Synthesis and characterization of novel zinc precursors for ZnO thin film deposition by atomic layer deposition

2020 ◽  
Vol 49 (14) ◽  
pp. 4306-4314
Author(s):  
Seong Ho Han ◽  
Raphael Edem Agbenyeke ◽  
Ga Yeon Lee ◽  
Bo Keun Park ◽  
Chang Gyoun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Layer ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Zno Thin Films ◽  
Synthesis And Characterization ◽  
Zno Thin Film ◽  
Layer Deposition

Novel zinc precursors were designed, synthesized and used for the deposition of ZnO thin films by ALD.

Distribution pattern and allocation of defects in hydrogenated ZnO thin films

2016 ◽  
Vol 18 (23) ◽  
pp. 16033-16038 ◽  
Author(s):  
Vitaly Gurylev ◽  
Chung-Yi Su ◽  
Tsong-Pyng Perng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Layer Deposition ◽  
Distribution Pattern ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Layer Deposition

A polycrystalline ZnO thin film prepared by atomic layer deposition was annealed in hydrogen at 10 bar and 350–450 °C.

scholarly journals Studies on the Surface and Optical Properties of Ta-Doped ZnO Thin Films Deposited By Thermionic Vacuum Arc

2021 ◽  
Author(s):  
Suat Pat ◽  
Reza Mohammadigharehbagh ◽  
Nihan Akkurt ◽  
Şadan Korkmaz
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Si Substrate ◽  
Crystal Network ◽  
Doped Zno

Abstract In this research, Ta doped ZnO thin films have been deposited onto glass and Si substrate by Thermionic vacuum arc (TVA) thin film deposition system. TVA is anodic plasma thin film deposition system and it is used to relatively high-quality thin films deposition. ZnO thin films have direct optical band gap of 3.37 eV. Tantalum is an efficient higher-valance element. Ta atom gives the more electrons compared to Zinc atom and their ionic radius are very close to each other, so substituted element does not bring into additional stress in crystal network. The deposited thin films were analyzed by field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy, atomic force microscopy, UV-Vis spectrophotometry and interferometer. To change the band gap properties of the ZnO thin film, Ta doping was used and band gap of Ta doped ZnO thin film was obtained 3.1 eV by Tauc’s method. The wt % ratios for Zn/Ta were calculated as 0.45 and 0.42 for the films deposited onto glass and Si substrate, respectively. Crystallite sizes of Ta doped ZnO thin film was decreased by changing substrate material. To the best of our knowledge, substituted Ta elements connected to the oxygen atom in crystal network and orthorhombic β′-Ta2O5 were detected in the all films structure. Their band gaps of the β′-Ta2O5 were measured as 2.70 eV and 2.60 eV for Ta-doped ZnO thin films deposited onto glass and Si substrate, respectively. Up to day, the band gap of the β′-Ta2O5 was calculated by density function theory. According to results, β′-Ta2O5 structure was found as embedded from in the ZnO crystal network.

Stability Studies on Optical and Structure Properties of Zinc Oxide Thin Films Exposed to Different Environment

2013 ◽  
Vol 667 ◽  
pp. 549-552
Author(s):  
A.S.M. Rodzi ◽  
Mohamad Hafiz Mamat ◽  
M.N. Berhan ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Absorption Coefficient ◽  
Near Infrared ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Zno Films ◽  
Zno Thin Film ◽  
Oxide Thin Films

The properties of zinc oxide thin films were prepared by sol-gel spin-coating method have been presented. This study based on optical and electrical properties of ZnO thin film. The effects of annealing temperatures that exposed with two environments properties have been investigated. Environments exposed in room (27°C) and hot (80°C) temperatures which are stored by various days. Solution preparation, thin film deposition and characterization process were involved in this project. The ZnO films were characterized using UV-Vis-NIR spectrophotometer for optical properties. From that equipment, the percentage of transmittance (%) and absorption coefficient spectra were obtained. With two environments showed have different absorption coefficient are reveal and all films have low absorbance in visible and near infrared (IR) region but have high UV absorption properties. From SEM investigations the surface morphology of ZnO thin film shows the particles size become smaller and denser in hot temperatures while in room temperatures have porosity between particles.

Low Resistance Ni Thin Film Deposition for Nickel Silicide by Atomic Layer Deposition

2005 ◽  
Author(s):  
K. W. Do ◽  
C. M. Yang ◽  
I. S. Kang ◽  
K. M. Kim ◽  
K. H. Back ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Thin Film Deposition ◽  
Nickel Silicide ◽  
Film Deposition ◽  
Low Resistance ◽  
Layer Deposition

Atomic layer deposition and characterization of Ga-doped ZnO thin films

2007 ◽  
Vol 42 (1-6) ◽  
pp. 172-175 ◽  
Author(s):  
K. Saito ◽  
Y. Hiratsuka ◽  
A. Omata ◽  
H. Makino ◽  
S. Kishimoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Layer Deposition ◽  
Doped Zno

Synthesis and characterization of PbTe thin films by atomic layer deposition

2014 ◽  
Vol 211 (6) ◽  
pp. 1329-1333 ◽  
Author(s):  
K. Zhang ◽  
A. D. Ramalingom Pillai ◽  
M. Tangirala ◽  
D. Nminibapiel ◽  
K. Bollenbach ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Synthesis And Characterization ◽  
Layer Deposition

scholarly journals Reaction path analysis for chemical vapor deposition and atomic layer deposition processes: A study of titania thin-film deposition

2017 ◽  
Vol 254 (10) ◽  
pp. 1700091 ◽  
Author(s):  
Hossein Salami ◽  
Krishnaprasath Ramakrishnasubramanian ◽  
Raymond A. Adomaitis
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Reaction Path ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Titania Thin Film ◽  
Layer Deposition ◽  
Deposition Processes

Making Metallic Thin Films Atomically Flat

2020 ◽  
Vol 29 (7/8) ◽  
pp. 3-12
Author(s):  
Su Jae KIM ◽  
Miyeon CHEON ◽  
Se-Young JEONG
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Lattice Mismatch ◽  
Atomic Layer ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Heteroepitaxial Growth ◽  
Metallic Surfaces ◽  
Crystalline Film ◽  
Atomically Flat

Can we control the flatness of the surface of a thin film down to the level of individual atoms? Can we further make such an ultraflat surface on a wafer scale? For such purposes, the current deposition methods, including molecular beam epitaxy (MBE), atomic layer deposition (ALD) and conventional sputtering methods, are still not adequate. In this article, we introduce a novel thin film deposition technique developed by modifying a simple sputtering method to make atomically flat metallic surfaces and a new way to investigate the structural details of thin films grown at the atomic level. For thin film, heteroepitaxial growth of a crystalline film on a different crystalline substrate is usual, and the lattice mismatch between the crystalline film and the substrate occurring in heteroepitaxy produces many misfits at the interface, which create various defects, including dislocations and grain boundaries that eventually lead to a rough surface and the deterioration of the overall quality of the crystal. The metamorphic growth method utilizing the extended atomic distance mismatch (EADM) helps to achieve successful growth of thin films in spite of a large lattice mismatch by calculating the match for a relatively long period in advance. Having an ultraflat surface for thin films made of metals such as copper has many advantages. Several advantages and possible applications of metal thin films with ultraflat surfaces are introduced.

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