Transparent flexible thermoelectric material based on non-toxic earth-abundant p-type copper iodide thin film

Simultaneously transparent and flexible conductive materials are in demand to follow the current trend in flexible technology. A highly transparent and flexible thermoelectric generator of 17 p–n modules was constructed based on copper iodide thin films.

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Thin Film WSe2 for Use as a Photovoltaic Absorber Material

MRS Proceedings ◽

10.1557/opl.2014.739 ◽

2014 ◽

Vol 1670 ◽

Cited By ~ 2

Author(s):

Qinglei Ma ◽

Hrachya Kyureghian ◽

Joel D. Banninga ◽

N. J. Ianno

Keyword(s):

Thin Film ◽

Band Gap ◽

Optical Band Gap ◽

Visible Spectrum ◽

Absorber Material ◽

Excellent Candidate ◽

Earth Abundant ◽

Type Semiconductor ◽

Sputter Deposited ◽

P Type

ABSTRACTAn excellent candidate for an earth abundant absorber material is WSe2 which can be directly grown as a p-type semiconductor with a band gap near 1.4 eV. In this work we present the structural, optical, and electrical properties of thin film WSe2 grown via the selenization of sputter deposited tungsten films. We will show that highly textured films with an optical band gap in range of 1.4 eV, and absorption coefficients greater than 105/cm across the visible spectrum can be easily achieved. In addition we will present Hall Effect and carrier density measurements as well, where will show densities in the 1017cm-3 range and p-type Hall mobilities greater than 10 cm2/V-s range can be obtained. We employ these results to numerically simulate solar cells based on this material, where we will show efficiencies greater than 20% are possible.

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Nanostructured p-type Cr/V2O5thin films with boosted thermoelectric properties

Journal of Materials Chemistry A ◽

10.1039/c3ta15168a ◽

2014 ◽

Vol 2 (18) ◽

pp. 6456-6462 ◽

Cited By ~ 21

Author(s):

Joana Loureiro ◽

Joao R. Santos ◽

Adriana Nogueira ◽

Frederic Wyczisk ◽

Laurent Divay ◽

...

Keyword(s):

Thin Film ◽

Thermoelectric Properties ◽

Thermoelectric Material ◽

Thermal Evaporation ◽

P Type

This work reports the influence of a Cr layer in boosting the thermoelectric properties of a non-toxic and abundant thermoelectric material, V2O5, deposited as a thin film by thermal evaporation and annealed at 500 °C, reachingZT> 0.1.

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Pencil painting like preparation for flexible thermoelectric material of high-performance p-type Na1.4Co2O4 and novel n-type NaxCo2O4

Journal of Materiomics ◽

10.1016/j.jmat.2021.01.006 ◽

2021 ◽

Author(s):

Zhen Tian ◽

Jun Wang ◽

Xinba Yaer ◽

Hui-Jun Kang ◽

Xiao-Huan Wang ◽

...

Keyword(s):

Thermoelectric Material ◽

High Performance ◽

P Type ◽

Flexible Thermoelectric

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Effective performance improvement of organic thin film transistors with multi-layer modifications

The European Physical Journal Applied Physics ◽

10.1051/epjap/2020200138 ◽

2020 ◽

Vol 91 (3) ◽

pp. 30201

Author(s):

Hang Yu ◽

Jianlin Zhou ◽

Yuanyuan Hao ◽

Yao Ni

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Performance Enhancement ◽

Organic Thin Film Transistors ◽

Electrical Performance ◽

Hole Injection ◽

Organic Thin Film ◽

Effective Performance ◽

Significant Performance ◽

P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

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Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

MRS Proceedings ◽

10.1557/proc-403-489 ◽

1995 ◽

Vol 403 ◽

Cited By ~ 1

Author(s):

T. S. Hayes ◽

F. T. Ray ◽

K. P. Trumble ◽

E. P. Kvam

Keyword(s):

Thin Film ◽

Thin Films ◽

Silicon Carbide ◽

Ohmic Contacts ◽

Microstructure Development ◽

P Type ◽

Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

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A Multi Objective Evolutionary Algorithm for the Parameters Extraction of Organic Thin Film Transistors Models

Electronics ◽

10.3390/electronics10080939 ◽

2021 ◽

Vol 10 (8) ◽

pp. 939

Author(s):

Rosario Schiano Lo Moriello ◽

Davide Ruggiero ◽

Leopoldo Angrisani ◽

Enzo Caputo ◽

Francesco de Pandi ◽

...

Keyword(s):

Thin Film ◽

Evolutionary Algorithm ◽

Design Stage ◽

Model Parameters ◽

Organic Transistors ◽

Organic Thin Film ◽

Multi Objective ◽

Application Fields ◽

Channel Lengths ◽

P Type

Thanks to their peculiar features, organic transistors are proving to be a valuable alternative to traditional semiconducting devices in several application fields; however, before releasing their exploitation, simulating their behaviour through adequate circuital models could be advisable during the design stage of electronic circuits and/or boards. Consequently, accurately extracting the parameter value of those models is fundamental to developing useful libraries for hardware design environments. To face the considered problem, the authors present a method based on successive application of Single- and Multi-Objective Evolutionary Algorithm for the optimal tuning of model parameters of organic transistors on thin film (OTFT). In particular, parameters are first roughly estimated to assure the best fit with the experimental transfer characteristics; the estimates are successively refined through the multi-objective strategy by also matching the values of the experimental mobility. The performance of the method has been assessed by estimating the parameters value of both P-type and N-type OTFTs characterized by different values of channel lengths; the obtained results evidence that the proposed method can obtain suitable parameters values for all the considered channel lengths.

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