Robust two-dimensional bipolar magnetic semiconductors by defect engineering

2018 ◽  
Vol 6 (31) ◽  
pp. 8435-8443 ◽  
Author(s):  
Haixia Cheng ◽  
Jun Zhou ◽  
Ming Yang ◽  
Lei Shen ◽  
Jiajun Linghu ◽  
...  
Keyword(s):  
Magnetic Semiconductors ◽  
Magnetic Semiconductor ◽  
Semiconductor Materials ◽  
Two Dimensional ◽  
Defect Engineering ◽  
Electrical Control ◽  
Spin Polarized

100% spin polarized currents can be obtained in bipolar magnetic semiconductor materials by electrical control.

MAGNETORESISTANCE OF NARROW GAP MAGNETIC SEMICONDUCTOR HETEROJUNCTIONS

SPIN ◽  
2013 ◽  
Vol 03 (04) ◽  
pp. 1340011
Author(s):  
B. W. WESSELS
Keyword(s):  
Magnetic Fields ◽  
Room Temperature ◽  
Magnetic Semiconductors ◽  
Magnetic Semiconductor ◽  
High Magnetic Fields ◽  
Narrow Gap ◽  
Carrier Scattering ◽  
Spin Polarized ◽  
Semiconductor Spintronics ◽  
Semiconductor Heterojunctions

Narrow gap III–V semiconductors have been investigated for semiconductor spintronics. By alloying these semiconductors with manganese magnetic semiconductors result. Large magnetoresistance (MR) effects have been observed in narrow gap magnetic semiconductor p–n heterojunctions. The MR which is positive is attributed to spin selective carrier scattering. For an InMnAs / InAs heterojunction a diode MR of 2680% is observed at room temperature and high magnetic fields. This work indicates that highly spin-polarized magnetic semiconductor heterojunctions can be realized that operate at room temperature. Devices based on the MR include spin diodes and bipolar magnetic junction transistors. We utilize the diode MR states to create a binary logic family.

scholarly journals Light helicity detector based on 2D magnetic semiconductor CrI3

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Xing Cheng ◽  
Zhixuan Cheng ◽  
Cong Wang ◽  
Minglai Li ◽  
Pingfan Gu ◽  
...  
Keyword(s):  
Magnetic State ◽  
Magnetic Semiconductors ◽  
Magnetic Circular Dichroism ◽  
Optoelectronic Devices ◽  
Polarized Light ◽  
Magnetic Semiconductor ◽  
Two Dimensional ◽  
Circularly Polarized Light ◽  
Circularly Polarized ◽  
Physical Phenomena

AbstractTwo-dimensional magnetic semiconductors provide a platform for studying physical phenomena at atomically thin limit, and promise magneto-optoelectronic devices application. Here, we report light helicity detectors based on graphene-CrI3-graphene vdW heterostructures. We investigate the circularly polarized light excited current and reflective magnetic circular dichroism (RMCD) under various magnetic fields in both monolayer and multilayer CrI3 devices. The devices exhibit clear helicity-selective photoresponse behavior determined by the magnetic state of CrI3. We also find abnormal negative photocurrents at higher bias in both monolayer and multilayer CrI3. A possible explanation is proposed for this phenomenon. Our work reveals the interplay between magnetic and optoelectronic properties in CrI3 and paves the way to developing spin-optoelectronic devices.

scholarly journals First-principles Investigations of Magnetic Semiconductors: An example of Transition Metal Decorated Two-dimensional SnS Monolayer

Nanomaterials ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 789 ◽  
Author(s):  
Fangfang Wang ◽  
Liyu Zhou ◽  
Zhen Ma ◽  
Mingxue He ◽  
Fang Wu ◽  
...  
Keyword(s):  
Transition Metal ◽  
First Principles ◽  
Magnetic Semiconductors ◽  
Magnetic Moments ◽  
Magnetic Semiconductor ◽  
Two Dimensional ◽  
Semiconducting Materials ◽  
2D Semiconductors ◽  
The Stability ◽  
Intact Surface

The absence of magnetic moments in pristine two-dimensional (2D) semiconducting materials has attracted many research interests. Transition-metal (TM) decoration has been found to be an effective strategy to introduce magnetic moments in non-magnetic 2D semiconductors. However, the stability of TM atoms modified 2D semiconductors has not been well explored. Here, taking 2D Tin (II) sulfide (SnS) monolayer as a prototype, we explored the stability of magnetic semiconductors through this method. In our studies, all possible configurations of TM decoration have been considered, namely, adsorption on the intact surface, S vacancy, and Sn vacancy. Based on the energy gain and electronic analysis, our results revealed that most of the TM atoms will form a cluster, and only several TM atoms can be effectively doped into the SnS monolayer. Furthermore, the band calculations showed that only Mn substitution will give rise to a magnetic semiconductor. Thus, the reported results here provide some hidden information for further realization of the magnetic semiconductors and serve as a paradigm to prepare 2D magnetic semiconductors.

scholarly journals Manipulation of hot carrier cooling dynamics in two-dimensional Dion–Jacobson hybrid perovskites via Rashba band splitting

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Jun Yin ◽  
Rounak Naphade ◽  
Partha Maity ◽  
Luis Gutiérrez-Arzaluz ◽  
Dhaifallah Almalawi ◽  
...  
Keyword(s):  
Transient Absorption ◽  
Phonon Scattering ◽  
Transient Absorption Spectroscopy ◽  
Band Model ◽  
Two Dimensional ◽  
Spintronic Devices ◽  
Hot Carrier ◽  
Band Splitting ◽  
Perovskite Materials ◽  
Spin Polarized

AbstractHot-carrier cooling processes of perovskite materials are typically described by a single parabolic band model that includes the effects of carrier-phonon scattering, hot phonon bottleneck, and Auger heating. However, little is known (if anything) about the cooling processes in which the spin-degenerate parabolic band splits into two spin-polarized bands, i.e., the Rashba band splitting effect. Here, we investigated the hot-carrier cooling processes for two slightly different compositions of two-dimensional Dion–Jacobson hybrid perovskites, namely, (3AMP)PbI4 and (4AMP)PbI4 (3AMP = 3-(aminomethyl)piperidinium; 4AMP = 4-(aminomethyl)piperidinium), using a combination of ultrafast transient absorption spectroscopy and first-principles calculations. In (4AMP)PbI4, upon Rashba band splitting, the spin-dependent scattering of hot electrons is responsible for accelerating hot-carrier cooling at longer delays. Importantly, the hot-carrier cooling of (4AMP)PbI4 can be extended by manipulating the spin state of the hot carriers. Our findings suggest a new approach for prolonging hot-carrier cooling in hybrid perovskites, which is conducive to further improving the performance of hot-carrier-based optoelectronic and spintronic devices.

Two dimensional CrGa2Se4: A spin-gapless ferromagnetic semiconductor with inclined uniaxial anisotropy

Nanoscale ◽  
2021 ◽  
Author(s):  
Qian Chen ◽  
Ruqian Wang ◽  
Zhaocong Huang ◽  
Shijun Yuan ◽  
Haowei Wang ◽  
...  
Keyword(s):  
Critical Temperature ◽  
Material Science ◽  
2D Materials ◽  
Uniaxial Anisotropy ◽  
Magnetic Semiconductor ◽  
Ferromagnetic Semiconductor ◽  
Two Dimensional ◽  
High Critical Temperature

The magnetic semiconductor with high critical temperature has long been the focus in material science and recently is also known as one of the fundamental questions in two-dimensional (2D) materials....

Effects of spin-phonon coupling on two-dimensional ferromagnetic semiconductors: a case study of iron and ruthenium trihalides

Nanoscale ◽  
2021 ◽  
Author(s):  
Yinqiao Liu ◽  
Qinxi Liu ◽  
Ying Liu ◽  
Xue Jiang ◽  
Xiaoliang Zhang ◽  
...  
Keyword(s):  
Transport Properties ◽  
Data Security ◽  
Thermal Transport ◽  
Magnetic Semiconductors ◽  
Ferromagnetic Semiconductors ◽  
Two Dimensional ◽  
Phonon Coupling ◽  
Thermal Transport Properties

The contributions of spin-phonon coupling (SPC) to spin and thermal transport properties are important in the emerging two-dimensional (2D) magnetic semiconductors and are relevant for the data security and working...

scholarly journals Van der Waals electride: Toward intrinsic two-dimensional ferromagnetism of spin-polarized anionic electrons

2021 ◽  
pp. 100473
Author(s):  
Hyun Yong Song ◽  
Byung Il Yoo ◽  
Jin-Ho Choi ◽  
Se-Hwang Kang ◽  
Joonho Bang ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Two Dimensional ◽  
Spin Polarized
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