Preparation of ZnO thin films by plasma-assisted atomic layer deposition for the application to thin film transistors

Author(s):  
Mai Tani ◽  
Yumi Kawamura ◽  
Masahiro Horita ◽  
Yasuaki Ishikawa ◽  
Yukiharu Uraoka
RSC Advances ◽  
2018 ◽  
Vol 8 (60) ◽  
pp. 34215-34223
Author(s):  
So-Yeong Na ◽  
Sung-Min Yoon

Oxide thin films transistors (TFTs) with Hf and Al co-incorporated ZnO active channels prepared by atomic-layer deposition are presented.


2016 ◽  
Vol 18 (23) ◽  
pp. 16033-16038 ◽  
Author(s):  
Vitaly Gurylev ◽  
Chung-Yi Su ◽  
Tsong-Pyng Perng

A polycrystalline ZnO thin film prepared by atomic layer deposition was annealed in hydrogen at 10 bar and 350–450 °C.


2021 ◽  
Vol 27 (S1) ◽  
pp. 2660-2662
Author(s):  
David Elam ◽  
Eduardo Ortega ◽  
Andrey Chabanov ◽  
Arturo Ponce

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