scholarly journals Microwave scattering parameters of ferro-nano-carbon–composites for tracking range countermeasures

2022 ◽  
Author(s):  
Ashwini P Alegaonkar ◽  
Himanshu Baskey ◽  
Prashant S. Alegaonkar

Ditching radar seekers at a microwave tracking range is of utmost tactical importance which could be realized by developing insight into designing an effective electromagnetic interference (EMI) shield. We report...

2010 ◽  
Vol 168-170 ◽  
pp. 1021-1024
Author(s):  
Guo Xuan Xiong ◽  
Zhi Bin Zhang ◽  
Min Deng ◽  
Yu Fen Zhou

The cement-based composite shielding materials filled with carbon materials such as ordinary carbon materials (graphite, coke and carbon black), carbon fiber and nano-carbon materials (carbon nano-tube and nano-carbon black) were prepared. The relationship of conductivity and shielding effectiveness in a frequency range of 100 KHz~1.5 GHz was studied. The electric properties of cement-based composites filled with carbon fiber is better than other carbon materials. With the contents of carbon fiber of 5.vol%, the average shielding effectiveness is about 37 dB and the maximum shielding effectiveness reaches 40 dB.


2019 ◽  
Author(s):  
D. A. Boqizoda ◽  
A. F. Zatsepin ◽  
E. A. Buntov ◽  
A. I. Slesarev ◽  
R. A. Parulin ◽  
...  

1995 ◽  
Vol 31 (20) ◽  
pp. 1756-1757 ◽  
Author(s):  
L.J. Auchterlonie ◽  
P.N. Fletcher

RSC Advances ◽  
2016 ◽  
Vol 6 (31) ◽  
pp. 26406-26411 ◽  
Author(s):  
Liping Fan ◽  
Xin Tan ◽  
Tao Yu ◽  
Zhiqiang Shi

Li4Ti5O12/hollow graphitized nano-carbon composites (LTO/HGCs) have been synthesized by a hydrothermal reaction using hollow graphitized nano-carbon as a conductive agent, and the composites were calcined at 750 °C for 12 h.


Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 549
Author(s):  
Mohammad Abdul Alim ◽  
Christophe Gaquiere ◽  
Giovanni Crupi

Presently, growing attention is being given to the analysis of the impact of the ambient temperature on the GaN HEMT performance. The present article is aimed at investigating both DC and microwave characteristics of a GaN-based HEMT versus the ambient temperature using measured data, an equivalent-circuit model, and a sensitivity-based analysis. The tested device is a 0.15-μm ultra-short gate-length AlGaN/GaN HEMT with a gate width of 200 μm. The interdigitated layout of this device is based on four fingers, each with a length of 50 μm. The scattering parameters are measured from 45 MHz to 50 GHz with the ambient temperature varied from −40 °C to 150 °C. A systematic study of the temperature-dependent performance is carried out by means of a sensitivity-based analysis. The achieved findings show that by the heating the transistor, the DC and microwave performance are degraded, due to the degradation in the electron transport properties.


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