Reversible resistive switching behaviour in CVD grown, large area MoOx

Fahmida Rahman; Taimur Ahmed; Sumeet Walia; Edwin Mayes; Sharath Sriram; Madhu Bhaskaran; Sivacarendran Balendhran

doi:10.1039/c8nr04407d

Reversible resistive switching behaviour in CVD grown, large area MoOx

Nanoscale ◽

10.1039/c8nr04407d ◽

2018 ◽

Vol 10 (42) ◽

pp. 19711-19719 ◽

Cited By ~ 15

Author(s):

Fahmida Rahman ◽

Taimur Ahmed ◽

Sumeet Walia ◽

Edwin Mayes ◽

Sharath Sriram ◽

...

Keyword(s):

Resistive Switching ◽

Memory Devices ◽

Large Area ◽

Switching Behaviour

Reversible resistive switching behaviour is observed in MoOx memory devices, at relatively low set/reset voltages, with switching ratios exceeding 103.

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Resistive Switching Memory based on Silver-doped Chitosan Thin Films

MRS Advances ◽

10.1557/adv.2018.72 ◽

2018 ◽

Vol 3 (33) ◽

pp. 1943-1948 ◽

Cited By ~ 3

Author(s):

C. Strobel ◽

T. Sandner ◽

S. Strehle

Keyword(s):

Thin Films ◽

Resistive Switching ◽

Tin Oxide ◽

Bottom Electrode ◽

Low Cost ◽

Memory Devices ◽

Neuromorphic Computing ◽

Resistive Switching Memory ◽

Switching Behaviour ◽

Switching Memory

AbstractMemristors represent an intriguing two-terminal device strategy potentially able to replace conventional memory devices as well as to support neuromorphic computing architectures. Here, we present the resistive switching behaviour of the sustainable and low-cost biopolymer chitosan, which can be extracted from natural chitin present for instance in crab exoskeletons. The biopolymer films were doped with Ag ions in varying concentrations and sandwiched between a bottom electrode such as fluorinated-tin-oxide and a silver top electrode. Silver-doped devices showed an overall promising resistive switching behaviour for doping concentrations between 0.5 to 1 wt% AgNO3. As bottom electrode fluorinated-tin-oxide, nickel, silver and titanium were studied and multiple write and erase cycles were recorded. However, the overall reproducibility and stability are still insufficient to support broader applicability.

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A solution processed metal–oxo cluster for rewritable resistive memory devices

Journal of Materials Chemistry C ◽

10.1039/c8tc05188g ◽

2019 ◽

Vol 7 (4) ◽

pp. 843-852 ◽

Cited By ~ 5

Author(s):

Kui Zhou ◽

Guanglong Ding ◽

Chen Zhang ◽

Ziyu Lv ◽

Shenghuang Luo ◽

...

Keyword(s):

Activation Energy ◽

Resistive Switching ◽

Memory Device ◽

Memory Devices ◽

Resistive Memory ◽

Solution Processed ◽

Switching Behaviour

A memory device based on metal–oxo cluster-assembled materials demonstrates a redox-based resistive switching behaviour which is correlated with the migration of hydroxide ions with low activation energy.

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Sol-Gel Processed ZrO2 Based Forming-Free Resistive Switching Memory Devices

Materials Science Forum ◽

10.4028/www.scientific.net/msf.1048.198 ◽

2022 ◽

Vol 1048 ◽

pp. 198-202

Author(s):

K.M. Shafi ◽

K. Muhammed Shibu ◽

N.K. Sulfikarali ◽

K.P. Biju

Keyword(s):

Thin Film ◽

Resistive Switching ◽

Sol Gel ◽

Random Access ◽

Random Access Memory ◽

Resistive Random Access Memory ◽

Memory Devices ◽

Access Memory ◽

Bipolar Resistive Switching ◽

Switching Behaviour

In this work, we fabricated ZrO2 based resistive random access memory by sol-gel spin coating technique and investigated its structural, optical and resistive switching properties. The X-ray diffraction pattern revealed that 400 °C annealed ZrO2 thin film has tetragonal structure. The optical band gap value of ZrO2 thin film obtained was 5.51 eV. The resistive switching behaviour of W/ZrO2/ITO capacitor like structure was studied. It was found that no initial electroforming process required for the device. The fabricated devices show a self-compliance bipolar resistive switching behaviour and have high on off ratio (>102). Our result suggests that solution processed ZrO2 has great potential to develop transparent and flexible resistive random access memory devices.

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Tin-selenide as a futuristic material: properties and applications

RSC Advances ◽

10.1039/d0ra09807h ◽

2021 ◽

Vol 11 (12) ◽

pp. 6477-6503 ◽

Cited By ~ 1

Author(s):

Manoj Kumar ◽

Sanju Rani ◽

Yogesh Singh ◽

Kuldeep Singh Gour ◽

Vidya Nand Singh

Keyword(s):

Solar Cells ◽

Band Gap ◽

Resistive Switching ◽

Gas Sensors ◽

Material Properties ◽

Topological Insulators ◽

Memory Devices ◽

Tin Selenide ◽

Switching Devices

SnSe/SnSe2 has diverse applications like solar cells, photodetectors, memory devices, Li and Na-ion batteries, gas sensors, photocatalysis, supercapacitors, topological insulators, resistive switching devices due to its optimal band gap.

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Spray-Coated, Volatile and Nonvolatile, Two-Terminal, Resistive Switching Memory Devices Comprising Liquid-Exfoliated Black Phosphorus and Graphene Layers

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.3029552 ◽

2020 ◽

Vol 67 (12) ◽

pp. 5484-5489

Author(s):

Yooyeon Jo ◽

Christos Dimitrakopoulos

Keyword(s):

Resistive Switching ◽

Black Phosphorus ◽

Memory Devices ◽

Graphene Layers ◽

Resistive Switching Memory ◽

Switching Memory

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Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

Journal of Materials Chemistry C ◽

10.1039/c6tc03607d ◽

2016 ◽

Vol 4 (46) ◽

pp. 10967-10972 ◽

Cited By ~ 35

Author(s):

Sujaya Kumar Vishwanath ◽

Jihoon Kim

Keyword(s):

Resistive Switching ◽

Retention Time ◽

Elevated Temperatures ◽

Switching Behavior ◽

Memory Devices ◽

Bipolar Switching ◽

Non Volatile Memory ◽

Volatile Memory ◽

Switching Characteristics ◽

Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

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