Fabrication of high-performance photodetector based on AlGaN/GaN hetero-field-effect transistors with p-GaN gate

2006 ◽  
Vol 955 ◽  
Author(s):  
Shuichi Miura ◽  
Takahiro Fujii ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
Hiroshi Amano ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Uv Light ◽  
Signal To Noise Ratio ◽  
High Signal ◽  
Dark Current Density ◽  
Effect Transistor ◽  
P Type

ABSTRACTAn AlGaN/GaN photo-hetero-field-effect transistor (photo-HFET) with a p-type GaN gate was fabricated and its properties were compared with those of a HFET without a p-type GaN layer. The photo-HFET with a p-GaN gate exhibited a high signal-to-noise ratio of five orders of magnitude and a dark current density of 10 nA/mm at a drain-source bias of 5 V. In contrast, when the photo-HFET was irradiated with 365 nm (490 μW/cm2) UV light, a photocurrent of over 1 mA/mm was achieved. The responsivity of the device was over 1 × 105 A/W.

scholarly journals 2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

Mixed-Dimensional WS2/GaSb Heterojunction for High-performance p-n Diode and Junction Field-Effect Transistor

2022 ◽  
Author(s):  
Zichao Cheng ◽  
Xiufeng Song ◽  
Lianfu Jiang ◽  
Lude Wang ◽  
Jiamin Sun ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Effect Transistor ◽  
P Type ◽  
Silicon Based

GaSb nanowires integrated on a silicon-based substrate are of great significance for p-type field-effect transistors. In particular, due to the continued miniaturization of circuits, such as avoiding complex dielectric engineering,...

scholarly journals Analysis on Band Layer Design and J-V characteristics of Zinc Oxide Based Junction Field Effect Transistor

2020 ◽  
Vol 1 (2) ◽  
pp. 14-21
Author(s):  
Chaw Su Nandar Hlaing Chaw ◽  
Thiri Nwe
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Characteristic Curve ◽  
Vital Role ◽  
Semiconductor Material ◽  
Mathematical Equations ◽  
Effect Transistor

This paper presents the band gap design and J-V characteristic curve of Zinc Oxide (ZnO) based on Junction Field Effect Transistor (JFET). The physical properties for analysis of semiconductor field effect transistor play a vital role in semiconductor measurements to obtain the high-performance devices. The main objective of this research is to design and analyse the band diagram design of semiconductor materials which are used for high performance junction field effect transistor. In this paper, the fundamental theory of semiconductors, the electrical properties analysis and bandgap design of materials for junction field effect transistor are described. Firstly, the energy bandgaps are performed based on the existing mathematical equations and the required parameters depending on the specified semiconductor material. Secondly, the J-V characteristic curves of semiconductor material are discussed in this paper. In order to achieve the current-voltage characteristic for specific junction field effect transistor, numerical values of each parameter which are included in analysis are defined and then these resultant values are predicted for the performance of junction field effect transistors. The computerized analyses have also mentioned in this paper.

scholarly journals Diamond Based Field-Effect Transistors of Zr Gate withSiNxDielectric Layers

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
W. Wang ◽  
C. Hu ◽  
S. Y. Li ◽  
F. N. Li ◽  
Z. C. Liu ◽  
...  
Keyword(s):  
Carrier Density ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Conduction Channel ◽  
Effect Transistor ◽  
P Type ◽  
Interface Bond ◽  
Transfer Properties

Investigation of Zr-gate diamond field-effect transistor withSiNxdielectric layers (SD-FET) has been carried out. SD-FET works in normally on depletion mode with p-type channel, whose sheet carrier density and hole mobility are evaluated to be 2.17 × 1013 cm−2and 24.4 cm2·V−1·s−1, respectively. The output and transfer properties indicate the preservation of conduction channel because of theSiNxdielectric layer, which may be explained by the interface bond of C-N. High voltage up to −200 V is applied to the device, and no breakdown is observed. For comparison, another traditional surface channel FET (SC-FET) is also fabricated.

scholarly journals Passive Detection and Imaging of Human Body Radiation Using an Uncooled Field-Effect Transistor-Based THz Detector

Sensors ◽  
2020 ◽  
Vol 20 (15) ◽  
pp. 4087 ◽  
Author(s):  
Dovilė Čibiraitė-Lukenskienė ◽  
Kęstutis Ikamas ◽  
Tautvydas Lisauskas ◽  
Viktor Krozer ◽  
Hartmut G. Roskos ◽  
...  
Keyword(s):  
Human Body ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Signal To Noise Ratio ◽  
Thermal Sensitivity ◽  
Scanning Speed ◽  
Frequency Range ◽  
Passive Imaging ◽  
Effect Transistor

This work presents, to our knowledge, the first completely passive imaging with human-body-emitted radiation in the lower THz frequency range using a broadband uncooled detector. The sensor consists of a Si CMOS field-effect transistor with an integrated log-spiral THz antenna. This THz sensor was measured to exhibit a rather flat responsivity over the 0.1–1.5-THz frequency range, with values of the optical responsivity and noise-equivalent power of around 40 mA/W and 42 pW/ Hz , respectively. These values are in good agreement with simulations which suggest an even broader flat responsivity range exceeding 2.0 THz. The successful imaging demonstrates the impressive thermal sensitivity which can be achieved with such a sensor. Recording of a 2.3 × 7.5-cm 2 -sized image of the fingers of a hand with a pixel size of 1 mm 2 at a scanning speed of 1 mm/s leads to a signal-to-noise ratio of 2 and a noise-equivalent temperature difference of 4.4 K. This approach shows a new sensing approach with field-effect transistors as THz detectors which are usually used for active THz detection.

Review of Recent Advances in Carbon Nanotube Biosensors Based on Field-Effect Transistors

Nano LIFE ◽  
2016 ◽  
Vol 06 (03n04) ◽  
pp. 1642006 ◽  
Author(s):  
Guangfeng Hou ◽  
Lu Zhang ◽  
Vianessa Ng ◽  
Zhizhen Wu ◽  
Mark Schulz
Keyword(s):  
Mass Production ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
High Strength ◽  
Device Fabrication ◽  
Physiochemical Properties ◽  
Recent Advances ◽  
Effect Transistor

The extraordinary physiochemical properties of carbon nanotubes (CNTs) stimulated their wide application in biosensing research. Nanotube characteristics of fast electron transport, large surface area, high strength, excellent catalytic activity and good chemical stability contribute to ultrasensitive, highly selective and stable CNT biosensors. Among the various CNT biosensors, the field-effect transistor (FET) architecture has received tremendous attention due to the advantages of high performance, miniaturization, and capability for mass production. In this paper, we address recent advances in the development of CNT biosensors based on FETs. The synthesis and properties of CNTs are discussed, along with their integration into biosensors. Recent progress in device fabrication, including CNT functionalization, attachment, and bioreceptor immobilization in CNT-based FET biosensors are highlighted. Examples in medical, food and environmental fields are illustrated.

scholarly journals Stencil mask defined doctor blade printing of organic single crystal array for high-performance organic field-effect transistors

2021 ◽  
Author(s):  
Yue Xi ◽  
Tao Wang ◽  
Qi Mu ◽  
Congcong Huang ◽  
Shuming Duan ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic P ◽  
Organic Field Effect Transistors ◽  
Stencil Mask ◽  
Organic Single Crystal ◽  
Effect Transistor ◽  
Amorphous Si

Organic field-effect transistor (OFET) is one of the promising candidates for next generation electronics due to its solution processability and good performance superior to amorphous Si devices. Patterning the organic...

scholarly journals Zn(ii) and Cu(ii) complexes of a new thiophene-based salphen-type ligand: solution-processable high-performance field-effect transistor materials

2014 ◽  
Vol 50 (53) ◽  
pp. 7036-7039 ◽  
Author(s):  
Ashish K. Asatkar ◽  
Satyaprasad P. Senanayak ◽  
Anjan Bedi ◽  
Snigdha Panda ◽  
K. S. Narayan ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Organic Field Effect Transistor ◽  
Solution Processed ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Organic field-effect transistor (OFET) devices based on solution-processed Cu(ii) and Zn(ii) complexes of a new thiophene-based salphen-type ligand exhibited high p-type mobilities (up to 1.5 cm2V−1s−1).

Realization of high-performance hetero-field-effect-transistor-type ultraviolet photosensors using p-type GaN comprising three-dimensional island crystals

2016 ◽  
Vol 55 (5S) ◽  
pp. 05FJ07 ◽  
Author(s):  
Yuma Yamamoto ◽  
Akira Yoshikawa ◽  
Toshiki Kusafuka ◽  
Toshiki Okumura ◽  
Motoaki Iwaya ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Three Dimensional ◽  
Effect Transistor ◽  
P Type

2-Positional pyrene end-capped oligothiophenes for high performance organic field effect transistors

2016 ◽  
Vol 52 (26) ◽  
pp. 4800-4803 ◽  
Author(s):  
Kazuaki Oniwa ◽  
Hiromasa Kikuchi ◽  
Hidekazu Shimotani ◽  
Susumu Ikeda ◽  
Naoki Asao ◽  
...  
Keyword(s):  
Single Crystal ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Central Unit ◽  
Organic Field Effect Transistors ◽  
Crystal Field Effect ◽  
Effect Transistor

A new co-oligomer BPy2T with two 2-positional pyrenes as terminal groups and bithiophene as a central unit showed a high hole mobility of 3.3 cm2 V−1 s−1 in a single crystal field effect transistor.

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