Microstructural and Photoluminescence Studies on Europium Doped Yttrium Oxide Films Synthesized by Metallorganic Vapor Deposition

1997 ◽  
Vol 495 ◽  
Author(s):  
G. A. Hirata ◽  
J. McKittrick ◽  
J. Yi ◽  
S. G. Pattillo ◽  
K. V. Salazar ◽  
...  
Keyword(s):  
Thin Films ◽  
Stainless Steel ◽  
Chemical Vapor Deposition ◽  
Yttrium Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
Post Annealing ◽  
Photoluminescence Studies ◽  
Volatile Precursors

ABSTRACTThe microstructural and luminescence properties of europium doped yttrium oxide (Y2O3:Eu) thin films deposited by metallorganic chemical vapor deposition are presented in this work. It was found that surface morphology, crystallinity and photoluminescent emission properties are strongly dependent on substrate temperature during deposition. The depositions were carried out in a stainless steel chamber using yttrium and europium 2,2,6,6,-tetramethyl–3,5-heptanedionates as volatile precursors and O2 as the reactant gas. Post-annealing increased the crystallite size and decreased the lattice parameter, resulting in an increased photoluminescent emission intensity.

scholarly journals Chemical vapor deposition of titanium nitride thin films: kinetics and experiments

CrystEngComm ◽  
2019 ◽  
Vol 21 (26) ◽  
pp. 3974-3981 ◽  
Author(s):  
Juan Su ◽  
Raphaël Boichot ◽  
Elisabeth Blanquet ◽  
Frédéric Mercier ◽  
Michel Pons
Keyword(s):  
Thin Films ◽  
Stainless Steel ◽  
Chemical Vapor Deposition ◽  
Kinetic Model ◽  
Titanium Nitride ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Tin Films ◽  
Simplified Kinetic Model

Titanium nitride (TiN) films were grown by chemical vapor deposition (CVD) from titanium chlorides, ammonia (NH3) and hydrogen (H2) on single crystal c-plane sapphire, WC–Co, stainless steel and amorphous graphite substrates. The preferred orientation and color of TiN layer are studied by combining a simplified kinetic model with experiments.

BaTiO3 Thin Films Prepared by Organometallic Chemical Vapor Deposition

1991 ◽  
Vol 243 ◽  
Author(s):  
L.A. Wills ◽  
B.W. Wessels ◽  
D.L. Schulz ◽  
T.J. Marks
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Composition And Structure ◽  
Volatile Precursors ◽  
Surface Morphologies ◽  
Organometallic Chemical Vapor Deposition

AbstractBaTiO3 thin films have been prepared by low pressure organometallic chemical vapor deposition on (100) MgO and (100) LaAlO3 substrates using the volatile precursors, titanium(IV) tetraisopropoxide and barium (hexafluoroacetylacetonate)2 (tetraglyme). The phase composition and structure of the films depends on the reactant partial pressure, growth temperature, and substrate. High quality, epitaxial BaTiO3 films can be prepared in-situ on LaAlO3 as confirmed by x-ray diffraction measurements. These BaTiO3 films exhibit smooth surface morphologies as evidenced by scanning electron microscopy. Electrical resistivity measurements indicate that the films are semi-insulating.

scholarly journals Effects of post-annealing on MoS2 thin films synthesized by multi-step chemical vapor deposition

2021 ◽  
Vol 11 ◽  
pp. 184798042098153
Author(s):  
Muhammad Hilmi Johari ◽  
Mohamad Shukri Sirat ◽  
Mohd Ambri Mohamed ◽  
Yutaka Wakayama ◽  
Abdul Rahman Mohmad
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Synthesis Method ◽  
Chemical Vapor ◽  
Annealed Sample ◽  
Structural Quality ◽  
High Quality ◽  
Post Annealing

Multi-step chemical vapor deposition (CVD) is a synthesis method which is capable of producing a uniform, large area, and high-quality thin films. In this work, we report the effect of post-annealing on the structural and optical properties of few-layers (FL) MoS2 thin films synthesized by multi-step CVD. Based on atomic force microscopic image, the thickness of the MoS2 thin film is ∼3 nm, which is equivalent to five layers. After annealing at 900°C for 17 min, intensity of the A1g and [Formula: see text] Raman modes increased by ∼3 times while the full-width-at-half-maximum (FWHM)* reduced from ∼10 cm−1 to ∼7.5 cm−1 for A1g and from ∼13.6 cm−1 to ∼7.5 cm−1 for [Formula: see text]. Both of the as-grown and annealed samples showed X-ray (002) diffraction peak at 14.2° but the intensity was more prominent for the annealed sample. It was found that the annealed sample showed clear and distinct absorbance peaks at 666, 615, 448, 401, and 278 nm which correspond to the A, B, C, D, and E excitons, respectively. The results indicate that annealing significantly improved the optical and structural quality of the MoS2 film. Field-effect transistor based on annealed MoS2 thin film was fabricated and showed electron mobility of 0.21 cm2V−1s−1, on/off ratio of 1.3 × 102 and a threshold voltage of 0.72 V. Our work highlights the importance of high-temperature annealing in multi-step CVD to obtain a uniform and high-quality FL MoS2 thin films.

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

NITROGEN INCORPORATED HYDROGENATED AMORPHOUS CARBON THIN FILMS DEPOSITED BY MICROWAVE SURFACE-WAVE PLASMA CHEMICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Wave ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Hydrogenated Amorphous Carbon ◽  
Plasma Chemical Vapor Deposition ◽  
Hydrogenated Amorphous

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.

A Novel Direct Liquid Injection Low Pressure Chemical Vapor Deposition System (DLI-LPCVD) for the Deposition of Thin Films

2017 ◽  
Vol 19 (8) ◽  
pp. 1700193 ◽  
Author(s):  
Mattias Vervaele ◽  
Bert De Roo ◽  
Jolien Debehets ◽  
Marilyne Sousa ◽  
Luman Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Liquid Injection ◽  
Pressure Chemical ◽  
Direct Liquid Injection
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