Low-voltage electro-optical memory device based on NiO nanorods dispersed in a ferroelectric liquid crystal
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A low-power nonvolatile memory device is fabricated by dispersing nickel oxide nanorods (nNiO) into a ferroelectric liquid crystal (FLC) host. The dipolar nNiO adsorbed ions in the FLC and thereby reduced the screening effect, which resulted in the enhanced memory behavior.
1979 ◽
Vol 26
(6)
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pp. 914-918
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2008 ◽
Vol 29
(3)
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pp. 265-268
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