Mixed-Dimensional WS2/GaSb Heterojunction for High-performance p-n Diode and Junction Field-Effect Transistor
Keyword(s):
P Type
◽
GaSb nanowires integrated on a silicon-based substrate are of great significance for p-type field-effect transistors. In particular, due to the continued miniaturization of circuits, such as avoiding complex dielectric engineering,...
2019 ◽
Vol 40
(2)
◽
pp. 318-320
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2016 ◽
Vol 55
(5S)
◽
pp. 05FJ07
◽
Keyword(s):