Low-voltage electro-optical memory device based on NiO nanorods dispersed in a ferroelectric liquid crystal

RSC Advances ◽  
2016 ◽  
Vol 6 (59) ◽  
pp. 53873-53881 ◽  
Author(s):  
Achu Chandran ◽  
Jai Prakash ◽  
Jitendra Gangwar ◽  
Tilak Joshi ◽  
Avanish Kumar Srivastava ◽  
...  

A low-power nonvolatile memory device is fabricated by dispersing nickel oxide nanorods (nNiO) into a ferroelectric liquid crystal (FLC) host. The dipolar nNiO adsorbed ions in the FLC and thereby reduced the screening effect, which resulted in the enhanced memory behavior.

APL Materials ◽  
2017 ◽  
Vol 5 (4) ◽  
pp. 046105 ◽  
Author(s):  
Issei Sugiyama ◽  
Ryota Shimizu ◽  
Tohru Suzuki ◽  
Kuniko Yamamoto ◽  
Hideyuki Kawasoko ◽  
...  

ACS Nano ◽  
2016 ◽  
Vol 10 (8) ◽  
pp. 7598-7603 ◽  
Author(s):  
Yongsung Ji ◽  
Yang Yang ◽  
Seoung-Ki Lee ◽  
Gedeng Ruan ◽  
Tae-Wook Kim ◽  
...  

2008 ◽  
Vol 29 (3) ◽  
pp. 265-268 ◽  
Author(s):  
Ping-Hung Tsai ◽  
Kuei-Shu Chang-Liao ◽  
Chu-Yung Liu ◽  
Tien-Ko Wang ◽  
P. J. Tzeng ◽  
...  

2008 ◽  
Vol 93 (11) ◽  
pp. 112904 ◽  
Author(s):  
J. Prakash ◽  
A. Choudhary ◽  
A. Kumar ◽  
D. S. Mehta ◽  
A. M. Biradar

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