Effect of Zn substitution at a Cu site on the transport behavior and thermoelectric properties in Cu3SbSe4

RSC Advances ◽  
2016 ◽  
Vol 6 (7) ◽  
pp. 5528-5534 ◽  
Author(s):  
Aparabal Kumar ◽  
P. Dhama ◽  
Deepash S. Saini ◽  
P. Banerji
Keyword(s):  
Thermal Conductivity ◽  
Beneficial Effect ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Transport Behavior ◽  
Zn Substitution

Zn substitution at Cu site in Cu3SbSe4 reduces the thermal conductivity giving beneficial effect to the thermoelectric figure of merit.

Influence of multi-sintering on the thermoelectric properties of Bi2Sr2Co2Oy ceramics

2019 ◽  
Vol 34 (02) ◽  
pp. 2050019 ◽  
Author(s):  
Y. Zhang ◽  
M. M. Fan ◽  
C. C. Ruan ◽  
Y. W. Zhang ◽  
X.-J. Li ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Phonon Scattering ◽  
Sintered Sample ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
The Third ◽  
Ceramic Samples ◽  
Optimum Formula

[Formula: see text] ceramic samples have a structure similar to phonon glass electronic crystals, and their thermoelectric properties can be effectively adjusted through repeated grinding and sintering. The results show that multi-sintering can make their grain refined and increase their grain boundary, which will effectively increase density and phonon scattering. Finally, multi-sintering can reduce the resistivity and thermal conductivity, thus obviously improve thermoelectric figure of merit [Formula: see text] of [Formula: see text]. The optimum [Formula: see text] value of 0.26 is achieved at 923 K by the third sintered sample.

Effects of Ce filling fraction and Fe content on the thermoelectric properties of Co-rich CeyFexCo4−xSb12

2001 ◽  
Vol 16 (3) ◽  
pp. 837-843 ◽  
Author(s):  
Xinfeng Tang ◽  
Lidong Chen ◽  
Takashi Goto ◽  
Toshio Hirai
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Single Phase ◽  
Lattice Thermal Conductivity ◽  
Hole Concentration ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Filling Fraction ◽  
Fe Content

Single-phase filled skutterudite compounds, CeyFexCo4−xSb12 (x = 0 to 3.0, y = 0 to 0.74), were synthesized by a melting method. The effects of Fe content and Ce filling fraction on the thermoelectric properties of CeyFexCo4−xSb12 were investigated. The lattice thermal conductivity of Ce-saturated CeyFexCo4−xSb12, y being at the maximum corresponding to x, decreased with increasing Fe content (x) and reached its minimum at about x = 1.5. When x was 1.5, lattice thermal conductivity decreased with increasing Ce filling fraction till y = 0.3 and then began to increase after reaching the minimum at y = 0.3. Hole concentration and electrical conductivity of Cey Fe1.5Co2.5Sb12 decreased with increasing Ce filling fraction. The Seebeck coefficient increased with increasing Ce filling fraction. The greatest dimensionless thermoelectric figure of merit T value of 1.1 was obtained at 750 K for the composition of Ce0.28Fe1.52Co2.48Sb12.

Thermoelectric Properties of CoSb3-based Skutterudite Compounds

2010 ◽  
Vol 1267 ◽  
Author(s):  
Adul Harnwunggmoung ◽  
Ken Kurosaki ◽  
Hiroaki Muta ◽  
Shinsuke Yamanaka
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Lattice Thermal Conductivity ◽  
Filling Ratio ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Alloy Scattering ◽  
Skutterudite Compound

AbstractCoSb3 is known as a skutterudite compound that could exhibit high thermoelectric figure of merit. However, the thermal conductivity of CoSb3 is relatively high. In order to enhance the thermoelectric performance of this compound, we tried to reduce the thermal conductivity of CoSb3 by substitution of Rh for Co and by Tl-filling into the voids. The polycrystalline samples of (Co,Rh)Sb3 and Tl-filled CoSb3 were prepared and the thermoelectric properties such as the Seebeck coefficient, electrical resistivity, and thermal conductivity were measured in the temperature range from room temperature to 750 K. The Rh substitution for Co reduced the lattice thermal conductivity, due to the alloy scattering effect. The minimum value of the lattice thermal conductivity was 4 Wm-1K-1 at 750 K obtained for (Co0.7Rh0.3)Sb3. Also the lattice thermal conductivity rapidly decreased with increasing the Tl-filling ratio. T10.25Co4Sb12 exhibited the best ZT values; the maximum ZT was 0.9 obtained at 600 K.

Thermoelectric Properties of a Wide–Gap Chalcopyrite Compound AgInSe2

2012 ◽  
Vol 519 ◽  
pp. 188-192 ◽  
Author(s):  
P.Z. Ying ◽  
H. Zhou ◽  
Y.L. Gao ◽  
Y.Y. Li ◽  
Y.P. Li ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Chemical Compositions ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Remarkable Improvement ◽  
Wide Gap ◽  
Chalcopyrite Compound

Here we report the thermoelectric properties of a wide–gap chalcopyrite compound AgInSe2, and observed the remarkable improvement in electrical conductivity σ, due to the bandgap (Eg = 1.12 eV) reduction compared to In2Se3. The improvement in σ is directly responsible for the enhancement of thermoelectric figure of merit ZT, though the thermal conductivity is much higher at 500 ~ 724 K. The maximum ZT value is 0.34 at 724 K, increasing by a factor of 4, indicating that this chalcopyrite compound is of a potential thermoelectric candidate if further optimizations of chemical compositions and structure are made.

scholarly journals The impact of charge transfer and structural disorder on the thermoelectric properties of cobalt intercalated TiS2

2016 ◽  
Vol 4 (9) ◽  
pp. 1871-1880 ◽  
Author(s):  
Gabin Guélou ◽  
Paz Vaqueiro ◽  
Jesús Prado-Gonjal ◽  
Tristan Barbier ◽  
Sylvie Hébert ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Charge Transfer ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Structural Disorder ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Low Levels ◽  
The Impact

The thermoelectric figure of merit of TiS2 is increased by 25% through the intercalation of low levels of cobalt due to an increased electrical conductivity, arising from charge transfer, and a reduced thermal conductivity resulting from disorder.

OPTIMIZATION OF THERMOELECTRIC PROPERTIES BY Cu SUBSTITUTION IN LaCoO3 CERAMICS

2014 ◽  
Vol 28 (09) ◽  
pp. 1450065 ◽  
Author(s):  
K. K. CHOUDHARY ◽  
N. KAURAV ◽  
S. K. GHOSH
Keyword(s):  
Thermal Conductivity ◽  
Grain Boundaries ◽  
Thermoelectric Power ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Linear Temperature Dependence ◽  
Thermoelectric Figure ◽  
Linear Temperature ◽  
Cu Substitution

The thermoelectric properties of LaCo 1-x Cu x O 3-δ ceramics are theoretically analyzed, it is observed that thermoelectric figure of merit ZT ( = S2σT/κ) is maximized by Cu substitution in LaCo 1-x Cu x O 3-δ at x = 0.15. The lattice thermal conductivity (κ ph ) and phonon drag thermoelectric power [Formula: see text] were estimated by the scattering of phonons with defects, grain boundaries, electrons and phonon umklapp scattering to evaluate the thermoelectric figure of merit ZT. The Mott expression is used to estimate the electron diffusive thermoelectric power [Formula: see text] using Fermi energy as electron free parameter, [Formula: see text] shows linear temperature dependence. The electron contribution to thermal conductivity (κe) is estimated using temperature-dependent electron relaxation time. We found that Cu substitution increases the phonon scattering with grain boundaries and defects which significantly decrease the thermal conductivity and subsequently increase the thermoelectric power. The present numerical analysis of thermoelectric properties will help in designing more efficient thermoelectric materials for thermoelectric applications.

Thermoelectric properties of Li-doped Cu0.95-xM0.05LixO (M=Mn, Ni, Zn)

2012 ◽  
Vol 1490 ◽  
pp. 69-73
Author(s):  
N. Yoshida ◽  
T. Naito ◽  
H. Fujishiro
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Thermoelectric Properties ◽  
Metal Ion ◽  
Figure Of Merit ◽  
Divalent Metal ◽  
Thermoelectric Figure Of Merit ◽  
Divalent Metal Ions ◽  
Thermoelectric Figure ◽  
Divalent Metal Ion

ABSTRACTThermoelectric properties of the Li-doped Cu0.95-xM0.05LixO (M=divalent metal ion; Mn, Ni, Zn) were investigated at the temperature up to 1273 K. In the doped divalent metal ions, Zn2+ ion was the most effective to reduce the thermal conductivity, and the Ni2+ substitution was preferable to decrease the electrical resistivity. For the Cu0.95-xNi0.05LixO sample at x=0.03, the maxima of the dimensionless thermoelectric figure of merit ZT and the power factor P at 1246 K were 4.2×10-2 and 1.6 ×10-4 W/K2m, respectively. The enhancement of the thermoelectric properties of the Li-doped Cu0.95-xM0.05LixO system was discussed.

scholarly journals Is LiI a Potential Dopant Candidate to Enhance the Thermoelectric Performance in Sb-Free GeTe Systems? A Prelusive Study

Energies ◽  
2020 ◽  
Vol 13 (3) ◽  
pp. 643 ◽  
Author(s):  
Bhuvanesh Srinivasan ◽  
David Berthebaud ◽  
Takao Mori
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
Short Communication ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Plasma Sintering ◽  
Spark Plasma

As a workable substitute for toxic PbTe-based thermoelectrics, GeTe-based materials are emanating as reliable alternatives. To assess the suitability of LiI as a dopant in thermoelectric GeTe, a prelusive study of thermoelectric properties of GeTe1−xLiIx (x = 0–0.02) alloys processed by Spark Plasma Sintering (SPS) are presented in this short communication. A maximum thermoelectric figure of merit, zT ~ 1.2, was attained at 773 K for 2 mol% LiI-doped GeTe composition, thanks to the combined benefits of a noted reduction in the thermal conductivity and a marginally improved power factor. The scattering of heat carrying phonons due to the presumable formation of Li-induced “pseudo-vacancies” and nano-precipitates contributed to the conspicuous suppression of lattice thermal conductivity, and consequently boosted the zT of the Sb-free (GeTe)0.98(LiI)0.02 sample when compared to that of pristine GeTe and Sb-rich (GeTe)x(LiSbTe2)2 compounds that were reported earlier.

scholarly journals First-principles prediction of structural stability and thermoelectric properties of SrGaSnH

RSC Advances ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 3304-3314
Author(s):  
Enamul Haque ◽  
Mizanur Rahaman
Keyword(s):  
Thermal Conductivity ◽  
Structural Stability ◽  
Thermoelectric Properties ◽  
First Principles ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure

Weak anharmonicity: the weak anharmonicity leads to weak phonon scattering in SrGaSnH. Thus, SrGaSnH intrinsically possesses a high lattice thermal conductivity (kl).. Such large κl dramatically reduces the thermoelectric figure of merit.

scholarly journals Effects of Ge Doping on the Charge Transport and Thermoelectric Properties of Permingeatites Cu3Sb1−yGeySe4

2021 ◽  
Vol 59 (6) ◽  
pp. 422-429
Author(s):  
Ji-Hee Pi ◽  
Go-Eun Lee, ◽  
Il-Ho Kim
Keyword(s):  
Thermal Conductivity ◽  
Charge Transport ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Lorenz Number ◽  
Degenerate Semiconductor ◽  
Thermoelectric Figure ◽  
Ge Doping

Permingeatites Cu3Sb1−yGeySe4 (0 ≤ y ≤ 0.14) were synthesized by mechanical alloying and hot pressing. The charge-transport parameters (Hall coefficient, carrier concentration, mobility, and Lorenz number) and thermoelectric properties (electrical conductivity, Seebeck coefficient, power factor, thermal conductivity, and figure of merit) were examined with respect to the Ge doping level. A single permingeatite phase with a tetragonal structure was obtained without subsequent heat treatment, but a small amount of the secondary phase Cu2GeSe3 was found for the specimens with y ≥ 0.08. All hot-pressed compacts exhibited a relative density of 97.5%–98.3%. The lattice constants of the a-axis and c-axis were decreased by the substitution of Ge at the Sb sites. As the Ge content increased, the carrier concentration increased from 5.2 × 1018 to 1.1 × 1020 cm−3, but the mobility decreased from 92 to 25 cm2·V−1·s−1. The Lorenz number of the undoped Cu3SbSe4 implied a non-degenerate semiconductor behavior, ranging from (1.57–1.56) × 10−8 V2·K−2 at 323–623 K. The thermoelectric figure of merit was 0.39 at 623 K, resulting from a power factor of 0.49 mW·m−1·K−2 and a thermal conductivity of 0.76 W·m−1·K−1. However, the Lorenz numbers of the Gedoped specimens indicated degenerate semiconductor characteristics, increasing to (1.63–1.94) × 10−8 V2·K−2 at 323–623 K. The highest thermoelectric figure of merit of 0.65 was at 623 K for Cu3Sb0.86Ge0.14Se4, resulting from the significantly improved power factor of 0.93 mW·m−1·K−2 and the thermal conductivity of 0.89W·m−1·K−1. As a result, the thermoelectric properties were remarkably enhanced by doping Ge into the Sb sites of the permingeatite.

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