High-quality graphene transfer via directional etching of metal substrates

AbstractGraphene is a material with unique properties that can be exploited in electronics, catalysis, energy, and bio-related fields. Although, for maximal utilization of this material, high-quality graphene is required at both the growth process and after transfer of the graphene film to the application-compatible substrate. Chemical vapor deposition (CVD) is an important method for growing high-quality graphene on non-technological substrates (as, metal substrates, e.g., copper foil). Thus, there are also considerable efforts toward the efficient and non-damaging transfer of quality of graphene on to technologically relevant materials and systems. In this review article, a range of graphene current transfer techniques are reviewed from the standpoint of their impact on contamination control and structural integrity preservation of the as-produced graphene. In addition, their scalability, cost- and time-effectiveness are discussed. We summarize with a perspective on the transfer challenges, alternative options and future developments toward graphene technology.

Download Full-text

Influence of Thermal Barriers on Heat Flow in High Quality Chemical Vapor Deposited Diamond

Physical Review Letters ◽

10.1103/physrevlett.80.117 ◽

1998 ◽

Vol 80 (1) ◽

pp. 117-120 ◽

Cited By ~ 11

Author(s):

J. Hartmann ◽

M. Costello ◽

M. Reichling

Keyword(s):

Heat Flow ◽

Chemical Vapor ◽

High Quality ◽

Thermal Barriers ◽

Chemical Vapor Deposited

Download Full-text

Toward the High-Quality Graphene for Optoelectronic Applications by Optimization of the Growth and Transfer Parameters

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.834-836.33 ◽

2013 ◽

Vol 834-836 ◽

pp. 33-36

Author(s):

Lang Wang ◽

Jian Hua Zhang ◽

Lian Qiao Yang

Keyword(s):

Surface Condition ◽

Chemical Vapor ◽

Reflow Process ◽

High Quality ◽

Cu Substrate ◽

Nucleation Sites ◽

Higher Temperature ◽

Transfer Parameters ◽

Optoelectronic Applications ◽

Pre Treatment

In this paper, the process parameters of graphene during fabrication and transfer are investigated. Cu is utilized as the substrate and chemical vapor deposition are used to obtain graphene. The results show that, the surface condition of the Cu substrate tends to be worse than as-received after a relatively higher temperature (1035°C) annealing and growth process, which lead to bad graphene quality. In addition, pre-treatment of Cu substrate by acetic acid is helpful to reduce the nucleation sites. Reflow process before PMMA etching is an effective method to eliminate the wrinkles formed during transfer. High-quality graphene for optoelectronic applications were obtained based on the optimized fabrication and transfer process.

Download Full-text

High-quality AlN films grown on chemical vapor-deposited graphene films

MATEC Web of Conferences ◽

10.1051/matecconf/20166001004 ◽

2016 ◽

Vol 60 ◽

pp. 01004

Author(s):

Bin-Hao Chen ◽

Hsiu-Hao Hsu ◽

David T.W. Lin

Keyword(s):

Chemical Vapor ◽

High Quality ◽

Graphene Films ◽

Chemical Vapor Deposited

Download Full-text

Fabrication and Characterization of High Quality Micro Diamonds by Hot Filament CVD

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.325.582 ◽

2011 ◽

Vol 325 ◽

pp. 582-587

Author(s):

T. Zhang ◽

Fang Hong Sun ◽

Bin Shen ◽

Z.M. Zhang

Keyword(s):

Silicon Wafer ◽

Chemical Vapor ◽

High Quality ◽

Acetone Concentration ◽

Vapor Deposition Technique ◽

Hot Filament Cvd ◽

Average Size ◽

Hot Filament

The high quality micro diamonds with the euhedral diamond faces are fabricated by hot filament chemical vapor deposition technique (HFCVD). The high pressure and high temperature (HPHT) single crystal diamonds in size of 1 μm are used as seeds. In order to disperse the diamond seeds uniformly on a silicon wafer, the photoresist solution with diamond seeds are performed on the silicon wafer by a spin coater machine. The high substrate temperature and low acetone concentration are employed for decreasing the nucleation rate and accelerating the growth rate. The morphology and quality of the micro diamonds are observed and analyzed by SEM and Raman spectroscopy. After 4 hours of the deposition, the surface imperfections of the diamond seeds have disappeared completely, and the euhedral diamond faces with (111) and (100) begin to emerge. Subsequently, 8 hours of deposition leads to a final average size of approximately 4 μm. The micro diamonds have very high quality, and the surfaces appear flat and smooth in this stage. The results indicate that it is an effective way to eliminate the defects of the HPHT micro diamonds and develop high quality diamonds with well-defined morphology by HFCVD technique.

Download Full-text

High Quality Inductively Coupled Plasma Chemical Vapor Deposited SiOxNy Gas Barrier Films for OLED Display

ECS Meeting Abstracts ◽

10.1149/ma2014-02/29/1594 ◽

2014 ◽

Keyword(s):

Inductively Coupled Plasma ◽

Chemical Vapor ◽

Plasma Chemical ◽

High Quality ◽

Gas Barrier ◽

Barrier Films ◽

Inductively Coupled ◽

Chemical Vapor Deposited ◽

Oled Display

Download Full-text

Film microstructure-deposition condition relationships in the growth of epitaxial NiO films by metalorganic chemical vapor deposition on oxide and metal substrates

Journal of Materials Research ◽

10.1557/jmr.1999.0149 ◽

1999 ◽

Vol 14 (3) ◽

pp. 1132-1136 ◽

Cited By ~ 11

Author(s):

Anchuan Wang ◽

John A. Belot ◽

Tobin J. Marks

Keyword(s):

Chemical Vapor Deposition ◽

Flow Rate ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Carbon Contamination ◽

Metal Substrates ◽

Nio Films ◽

Metalorganic Chemical

High-quality epitaxial or highly textured NiO thin films can be grown at temperatures of 400–750°C by low-pressure metalorganic chemical vapor deposition (MOCVD) on MgO, SrTiO3, C-cut sapphire, as well as on single crystal and highly textured Ni (200) metal substrates using Ni(dpm)2 (dpm – dipivaloylmethanate) as the volatile precursor and O2 or H2O as the oxidizer/protonolyzer. X-ray diffraction (XRD), scanning electron microscopy/energy dispersive detection (SEM/EDX), and atomic force microscopy (AFM) confirm that the O2-derived NiO films are smooth and that the quality of the epitaxy can be improved by decreasing the growth temperature and/or the precursor flow rate. However, low growth temperatures (400–500 °C) lead to rougher surfaces and carbon contamination. The H2O-derived NiO films, which can be obtained only at relatively high temperatures (650–750 °C), exhibit slightly broader ω scan full width half-maximum (FWHM) values and rougher surfaces but no carbon contamination. Using H2O as the oxidizer/protonolyzer, smooth and highly textured NiO (111) films can be grown on easily oxidized single crystal and highly textured Ni (200) metal substrates, which is impossible when O2 is the oxidizer. The textural quality of these films depends on both the quality of the metal substrates and the gaseous precursor flow rate.

Download Full-text

Lift-Off Assisted Patterning of Few Layers Graphene

Micromachines ◽

10.3390/mi10060426 ◽

2019 ◽

Vol 10 (6) ◽

pp. 426 ◽

Cited By ~ 4

Author(s):

Alessio Verna ◽

Simone Luigi Marasso ◽

Paola Rivolo ◽

Matteo Parmeggiani ◽

Marco Laurenti ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Seed Layer ◽

Chemical Vapor ◽

Critical Issue ◽

High Quality ◽

Patterning Technique ◽

Lift Off ◽

Few Layer Graphene

Graphene and 2D materials have been exploited in a growing number of applications and the quality of the deposited layer has been found to be a critical issue for the functionality of the developed devices. Particularly, Chemical Vapor Deposition (CVD) of high quality graphene should be preserved without defects also in the subsequent processes of transferring and patterning. In this work, a lift-off assisted patterning process of Few Layer Graphene (FLG) has been developed to obtain a significant simplification of the whole transferring method and a conformal growth on micrometre size features. The process is based on the lift-off of the catalyst seed layer prior to the FLG deposition. Starting from a SiO2 finished Silicon substrate, a photolithographic step has been carried out to define the micro patterns, then an evaporation of Pt thin film on Al2O3 adhesion layer has been performed. Subsequently, the Pt/Al2O3 lift-off step has been attained using a dimethyl sulfoxide (DMSO) bath. The FLG was grown directly on the patterned Pt seed layer by Chemical Vapor Deposition (CVD). Raman spectroscopy was applied on the patterned area in order to investigate the quality of the obtained graphene. Following the novel lift-off assisted patterning technique a minimization of the de-wetting phenomenon for temperatures up to 1000 °C was achieved and micropatterns, down to 10 µm, were easily covered with a high quality FLG.

Download Full-text