Bary ◽  
J. Rayssac ◽  
S. Delage ◽  
...  
Keyword(s):  
Noise Figure ◽  
Wide Band ◽  
Low Noise ◽  
Full Duplex ◽  
Radio Link ◽  
Natural Immunity ◽  
Aerospace Applications ◽  
Analog Systems ◽  
Reliability And Robustness ◽  
5 Ghz

The reliability and robustness of electronic sub-systems dedicated to control and communications in the aerospace sector is more than ever one of the key points for safety and security, essentially during landing operations. As aircraft manufacturers have to diversify their mean of communication system’s control (Full-Duplex and System), the reliability can be improved both by setting redundant remote networks, and also by using matched technologies for increased performances and robustness: the wide band-gap Gallium Nitride technology (GaN) newly developed fits perfectly to the requirements of systems such as Microwave Landing System (MLS) or Distance Measuring Equipments (DME) used during the final landing approach. Actually, GaN technology takes advantage of a natural immunity to electromagnetic perturbations, and is suitable for circuit design in the RF frequency band (up to 5 GHz for aircraft applications). The GaN based circuits are able to improve transceiver’s efficiency (and so the radio-link budget) thanks to their low noise figure (receiver) and high output power (transmitter), reducing digital bit error rate during the code demodulation. This point is crucial while electronic runs in an urban environment. Moreover, the next electronic systems developed for “composite aircraft” will be more exposed to high electric field and CEM problems in circuits. Furthermore, this GaN integrated technology allows a reduction of volume for transmitter’s sub-systems, and is easy to setup (aircraft maintenance): the risk of immobilisation during the aircraft exploitation will be reduced and his maintainability will be easier. Finally, this technology is also perfectly suited for ground navigation control systems such as radar. This work presents the challenge for civil and military future avionic systems by making use of GaN based technologies.

scholarly journals Ultra-Wide Band LNA Design using Active Inductor with Modified Noise Cancellation Technique

2019 ◽  
Vol 8 (2) ◽  
pp. 2406-2410
Keyword(s):  
Noise Figure ◽  
Supply Voltage ◽  
Wide Band ◽  
Low Noise ◽  
Ultra Wide Band ◽  
Active Inductor ◽  
Cmos Process ◽  
Chip Area ◽  
Chip Size ◽  
Lna Design

An Ultra-Wide Band (UWB) Low Noise Amplifier (LNA) is affective in deciding the chip size and in the implementation cost at Radio Frequency applications. The proposed LNA design with an active inductor is a different solution to trounce the habit of passive inductors to cut the chip area. Designed in 90-nm CMOS process, a voltage gain of 9dB to 15.5dB for a supply voltage of 0.9v to 1.8V with a smallest Noise Figure (NF) of 5.7dB is achieved by the LNA, with low power utilization and at 2.40 GHz, with 345um2 of chip area.

Design of 3.1-10.6GHz CMOS LNA Based on Input Matching Technique of Common-Gate Topology

2013 ◽  
Vol 479-480 ◽  
pp. 1014-1017
Author(s):  
Yi Cheng Chang ◽  
Meng Ting Hsu ◽  
Yu Chang Hsieh
Keyword(s):  
Noise Figure ◽  
Supply Voltage ◽  
Average Power ◽  
Wide Band ◽  
Low Noise ◽  
Input Matching ◽  
Common Gate ◽  
Cmos Lna ◽  
Noise Amplifier ◽  
Is Design

In this study, three stage ultra-wide-band CMOS low-noise amplifier (LNA) is presented. The UWB LNA is design in 0.18μm TSMC CMOS technique. The LNA input and output return loss are both less than-10dB, and achieved 10dB of average power gain, the minimum noise figure is 6.55dB, IIP3 is about-9.5dBm. It consumes 11mW from a 1.0-V supply voltage.

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