Efficient and reliable surface charge transfer doping of black phosphorus via atomic layer deposited MgO toward high performance complementary circuits

Nanoscale ◽  
2018 ◽  
Vol 10 (36) ◽  
pp. 17007-17014 ◽  
Author(s):  
Wugang Liao ◽  
Lin Wang ◽  
Li Chen ◽  
Wei Wei ◽  
Zhe Zeng ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Surface Charge ◽  
High Performance ◽  
Atomic Layer ◽  
Black Phosphorus ◽  
N Doping

Efficient n-doping for BP transistors is realized via atomic layer deposited MgO for the implementation of high-performance complementary logic inverters.

Surface charge transfer doping of monolayer molybdenum disulfide by black phosphorus quantum dots

2016 ◽  
Vol 27 (50) ◽  
pp. 505204 ◽  
Author(s):  
Wei Wang ◽  
Xinyue Niu ◽  
Haolei Qian ◽  
Liao Guan ◽  
Ming Zhao ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Charge Transfer ◽  
Surface Charge ◽  
Molybdenum Disulfide ◽  
Black Phosphorus ◽  
Black Phosphorus Quantum Dots

High-performance NO2-gas sensing of ultrasmall ZnFe2O4 nanoparticles based on surface charge transfer

2019 ◽  
Vol 7 (10) ◽  
pp. 5539-5551 ◽  
Author(s):  
Ke Li ◽  
Yuanyuan Luo ◽  
Bo Liu ◽  
Lei Gao ◽  
Guotao Duan
Keyword(s):  
Charge Transfer ◽  
Surface Charge ◽  
High Performance ◽  
Gas Sensing ◽  
Ex Situ ◽  
Sensing Mechanism ◽  
Znfe2o4 Nanoparticles

Ex situ photoluminescence characterization reveals the gas-sensing mechanism of ZFO NPs to NO2 based on charge transfer.

Surface Charge Transfer Doping of Low-Dimensional Nanostructures toward High-Performance Nanodevices

2016 ◽  
Vol 28 (47) ◽  
pp. 10409-10442 ◽  
Author(s):  
Xiujuan Zhang ◽  
Zhibin Shao ◽  
Xiaohong Zhang ◽  
Yuanyuan He ◽  
Jiansheng Jie
Keyword(s):  
Charge Transfer ◽  
Surface Charge ◽  
High Performance ◽  
Low Dimensional

Surface charge transfer doping induced inversion layer for high-performance graphene/silicon heterojunction solar cells

2017 ◽  
Vol 5 (1) ◽  
pp. 285-291 ◽  
Author(s):  
Ke Ding ◽  
Xiujuan Zhang ◽  
Feifei Xia ◽  
Rongbin Wang ◽  
Yawei Kuang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Charge Transfer ◽  
Surface Charge ◽  
High Performance ◽  
Inversion Layer ◽  
Heterojunction Solar Cells ◽  
Device Efficiency ◽  
P Type ◽  
Silicon Heterojunction Solar Cells

Surface charge transfer doping (SCTD) induced p-type inversion layer was implemented in the graphene/silicon heterojunction solar cells, leading to significant improvement of device efficiency.

scholarly journals Surface Charge Transfer Doping: Surface Charge Transfer Doping of Low-Dimensional Nanostructures toward High-Performance Nanodevices (Adv. Mater. 47/2016)

2016 ◽  
Vol 28 (47) ◽  
pp. 10575-10575 ◽  
Author(s):  
Xiujuan Zhang ◽  
Zhibin Shao ◽  
Xiaohong Zhang ◽  
Yuanyuan He ◽  
Jiansheng Jie
Keyword(s):  
Charge Transfer ◽  
Surface Charge ◽  
High Performance ◽  
Low Dimensional

Surface charge transfer doping and effective passivation of black phosphorus field effect transistors

2020 ◽  
Vol 8 (19) ◽  
pp. 6595-6604
Author(s):  
Boran Xing ◽  
Ying Yu ◽  
Jiadong Yao ◽  
Xinyue Niu ◽  
Xiaoyuan Yan ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Metal Oxide ◽  
Surface Charge ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Black Phosphorus ◽  
Electron Doping

A metal oxide/h-BN/BP structure was built to realize electron doping and air stability for BPFETs.

Improved performance of MoS2 FET by In-situ NH3 Doping in ALD-Al2O3 Dielectric

2021 ◽  
Author(s):  
Xiaoting Sun ◽  
Yadong Zhang ◽  
Kunpeng Jia ◽  
Guoliang Tian ◽  
Jiahan Yu ◽  
...  
Keyword(s):  
Dielectric Layer ◽  
High Performance ◽  
Carrier Transport ◽  
Oxygen Vacancies ◽  
Gate Dielectric ◽  
Film Growth ◽  
Atomic Layer ◽  
N Doping ◽  
Order Of Magnitude

Abstract Since the defects such as traps and oxygen vacancies exist in the dielectric, it is difficult for fabricating high-performance MoS2 FET using atomic-layer-deposition (ALD) Al2O3 as gate dielectric layer. In this paper, NH3 in-situ doping, one kind of process treatment approach during ALD-grown Al2O3, is used to decrease these defects for better device characteristics. The MoS2 FETs with this technique have been well fabricated and the effect of different NH3 in-situ doping sequences among growth cycles are investigated in detail. Compared with general counterparts, the devices with NH3 in-situ doping demonstrate obvious performance enhancements: the I on/I off is improved by one order of magnitude, from 1.33×105 to 3.56×106, and the threshold voltage shifted from -0.74 V to -0.12 V, and a small subthreshold swing of 105mV/dec is achieved. The improvements of MoS2 FET performance are attributed to N-doping by the introduction of NH3 during the Al2O3 ALD-growth process, which leads to the reduction of surface roughness of the dielectric layer and the repair of the oxygen vacancies in the Al2O3 layer. Furthermore, the MoS2 FET with in-situ NH3 doping introduced after Al and O precursors filling cycles demonstrated the best performance, which may be because that NH3 final doping after film growth restores more oxygen vacancies to screen more charge scattering in the MoS2 channel. The reported method provides one promising method to reduce charge scattering in carrier transport for highperformance MoS2 devices.

Surface charge transfer properties of high-performance Ag-decorated ZnO photocatalysts

2011 ◽  
Vol 44 (31) ◽  
pp. 315502 ◽  
Author(s):  
Yongchun Lu ◽  
Yanhong Lin ◽  
Dejun Wang ◽  
Lingling Wang ◽  
Tengfeng Xie ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Surface Charge ◽  
High Performance ◽  
Transfer Properties

Sequentially Triggered Delivery System of Black Phosphorus Quantum Dots with Surface Charge-Switching Ability for Precise Tumor Radiosensitization

ACS Nano ◽  
2018 ◽  
Vol 12 (12) ◽  
pp. 12401-12415 ◽  
Author(s):  
Leung Chan ◽  
Pan Gao ◽  
Wenhua Zhou ◽  
Chaoming Mei ◽  
Yanyu Huang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Surface Charge ◽  
Delivery System ◽  
Black Phosphorus ◽  
Black Phosphorus Quantum Dots
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