Selective n-type doping in graphene via the aluminium nanoparticle decoration approach

2014 ◽  
Vol 2 (27) ◽  
pp. 5417-5421 ◽  
Author(s):  
Xiaoling Shi ◽  
Guofa Dong ◽  
Ming Fang ◽  
Fengyun Wang ◽  
Hao Lin ◽  
...  
Keyword(s):  
Dirac Point ◽  
Effective Technique ◽  
Current Ratio ◽  
Al Nanoparticles ◽  
Left Shift ◽  
Graphene Devices

A simple and effective technique is presented to left shift the Dirac point of graphene transistors to induce n-type doping via the thermal decoration of Al nanoparticles. The versatility of this approach is illustrated by the fabrication of air-stable n-type doping in graphene devices with the improved on/off current ratio.

Reply to: Dirac-point photocurrents due to photothermoelectric effect in non-uniform graphene devices

2020 ◽  
Vol 15 (4) ◽  
pp. 244-246
Author(s):  
Qiong Ma ◽  
Justin C. W. Song ◽  
Nathaniel M. Gabor ◽  
Pablo Jarillo-Herrero
Keyword(s):  
Dirac Point ◽  
Graphene Devices

scholarly journals Positioning of the Fermi Level in Graphene Devices with Asymmetric Metal Electrodes

2010 ◽  
Vol 2010 ◽  
pp. 1-5 ◽  
Author(s):  
Bum-Kyu Kim ◽  
Eun-Kyoung Jeon ◽  
Ju-Jin Kim ◽  
Jeong-O Lee
Keyword(s):  
Fermi Level ◽  
Dirac Point ◽  
Metal Electrode ◽  
Peak Position ◽  
Metal Contacts ◽  
Metal Electrodes ◽  
Hole Band ◽  
Graphene Devices ◽  
Hybrid Devices ◽  
Bias Range

To elucidate the effect of the work function on the position of the Dirac point, we fabricated graphene devices with asymmetric metal contacts. By measuring the peak position of the resistance for each pair of metal electrodes, we obtained the voltage of the Dirac pointVgDirac(V) from the gate response. We found that the position ofVgDirac(V) in the hybrid devices was significantly influenced by the type of metal electrode. The measured shifts inVgDirac(V) were closely related to the modified work functions of the metal-graphene complexes. Within a certain bias range, the Fermi level of one of the contacts aligned with the electron band and that of the other contact aligned with the hole band.

scholarly journals Ultra-low contact resistance in graphene devices at the Dirac point

2D Materials ◽  
2018 ◽  
Vol 5 (2) ◽  
pp. 025014 ◽  
Author(s):  
Luca Anzi ◽  
Aida Mansouri ◽  
Paolo Pedrinazzi ◽  
Erica Guerriero ◽  
Marco Fiocco ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Dirac Point ◽  
Graphene Devices

Chemistry at the Dirac Point of Graphene: Diels-Alder Approach to Reversible Band Gap Engineering and High Mobility Graphene Devices

2014 ◽  
Vol 1658 ◽  
Author(s):  
Santanu Sarkar
Keyword(s):  
Band Gap ◽  
Dirac Point ◽  
High Mobility ◽  
Single Layer ◽  
Diels Alder ◽  
Single Layer Graphene ◽  
Dual Nature ◽  
Band Gap Engineering ◽  
Graphene Devices ◽  
Graphene Fet

ABSTRACTThe Diels-Alder (DA) pericyclic chemistry is one of the most powerful reactions in synthetic chemistry. We have recently shown that the unique zero-band-gap electronic structure of graphene at the Dirac point facilitates the band-gap-dependent DA reaction of graphene, although graphene is the thermochemical reference for carbon. We have shown that in the DA reactions, graphene can function either as a diene or a dienophile (dual nature). Such DA functionalization of graphene when applied to graphene-FET devices allows balanced functionalization (creation of a pair of new sp3 centers or divacancies) at both A and B graphene sublattices, allowing the fabrication of high mobility DA-functionalized single-layer graphene devices (DA-SLG) with acceptable on/off ratio. The chemistry is thermally reversible via retro-DA chemistry, thus allowing reversible engineering of graphene devices.

scholarly journals Dirac-point photocurrents due to the photothermoelectric effect in non-uniform graphene devices

2020 ◽  
Vol 15 (4) ◽  
pp. 241-243 ◽  
Author(s):  
Michael S. Fuhrer ◽  
Nikhil V. Medhekar
Keyword(s):  
Dirac Point ◽  
Graphene Devices

scholarly journals Numerical investigation of the effect of substrate surface roughness on the performance of zigzag graphene nanoribbon field effect transistors symmetrically doped with BN

2014 ◽  
Vol 5 ◽  
pp. 1569-1574 ◽  
Author(s):  
Majid Sanaeepur ◽  
Arash Yazdanpanah Goharrizi ◽  
Mohammad Javad Sharifi
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Substrate Surface ◽  
Tight Binding ◽  
Substrate Material ◽  
Graphene Nanoribbon ◽  
Substrate Roughness ◽  
Current Ratio ◽  
Substrate Surface Roughness ◽  
Graphene Devices

The performance of field effect transistors comprised of a zigzag graphene nanoribbon that is symmetrically doped with boron nitride (BN) as a channel material, is numerically studied for the first time. The device merit for digital applications is investigated in terms of the on-, the off- and the on/off-current ratio. Due to the strong effect of the substrate roughness on the performance of graphene devices, three common substrate materials (SiO2, BN and mica) are examined. Rough surfaces are generated by means of a Gaussian auto-correlation function. Electronic transport simulations are performed in the framework of tight-binding Hamiltonian and non-equilibrium Green's function (NEGF) formalisms. The results show that with an appropriate selection of the substrate material, the proposed devices can meet the on/off-current ratio required for future digital electronics.

scholarly journals Global strain-induced scalar potential in graphene devices

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Lujun Wang ◽  
Andreas Baumgartner ◽  
Péter Makk ◽  
Simon Zihlmann ◽  
Blesson Sam Varghese ◽  
...  
Keyword(s):  
Dirac Point ◽  
Direct Evidence ◽  
Electronic Device ◽  
Scalar Potential ◽  
Energy Shift ◽  
Global Strain ◽  
Optical And Electronic Properties ◽  
Similar Materials ◽  
Graphene Devices ◽  
External Strain

AbstractBy mechanically distorting a crystal lattice it is possible to engineer the electronic and optical properties of a material. In graphene, one of the major effects of such a distortion is an energy shift of the Dirac point, often described as a scalar potential. We demonstrate how such a scalar potential can be generated systematically over an entire electronic device and how the resulting changes in the graphene work function can be detected in transport experiments. Combined with Raman spectroscopy, we obtain a characteristic scalar potential consistent with recent theoretical estimates. This direct evidence for a scalar potential on a macroscopic scale due to deterministically generated strain in graphene paves the way for engineering the optical and electronic properties of graphene and similar materials by using external strain.

951: “Experience in the Treatment of Low Flow Priapism”; A Novel, Easy and Effective Technique: A Long-Term, Binational, Multi-Institutional Study in 18 Patients Over 8 Years

2007 ◽  
Vol 177 (4S) ◽  
pp. 314-315
Author(s):  
Jose A. Medina Machuca ◽  
Jose A. Medina Coello ◽  
Hugo Manzanilla ◽  
Francisco A. Gutierrez
Keyword(s):  
Low Flow ◽  
Effective Technique

ANALISIS EFISIENSI PENGELOLAAN MODAL KERJA PADA PERUSAHAAN DAERAH AIR MINUM (PDAM) KABUPATEN BANGGAI

2017 ◽  
Vol 1 (2) ◽  
pp. 21
Author(s):  
IRWAN MORIDU
Keyword(s):  
Profit Margin ◽  
Current Ratio ◽  
Return On Equity

Penelitian ini bertujuan untuk mengetahui apakah penggunaan modal kerja pada Perusahaan Daerah Air Minum Kabupaten Banggai sudah efisien selama tahun 2013 hingga 2016, data dianalisis secara deskriptif kuantitatif dengan menggunakan rasio aktivitas. Penelitian ini dilaksankan pada pada Perusahaan Daerah Air Minum Kabupaten Banggai dari bulan juni hingga agustus 2017 dengan menggunakan metode wawancara, observasi dan dokumentasi.Berdasarkan hasil penelitian dari hasil perhitungan Rasio Likuiditas yang terdiri dari Current Ratio, Quick Ratio dan Cash Ratio dan Rasio Rentabilitas yang terdiri dari Gross Profit Margin, Profit Margin, Return On Asset, dan Return On Equity, secara keseluruhan perhitungan rasio dalam pengukuran efisiensi penggunaan modal kerja pada Perusahaan Daerah Air Minum Kabupaten Banggai selama kurun waktu 2013 sampai dengan tahun 2016 adalah kurang efisien.

The Effect of Current Ratio and Debt to Asset Ratio on Net Profit Margin and Stock Prices: A Study of Basic Industry and Chemicals Companies

2020 ◽  
pp. 282-294
Author(s):  
Sudirman S ◽  
Muhammad Wahyuddin Abdullah ◽  
Muhammad Obie
Keyword(s):  
Stock Prices ◽  
Stock Exchange ◽  
Secondary Data ◽  
Profit Margin ◽  
Current Ratio ◽  
Industry Sector ◽  
Basic Industry ◽  
Net Profit ◽  
Equity Ratio ◽  
Index Value

This study examined the effect of current ratio and debt to asset ratio on net profit margin and stock prices of the sector basic industry and chemicals companies listed on the Indonesia Stock Exchange in the period 2015-2019. The object of research was the stock prices of companies in the Basic Industry and Chemicals sector, which have been published through the official website of the Indonesian capital market. It was used secondary data derived from the monthly statistics, including Current Ratio data, Net Profit Margin, Debt to Asset Ratio, and data on closing prices for the period 2015-2019. In analyzing data, it was used path analysis of secondary data obtained from the basic industry sector financial statements of 60 companies. The company's performance in this sector is considered quite good when seen from the movement of the index value in the last five years. The results show that direct current ratio had a positive and significant effect on the net profit margin, and the debt to equity ratio did not significantly influence the net profit margin. The current ratio has a positive and significant effect on stock prices, and the debt to equity ratio has a negative and not significant effect on stock prices. In contrast, the net profit margin has a significant effect on stock prices in the basic industry sector companies on the Indonesia Stock Exchange. Indirectly the current ratio has a positive and significant effect on stock prices. In contrast, the debt to asset ratio has a negative and not significant effect on the company's stock prices in the basic industry sector on the Indonesia Stock Exchange.

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