Multiferroic Bi2FeCrO6 based p–i–n heterojunction photovoltaic devices

2017 ◽  
Vol 5 (21) ◽  
pp. 10355-10364 ◽  
Author(s):  
Wei Huang ◽  
Catalin Harnagea ◽  
Daniele Benetti ◽  
Mohamed Chaker ◽  
Federico Rosei ◽  
...  
Keyword(s):  
Photovoltaic Devices ◽  
Heterojunction Devices ◽  
P Type

The p–i–n heterojunction devices based on intrinsic absorber multiferroic Bi2FeCrO6 sandwiched between p-type NiO and n-type Nb-doped SrTiO3 were demonstrated.

Star-shaped heptamers of discotic dyes as new materials for photovoltaic devices

2004 ◽  
Vol 836 ◽  
Author(s):  
S. Holger Eichhorn ◽  
Nicholas Fox ◽  
Bryan Bornais
Keyword(s):  
Liquid Crystal ◽  
Electronic Properties ◽  
Photovoltaic Devices ◽  
New Materials ◽  
Discotic Liquid Crystal ◽  
P Type ◽  
Potential Use

AbstractPotentially n-type and p-type semi-conducting discotic liquid crystal dyes are linked together to star-shaped heptamers, which might self-organize into super-columns of separated p-type and n-type columnar stacks. Their synthesis, mesomorphism, and electronic properties will be discussed along with their potential use in photovoltaic devices.

Assembling p-type molecules on single wall carbon nanotubes for photovoltaic devices

2009 ◽  
pp. 3705 ◽  
Author(s):  
Jennifer E. Klare ◽  
Ian P. Murray ◽  
Joshua Goldberger ◽  
Samuel I. Stupp
Keyword(s):  
Carbon Nanotubes ◽  
Single Wall Carbon Nanotubes ◽  
Photovoltaic Devices ◽  
Single Wall Carbon ◽  
P Type

Defects and Doping in Nanocrystalline Silicon-Germanium Devices

2014 ◽  
Vol 1666 ◽  
Author(s):  
Siva Konduri ◽  
Watson Mulder ◽  
Vikram L. Dalal
Keyword(s):  
Gas Phase ◽  
Silicon Germanium ◽  
Alloy Composition ◽  
Defect Density ◽  
Solid Phase ◽  
Nanocrystalline Silicon ◽  
Photovoltaic Devices ◽  
Density Spectrum ◽  
Photo Detectors ◽  
P Type

ABSTRACTNanocrystalline Silicon-Germanium (Si,Ge) is a potentially useful material for photovoltaic devices and photo-detectors. Its bandgap can be controlled across the entire bandgap region from that of Si to that of Ge by changing the alloy composition during growth. In this work, we study the fabrication and electronic properties of nanocrystalline devices grown using PECVD techniques. We discovered that upon adding Ge to Si during growth, the intrinsic layer changes from n-type to p-type. We can change it back to n-type by using ppm levels of phosphorus, and make reasonable quality devices when phosphine gas was added to the deposition mix. We also measured the defect density spectrum using capacitance frequency techniques, and find that defect density decreases systematically as more phosphine is added to the gas phase. We also find that the ratio of Germanium to Silicon in the solid phase is higher than the ratio in the gas phase.

STUDY ON AlSb POLYCRYSTALLINE THIN FILMS PREPARED BY VACUUM CO-EVAPORATION

2011 ◽  
Vol 25 (13) ◽  
pp. 1747-1755 ◽  
Author(s):  
HUIJIN SONG ◽  
LILI WU ◽  
JIAGUI ZHENG ◽  
LIANGHUAN FENG ◽  
ZHI LEI ◽  
...  
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Open Circuit ◽  
Photovoltaic Devices ◽  
Amorphous Thin Films ◽  
Optical Absorption Measurement ◽  
Heating And Cooling ◽  
Polycrystalline Thin Films ◽  
Bandgap Semiconductors ◽  
P Type

In this paper, the AlSb polycrystalline thin films were prepared by vacuum co-evaporation technology and their structural, optical and electrical properties have been studied. XRD results showed that the as-deposited AlSb amorphous thin films transformed to polycrystalline state after annealed in vacuum at temperatures higher than 540°C. The process of phase change was observed to depend on the annealing temperature and the film composition. Some irreversible changes took place in the annealed films during the measurement of the temperature dependence of the film conductance. The conductance activation energy of the film was 0.132 and 0.32 eV during the heating and cooling process, respectively, which suggests the decrease of Sb vacancies in the AlSb film after the heating. Hall effect and optical absorption measurement showed that the AlSb polycrystalline thin films were p-type, indirect bandgap semiconductors with absorption coefficient higher than 8 × 104 cm -1. TCO/CdS/AlSb photovoltaic devices with the local open circuit voltage of over 200 mV have been fabricated.

Next-Generation Transparent Conducting Oxides for Photovoltaic Cells: an Overview

2001 ◽  
Vol 668 ◽  
Author(s):  
David Ginley ◽  
Tim Coutts ◽  
John Perkins ◽  
David Young ◽  
Xiaonan Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Transparent Conducting Oxides ◽  
Transparent Conductors ◽  
Critical Element ◽  
Antireflection Coatings ◽  
Photovoltaic Devices ◽  
Materials Properties ◽  
Conducting Oxides ◽  
Transparent Conducting ◽  
P Type

ABSTRACTTransparent conducting oxides (TCOs) are becoming a more critical element in thin-film photovoltaic devices. In the continued drive to increase efficiency and stability while reducing cost and optimizing performance, the optical, electrical, and materials properties of TCOs gain increasing importance. TCOs can perform a variety of important functions, including contacts, antireflection coatings, and chemical barriers. In this paper, we will review some of the current advances in the field of transparent conductors and, where possible, will relate these advances to thin-film photovoltaic devices. Highlights will be on the rapidly growing collection of new n- and p-type materials; the implications of these materials on PV have not been fully assessed.

New Photovoltaic Devices Based on the Sensitization of p-type Semiconductors: Challenges and Opportunities

2010 ◽  
Vol 43 (8) ◽  
pp. 1063-1071 ◽  
Author(s):  
Fabrice Odobel ◽  
Loïc Le Pleux ◽  
Yann Pellegrin ◽  
Errol Blart
Keyword(s):  
Photovoltaic Devices ◽  
Challenges And Opportunities ◽  
P Type

scholarly journals Numerical Insights into the Influence of Electrical Properties of n-CdS Buffer Layer on the Performance of SLG/Mo/p-Absorber/n-CdS/n-ZnO/Ag Configured Thin Film Photovoltaic Devices

Coatings ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 52
Author(s):  
Asmaa Soheil Najm ◽  
Puvaneswaran Chelvanathan ◽  
Sieh Kiong Tiong ◽  
Mohammad Tanvirul Ferdaous ◽  
Seyed Ahmad Shahahmadi ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Band Gap ◽  
Carrier Concentration ◽  
Buffer Layer ◽  
Carrier Mobility ◽  
Absorber Layer ◽  
Photovoltaic Devices ◽  
Wide Range ◽  
P Type

A CdS thin film buffer layer has been widely used as conventional n-type heterojunction partner both in established and emerging thin film photovoltaic devices. In this study, we perform numerical simulation to elucidate the influence of electrical properties of the CdS buffer layer, essentially in terms of carrier mobility and carrier concentration on the performance of SLG/Mo/p-Absorber/n-CdS/n-ZnO/Ag configured thin film photovoltaic devices, by using the Solar Cell Capacitance Simulator (SCAPS-1D). A wide range of p-type absorber layers with a band gap from 0.9 to 1.7 eV and electron affinity from 3.7 to 4.7 eV have been considered in this simulation study. For an ideal absorber layer (no defect), the carrier mobility and carrier concentration of CdS buffer layer do not significantly alter the maximum attainable efficiency. Generally, it was revealed that for an absorber layer with a conduction band offset (CBO) that is more than 0.3 eV, Jsc is strongly dependent on the carrier mobility and carrier concentration of the CdS buffer layer, whereas Voc is predominantly dependent on the back contact barrier height. However, as the bulk defect density of the absorber layer is increased from 1014 to 1018 cm−3, a CdS buffer layer with higher carrier mobility and carrier concentration is an imperative requirement to a yield device with higher conversion efficiency and a larger band gap-CBO window for realization of a functional device. Most tellingly, simulation outcomes from this study reveal that electrical properties of the CdS buffer layer play a decisive role in determining the progress of emerging p-type photo-absorber layer materials, particularly during the embryonic device development stage.

Sign in / Sign up

Export Citation Format

Share Document