Surface grafting of octylamine onto poly(ethylene-alt-maleic anhydride) gate insulators for low-voltage DNTT thin-film transistors

2016 ◽  
Vol 18 (12) ◽  
pp. 8522-8528 ◽  
Author(s):  
Yun-Seo Choe ◽  
Mi Hye Yi ◽  
Ji-Heung Kim ◽  
Yun Ho Kim ◽  
Kwang-Suk Jang
Keyword(s):  
Thin Film ◽  
Maleic Anhydride ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Gate Insulator ◽  
Surface Grafting ◽  
Gate Insulators ◽  
Poly Ethylene

We report the surface grafting of octylamine onto a poly(ethylene-alt-maleic anhydride) (PEMA) gate insulator for enhancing the performance of dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) thin-film transistors.

Low-voltage organic thin-film transistors with hydrophobic hafnium oxynitride film as gate insulator

2010 ◽  
Vol 11 (1) ◽  
pp. 123-126 ◽  
Author(s):  
Li-Shiuan Tsai ◽  
Chung-Hwa Wang ◽  
Wei-Yu Chen ◽  
Wen-Chieh Wang ◽  
Jennchang Hwang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Gate Insulator ◽  
Organic Thin Film ◽  
Oxynitride Film ◽  
Hafnium Oxynitride

Polyimide/polyvinyl alcohol bilayer gate insulator for low-voltage organic thin-film transistors

2015 ◽  
Vol 23 ◽  
pp. 213-218 ◽  
Author(s):  
Sungmi Yoo ◽  
Yun Ho Kim ◽  
Jae-Won Ka ◽  
Yong Seok Kim ◽  
Mi Hye Yi ◽  
...  
Keyword(s):  
Thin Film ◽  
Polyvinyl Alcohol ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Gate Insulator ◽  
Organic Thin Film

Effect of Gd3+ Doping on Sol–Gel Prepared Y2O3 Films as Gate Insulators for Oxide Thin Film Transistors

2021 ◽  
Vol 21 (9) ◽  
pp. 4694-4699
Author(s):  
Byung-Yoon Park ◽  
Sungho Choi ◽  
Taek Ahn
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Operating Voltage ◽  
Robust Solution ◽  
Gate Insulators ◽  
Low Leakage ◽  
Low Leakage Current

The relationships between the microstructure and the dielectric properties of sol–gel prepared Y2O3 films with various Gd3+ doping were systematically investigated. Robust solution processed lanthanide films, (Y1−xGdx)2O3 (0 < x ≤ 0.5), are demonstrated as high-k gate insulators for low voltage-driven oxide thin film transistors and their optimized composition is presented. With the proper amount of Gd3+ doping, the corresponding thin film insulators exhibit low leakage current with increased dielectric constant. The resultant Zn–Sn–O/(Y, Gd)2O3 TFT exhibits enhanced performance, by a factor of 10.7 compared with TFTs using a SiO2 insulator, with a field-effect mobility of ~3.15 cm2V−1s−1 and an exceptionally low operating voltage <15 V.

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