Zero-thermal-quenching and photoluminescence tuning with the assistance of carriers from defect cluster traps

2018 ◽  
Vol 6 (40) ◽  
pp. 10687-10692 ◽  
Author(s):  
Yali Chen ◽  
Binxun Yu ◽  
Jing Gou ◽  
Shengzhong Frank Liu
Keyword(s):  
High Temperature ◽  
Thermal Quenching ◽  
Defect Cluster

The zero-thermal-quenching behavior at high temperature up to 225 °C was benefited from the carriers captured by deeper traps, which can be verified by thermoluminescence spectra.

A study of negative-thermal-quenching (Ba/Ca)AlSi5O2N7:Eu2+ phosphors

2021 ◽  
Author(s):  
Hongping Ma ◽  
Shixu Tao ◽  
Youjie Hua ◽  
Jun Zheng ◽  
Luyi Lou ◽  
...  
Keyword(s):  
High Temperature ◽  
Light Emitting Diodes ◽  
Thermal Quenching ◽  
Luminous Intensity ◽  
Light Emitting ◽  
Temperature Resistance ◽  
High Temperature Resistance ◽  
New Generation

Phosphor is an important part of the new generation of light-emitting diodes (LEDs), which requires high luminous intensity and high-temperature resistance. In this study, a series of excellent (Ba1-x-yCax)AlSi5O2N7:yEu2+ phosphors...

Reply to ‘Comment on “Zero-thermal-quenching and photoluminescence tuning with the assistance of carriers from defect cluster traps”’

2020 ◽  
Vol 8 (3) ◽  
pp. 1153-1156
Author(s):  
Yali Chen ◽  
Binxun Yu ◽  
Jing Gou ◽  
Shengzhong Frank Liu
Keyword(s):  
Thermal Quenching ◽  
Vital Role ◽  
Defect Cluster ◽  
Zinc Vacancy ◽  
Vacancy Defects ◽  
Photoluminescence Behavior

In this response to the comments on our article, a series of Sr8Zn1−xSc(PO4)7:12%Tb3+ (SZ1−xSPO:12%Tb3+) phosphors were synthesized, and their photoluminescence behavior confirmed that zinc vacancy defects play a vital role in the SZ1−xSPO:12%Tb3+ phosphor.

Anti-Thermal-Quenching Red-Emitting GdNbO4: Pr3+ Phosphors Based on Metal-to-Metal Charge Transfer for Optical Thermometry Application

2021 ◽  
Author(s):  
Wanggui Ye ◽  
Chaoyang Ma ◽  
Yanbin Li ◽  
Chong Zhao ◽  
Yuzhen Wang ◽  
...  
Keyword(s):  
Charge Transfer ◽  
High Temperature ◽  
Thermal Quenching ◽  
Thermally Stable ◽  
Metal Charge ◽  
Optical Thermometry ◽  
Metal Charge Transfer

The thermal quenching of phosphors seems to be inevitable, which severely limits their applications related to high temperature. Therefore, the development of thermally stable phosphor and the exploration of anti-thermal...

scholarly journals Correction: Zero-thermal-quenching and photoluminescence tuning with the assistance of carriers from defect cluster traps

2019 ◽  
Vol 7 (35) ◽  
pp. 11040-11040 ◽  
Author(s):  
Yali Chen ◽  
Binxun Yu ◽  
Jing Gou ◽  
Shengzhong Frank Liu
Keyword(s):  
Thermal Quenching ◽  
Defect Cluster

Correction for ‘Zero-thermal-quenching and photoluminescence tuning with the assistance of carriers from defect cluster traps’ by Yali Chen et al., J. Mater. Chem. C, 2018, 6, 10687–10692.

Comment on “Zero-thermal-quenching and photoluminescence tuning with assistance of carriers from defect cluster traps” by Chen et al., J. Mater. Chem. C, 2018, 6, 10687–10692

2020 ◽  
Vol 8 (3) ◽  
pp. 1151-1152
Author(s):  
Yu Xiao ◽  
Zhendong Hao
Keyword(s):  
Thermal Quenching ◽  
Intrinsic Property ◽  
Defect Cluster

Chen et al. (J. Mater. Chem. C, 2018, 6, 10687–10692) reported that the zero-thermal-quenching behavior of Tb3+ was the compensation of different trap depths. In this comment, we argue that this unique behavior is just an intrinsic property of Tb3+.

Influence Of Growth Conditions On The Thermal Quenching Of Photoluminescence From Sige/Si Quantum Structures

1998 ◽  
Vol 533 ◽  
Author(s):  
I. A. Buyanova ◽  
W. M. Chen ◽  
W.-X. Ni ◽  
G. V. Hansson ◽  
B. Monemar
Keyword(s):  
High Temperature ◽  
Quantum Wells ◽  
Growth Temperature ◽  
Thermal Activation ◽  
Molecular Beam ◽  
Thermal Quenching ◽  
Growth Conditions ◽  
Mbe Growth ◽  
Temperature Growth ◽  
Optically Detected

AbstractIn this work we study effects of growth temperature and use of surfactant during growth on thermal quenching of photoluminescence (PL) from SiGe/Si quantum wells (QWs) grown by molecular beam epitaxy (MBE). We show that although all investigated structures demonstrate intense and sharp excitonic emissions from the SiGe QWs at liquid helium temperature, thermal quenching of this PL critically depends on the growth conditions. In particular, the use of low (⁤ 550°C) growth temperatures or employing Sb as a surfactant during high temperature (620°C) growth considerably degrades the PL thermal quenching behaviour by introducing some competing quenching processes with low activation energies of about 5 meV. The optimum growth conditions judging from the PL thermal behaviour are realised during high temperature growth without surfactant (620°C). Even higher growth temperature is shown to be required during surfactant mediated growth to improve the thermal quenching behaviour. From optically detected magnetic resonance (ODMR) studies, the competing quenching processes are attributed to a thermal activation of non-radiative defects introduced during either low-temperature MBE growth or during surfactant-mediated growth.

Zero thermal-quenching photoluminescence in fresnoite glass achieved with the assistance of carrier compensating and surface crystal clusters

2019 ◽  
Vol 7 (28) ◽  
pp. 8655-8659 ◽  
Author(s):  
Wenqing Xie ◽  
Panpan Li ◽  
Yun Wang ◽  
Qijing Zhu ◽  
Yunjie Zhang ◽  
...  
Keyword(s):  
Energy Transfer ◽  
High Temperature ◽  
Glass Ceramic ◽  
Thermal Quenching ◽  
Temperature Threshold ◽  
Transfer Processes ◽  
Rigid Frame ◽  
Surface Crystal

The glass-ceramic breaks through the high-temperature threshold limitation (over 300 °C) owning to rigid frame-protected energy transfer processes.

Influence of Thermo-Mechanical Processing on the Microstructure of Beryllia Dispersed Nickel Alloys

1973 ◽  
Vol 31 ◽  
pp. 184-185
Author(s):  
M.S. Grewal ◽  
S.A. Sastri ◽  
N.J. Grant
Keyword(s):  
High Temperature ◽  
Nickel Alloys ◽  
Thermomechanical Processing ◽  
Cold Work ◽  
High Temperature Strength ◽  
Strengthening Effect ◽  
Mechanical Processing ◽  
Uniform Dispersion ◽  
Oxide Particles ◽  
Nickel Base

Currently there is a great interest in developing nickel base alloys with fine and uniform dispersion of stable oxide particles, for high temperature applications. It is well known that the high temperature strength and stability of an oxide dispersed alloy can be greatly improved by appropriate thermomechanical processing, but the mechanism of this strengthening effect is not well understood. This investigation was undertaken to study the dislocation substructures formed in beryllia dispersed nickel alloys as a function of cold work both with and without intermediate anneals. Two alloys, one Ni-lv/oBeo and other Ni-4.5Mo-30Co-2v/oBeo were investigated. The influence of the substructures produced by Thermo-Mechanical Processing (TMP) on the high temperature creep properties of these alloys was also evaluated.

Application of TEM to Deformation, Wear, and Fracture of Ceramics

1974 ◽  
Vol 32 ◽  
pp. 472-473
Author(s):  
B. J. Hockey
Keyword(s):  
Wear Resistance ◽  
High Temperature ◽  
Mechanical Behavior ◽  
Brittle Materials ◽  
High Temperature Strength ◽  
Wide Range ◽  
Corrosive Environments ◽  
Further Development

Ceramics, such as Al2O3 and SiC have numerous current and potential uses in applications where high temperature strength, hardness, and wear resistance are required often in corrosive environments. These materials are, however, highly anisotropic and brittle, so that their mechanical behavior is often unpredictable. The further development of these materials will require a better understanding of the basic mechanisms controlling deformation, wear, and fracture.The purpose of this talk is to describe applications of TEM to the study of the deformation, wear, and fracture of Al2O3. Similar studies are currently being conducted on SiC and the techniques involved should be applicable to a wide range of hard, brittle materials.

Lattice Imaging of Grain Boundaries in Ceramics

1977 ◽  
Vol 35 ◽  
pp. 114-115
Author(s):  
D. R. Clarke ◽  
G. Thomas
Keyword(s):  
Mechanical Properties ◽  
High Temperature ◽  
Silicon Nitride ◽  
Grain Boundaries ◽  
High Temperature Strength ◽  
Current Interest ◽  
Lattice Imaging ◽  
Special Significance ◽  
Structural Applications ◽  
Refractory Ceramics

Grain boundaries have long held a special significance to ceramicists. In part, this has been because it has been impossible until now to actually observe the boundaries themselves. Just as important, however, is the fact that the grain boundaries and their environs have a determing influence on both the mechanisms by which powder compaction occurs during fabrication, and on the overall mechanical properties of the material. One area where the grain boundary plays a particularly important role is in the high temperature strength of hot-pressed ceramics. This is a subject of current interest as extensive efforts are being made to develop ceramics, such as silicon nitride alloys, for high temperature structural applications. In this presentation we describe how the techniques of lattice fringe imaging have made it possible to study the grain boundaries in a number of refractory ceramics, and illustrate some of the findings.

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