scholarly journals Chemical vapor deposition of titanium nitride thin films: kinetics and experiments

CrystEngComm ◽  
2019 ◽  
Vol 21 (26) ◽  
pp. 3974-3981 ◽  
Author(s):  
Juan Su ◽  
Raphaël Boichot ◽  
Elisabeth Blanquet ◽  
Frédéric Mercier ◽  
Michel Pons
Keyword(s):  
Thin Films ◽  
Stainless Steel ◽  
Chemical Vapor Deposition ◽  
Kinetic Model ◽  
Titanium Nitride ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Tin Films ◽  
Simplified Kinetic Model

Titanium nitride (TiN) films were grown by chemical vapor deposition (CVD) from titanium chlorides, ammonia (NH3) and hydrogen (H2) on single crystal c-plane sapphire, WC–Co, stainless steel and amorphous graphite substrates. The preferred orientation and color of TiN layer are studied by combining a simplified kinetic model with experiments.

Microstructural and Photoluminescence Studies on Europium Doped Yttrium Oxide Films Synthesized by Metallorganic Vapor Deposition

1997 ◽  
Vol 495 ◽  
Author(s):  
G. A. Hirata ◽  
J. McKittrick ◽  
J. Yi ◽  
S. G. Pattillo ◽  
K. V. Salazar ◽  
...  
Keyword(s):  
Thin Films ◽  
Stainless Steel ◽  
Chemical Vapor Deposition ◽  
Yttrium Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
Post Annealing ◽  
Photoluminescence Studies ◽  
Volatile Precursors

ABSTRACTThe microstructural and luminescence properties of europium doped yttrium oxide (Y2O3:Eu) thin films deposited by metallorganic chemical vapor deposition are presented in this work. It was found that surface morphology, crystallinity and photoluminescent emission properties are strongly dependent on substrate temperature during deposition. The depositions were carried out in a stainless steel chamber using yttrium and europium 2,2,6,6,-tetramethyl–3,5-heptanedionates as volatile precursors and O2 as the reactant gas. Post-annealing increased the crystallite size and decreased the lattice parameter, resulting in an increased photoluminescent emission intensity.

Chemical vapor deposition of titanium nitride thin films from tetrakis(dimethylamido)titanium and hydrazine as a coreactant

2000 ◽  
Vol 15 (11) ◽  
pp. 2414-2424 ◽  
Author(s):  
Carmela Amato-Wierda ◽  
Derk A. Wierda
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Growth Rates ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Air Exposure ◽  
Tin Films ◽  
Tin Film

Hydrazine was used as a coreactant with tetrakis(dimethylamido)titanium for the low-temperature chemical vapor deposition of TiN between 50 and 200 °C. The TiN film-growth rates ranged from 5 to 45 nm/min. Ti:N ratios of approximately 1:1 were achieved. The films contain between 2 and 25 at.% carbon, as well as up to 36 at.% oxygen resulting from diffusion after air exposure. The resistivity of these films is approximately 104 μΩ cm. Annealing the films in ammonia enhances their crystallinity. The best TiN films were produced at 200 °C from a 2.7% hydrazine–ammonia mixture. The Ti:N ratio of these films is approximately 1:1, and they contain no carbon or oxygen. These films exhibit the highest growth rates observed.

scholarly journals Structure and properties of Mn3O4 thin films grown on single crystal substrates by chemical vapor deposition

2019 ◽  
Vol 223 ◽  
pp. 591-596 ◽  
Author(s):  
Lorenzo Bigiani ◽  
Chiara Maccato ◽  
Alberto Gasparotto ◽  
Cinzia Sada ◽  
Davide Barreca
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Structure And Properties
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