Polypyridyl chromium(iii) complexes for non-volatile memory application: impact of the coordination sphere on memory device performance

2018 ◽  
Vol 6 (6) ◽  
pp. 1445-1450 ◽  
Author(s):  
Balamurugan Kandasamy ◽  
Ganesamoorthi Ramar ◽  
Li Zhou ◽  
Su-Ting Han ◽  
Shishir Venkatesh ◽  
...  
Keyword(s):  
Coordination Sphere ◽  
Molecular Design ◽  
Memory Device ◽  
Device Performance ◽  
Memory Devices ◽  
Non Volatile Memory ◽  
Volatile Memory

To gain insights into the molecular design, the memory devices of various Cr(iii) complexes have been studied.

Human hair keratin for physically transient resistive switching memory devices

2019 ◽  
Vol 7 (11) ◽  
pp. 3315-3321 ◽  
Author(s):  
Qiqi Lin ◽  
Shilei Hao ◽  
Wei Hu ◽  
Ming Wang ◽  
Zhigang Zang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Human Hair ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Switching Performance ◽  
Hair Keratin ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Memory

A physically transient non-volatile memory device made of keratin exhibits great resistive switching performance.

Programmable, electroforming-free TiOx/TaOx heterojunction-based non-volatile memory devices

Nanoscale ◽  
2019 ◽  
Vol 11 (39) ◽  
pp. 18159-18168 ◽  
Author(s):  
Saurabh Srivastava ◽  
Joseph Palathinkal Thomas ◽  
Kam Tong Leung
Keyword(s):  
Memory Device ◽  
Memory Devices ◽  
Data Retention ◽  
Pt Electrodes ◽  
Non Volatile Memory ◽  
Volatile Memory

A TiOx/TaOx heterojunction sandwiched between a pair of Pt electrodes provides an electroforming-free non-volatile memory device with a remarkably low programming voltage (+0.5 V), high endurance (104 cycles) and data retention (105 s).

scholarly journals Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 301
Author(s):  
Young Jin Choi ◽  
Jihyun Kim ◽  
Min Je Kim ◽  
Hwa Sook Ryu ◽  
Han Young Woo ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Memory Device ◽  
Non Volatile Memory ◽  
Device Applications ◽  
Donor Acceptor ◽  
Effect Transistor ◽  
Volatile Memory ◽  
Memory Applications

Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-effect transistor and non-volatile memory applications. As-synthesized PDPPT-TT was simply spin-coated on a substrate for the device fabrications. The PDPPT-TT based field-effect transistor showed ambipolar electrical transfer characteristics. Furthermore, a gold nanoparticle-embedded dielectric layer was used as a charge trapping layer for the non-volatile memory device applications. The non-volatile memory device showed clear memory window formation as applied gate voltage increases, and electrical stability was evaluated by performing retention and cycling tests. In summary, we demonstrate that a donor–acceptor-type organic semiconductor molecule shows great potential for ambipolar field-effect transistors and non-volatile memory device applications as an important class of materials.

Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim
Keyword(s):  
Resistive Switching ◽  
Retention Time ◽  
Elevated Temperatures ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

Programmable polymer thin film and non-volatile memory device

2004 ◽  
Vol 3 (12) ◽  
pp. 918-922 ◽  
Author(s):  
Jianyong Ouyang ◽  
Chih-Wei Chu ◽  
Charles R. Szmanda ◽  
Liping Ma ◽  
Yang Yang
Keyword(s):  
Thin Film ◽  
Memory Device ◽  
Polymer Thin Film ◽  
Non Volatile Memory ◽  
Volatile Memory

A star polymer with a metallo-phthalocyanine core as a tunable charge storage material for nonvolatile transistor memory devices

2018 ◽  
Vol 6 (11) ◽  
pp. 2724-2732 ◽  
Author(s):  
Junko Aimi ◽  
Po-Hung Wang ◽  
Chien-Chung Shih ◽  
Chih-Feng Huang ◽  
Takashi Nakanishi ◽  
...  
Keyword(s):  
Memory Device ◽  
Star Polymer ◽  
Charge Storage ◽  
Device Performance ◽  
Memory Devices ◽  
Storage Material ◽  
Novel Strategy ◽  
A Charge

A novel strategy to control the OFET memory device performance has been demonstrated using a metallophthalocyanine-cored star-shaped polystyrene as a charge storage material.

Organic non-volatile memory device based on cellulose fibers

2018 ◽  
Vol 232 ◽  
pp. 99-102 ◽  
Author(s):  
Anuja P. Rananavare ◽  
Sunil J. Kadam ◽  
Shivadatta V. Prabhu ◽  
Sachin S. Chavan ◽  
Prashant V. Anbhule ◽  
...  
Keyword(s):  
Cellulose Fibers ◽  
Memory Device ◽  
Non Volatile Memory ◽  
Volatile Memory

Fluorenone/carbazole based bipolar small molecules for non-volatile memory devices

2020 ◽  
Vol 78 ◽  
pp. 105584 ◽  
Author(s):  
Jia-Qin Yang ◽  
Li-Yu Ting ◽  
Ruopeng Wang ◽  
Jing-Yu Mao ◽  
Yi Ren ◽  
...  
Keyword(s):  
Small Molecules ◽  
Memory Devices ◽  
Non Volatile Memory ◽  
Volatile Memory
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