3C–, 4H–, and 6H–SiC crystal habitus and interfacial behaviours in high temperature Si-based solvents
Keyword(s):
We investigated the stable habit planes of 3C–, 4H– and 6H–SiC in Si and Si–Cr-based solvents using Ostwald ripening of SiC particles, and found that particle-growth behaviour varied significantly with both SiC polytypes and solvent compositions.