Z-axis differential silicon-on-insulator resonant accelerometer with high sensitivity

2011 ◽  
Vol 6 (7) ◽  
pp. 519 ◽  
Author(s):  
Yanlong Shang ◽  
Junbo Wang ◽  
Sheng Tu ◽  
Lei Liu ◽  
Deyong Chen
Keyword(s):  
High Sensitivity ◽  
Silicon On Insulator ◽  
Resonant Accelerometer

scholarly journals Towards lab-on-chip ultrasensitive ethanol detection using photonic crystal waveguide operating in the mid infrared

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Ali Rostamian ◽  
Ehsan Madadi-Kandjani ◽  
Hamed Dalir ◽  
Volker J. Sorger ◽  
Ray T. Chen
Keyword(s):  
Photonic Crystal ◽  
Slow Light ◽  
High Sensitivity ◽  
Guided Wave ◽  
Silicon On Insulator ◽  
Group Index ◽  
Photonic Crystal Waveguide ◽  
Mid Infrared ◽  
Lab On Chip ◽  
On Chip

Abstract Thanks to the unique molecular fingerprints in the mid-infrared spectral region, absorption spectroscopy in this regime has attracted widespread attention in recent years. Contrary to commercially available infrared spectrometers, which are limited by being bulky and cost-intensive, laboratory-on-chip infrared spectrometers can offer sensor advancements including raw sensing performance in addition to use such as enhanced portability. Several platforms have been proposed in the past for on-chip ethanol detection. However, selective sensing with high sensitivity at room temperature has remained a challenge. Here, we experimentally demonstrate an on-chip ethyl alcohol sensor based on a holey photonic crystal waveguide on silicon on insulator-based photonics sensing platform offering an enhanced photoabsorption thus improving sensitivity. This is achieved by designing and engineering an optical slow-light mode with a high group-index of n g  = 73 and a strong localization of modal power in analyte, enabled by the photonic crystal waveguide structure. This approach includes a codesign paradigm that uniquely features an increased effective path length traversed by the guided wave through the to-be-sensed gas analyte. This PIC-based lab-on-chip sensor is exemplary, spectrally designed to operate at the center wavelength of 3.4 μm to match the peak absorbance for ethanol. However, the slow-light enhancement concept is universal offering to cover a wide design-window and spectral ranges towards sensing a plurality of gas species. Using the holey photonic crystal waveguide, we demonstrate the capability of achieving parts per billion levels of gas detection precision. High sensitivity combined with tailorable spectral range along with a compact form-factor enables a new class of portable photonic sensor platforms when combined with integrated with quantum cascade laser and detectors.

scholarly journals Microelectromechanical Resonant Accelerometer Designed with a High Sensitivity

Sensors ◽  
2015 ◽  
Vol 15 (12) ◽  
pp. 30293-30310 ◽  
Author(s):  
Jing Zhang ◽  
Yan Su ◽  
Qin Shi ◽  
An-Ping Qiu
Keyword(s):  
High Sensitivity ◽  
Resonant Accelerometer

scholarly journals Compact Inner-Wall Grating Slot Microring Resonator for Label-Free Sensing

Sensors ◽  
2019 ◽  
Vol 19 (22) ◽  
pp. 5038 ◽  
Author(s):  
Hongjun Gu ◽  
He Gong ◽  
Chunxue Wang ◽  
Xiaoqiang Sun ◽  
Xibin Wang ◽  
...  
Keyword(s):  
Refractive Index ◽  
Sodium Chloride ◽  
High Sensitivity ◽  
Microring Resonator ◽  
Silicon On Insulator ◽  
Label Free ◽  
Detection Range ◽  
Sodium Chloride Solutions ◽  
Sensing Application ◽  
Index Unit

In this paper, we present and analyze a compact inner-wall grating slot microring resonator (IG-SMRR) with the footprint of less than 13 μm × 13 μm on the silicon-on-insulator (SOI) platform for label-free sensing, which comprises a slot microring resonator (SMRR) and inner-wall grating (IG). Its detection range is significantly enhanced without the limitation of the free spectral region (FSR) owing to the combination of SMRR and IG. The IG-SMRR has an ultra-large quasi-FSR of 84.5 nm as the detection range, and enlarged factor is up to over 3 compared with the conventional SMRR. The concentration sensitivities of sodium chloride solutions and D-glucose solutions are 996.91 pm/% and 968.05 pm/%, respectively, and the corresponding refractive index (RI) sensitivities are 559.5 nm/RIU (refractive index unit) and 558.3 nm/RIU, respectively. The investigation on the combination of SMRR and IG is a valuable exploration of label-free sensing application for ultra-large detection range and ultra-high sensitivity in future.

Cascaded silicon-on-insulator double-ring sensors operating in high-sensitivity transverse-magnetic mode

2013 ◽  
Vol 38 (8) ◽  
pp. 1349 ◽  
Author(s):  
Xianxin Jiang ◽  
Junjun Ye ◽  
Jun Zou ◽  
Mingyu Li ◽  
Jian-Jun He
Keyword(s):  
High Sensitivity ◽  
Transverse Magnetic ◽  
Silicon On Insulator ◽  
Transverse Magnetic Mode ◽  
Double Ring ◽  
Magnetic Mode

scholarly journals Transferable micromachined piezoresistive force sensor with integrated double-meander-spring system

2017 ◽  
Vol 6 (1) ◽  
pp. 121-133 ◽  
Author(s):  
Gerry Hamdana ◽  
Maik Bertke ◽  
Lutz Doering ◽  
Thomas Frank ◽  
Uwe Brand ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
High Reliability ◽  
Three Dimensional ◽  
High Sensitivity ◽  
Force Sensor ◽  
Silicon On Insulator ◽  
Basic Material ◽  
Inductively Coupled ◽  
Sensor Properties ◽  
Micro Force Sensor

Abstract. A developed transferable micro force sensor was evaluated by comparing its response with an industrially manufactured device. In order to pre-identify sensor properties, three-dimensional (3-D) sensor models were simulated with a vertically applied force up to 1000 µN. Then, controllable batch fabrication was performed by alternately utilizing inductively coupled plasma (ICP) reactive ion etching (RIE) and photolithography. The assessments of sensor performance were based on sensor linearity, stiffness and sensitivity. Analysis of the device properties revealed that combination of a modest stiffness value (i.e., (8.19 ± 0.07) N m−1) and high sensitivity (i.e., (15.34 ± 0.14) V N−1) at different probing position can be realized using a meander-spring configuration. Furthermore, lower noise voltage is obtained using a double-layer silicon on insulator (DL-SOI) as basic material to ensure high reliability and an excellent performance of the sensor.

scholarly journals A Small and High Sensitivity Resonant Accelerometer

2009 ◽  
Vol 1 (1) ◽  
pp. 536-539 ◽  
Author(s):  
D. Pinto ◽  
D. Mercier ◽  
C. Kharrat ◽  
E. Colinet ◽  
V. Nguyen ◽  
...  
Keyword(s):  
High Sensitivity ◽  
Resonant Accelerometer

Modeling of Nonlinear Stiffness of Micro-Resonator in Silicon Resonant Accelerometer

2013 ◽  
Vol 562-565 ◽  
pp. 374-379
Author(s):  
Zhang Jing ◽  
Shao Dong Jiang ◽  
An Ping Qiu
Keyword(s):  
Nonlinear Vibration ◽  
Maximum Error ◽  
Silicon On Insulator ◽  
Equivalent Model ◽  
Nonlinear Stiffness ◽  
Resonant Beam ◽  
Micro Resonator ◽  
Resonant Accelerometer ◽  
The Impact ◽  
Elastic Constraint

Nonlinearities of the resonator in silicon resonant accelerometer (SRA) limit the ultimate short term frequency stability. In SRA, this stability is a measure of the achievable resolution. This paper discusses the nonlinear vibration phenomenon of micro-resonator considering the impact of the entire structure of SRA and builds a model to calculate the micro-resonator nonlinear stiffness K3,eff of the SRA prototype. The dies of SRA were fabricated by Silicon on Insulator (SOI) process. The equivalent model of the micro-resonator is built and the analytical value of the elastic constraint stiffness Ka of micro-resonator is derived as 8.91×104 N/m. It is calculated that K3,eff is equal to 5×1011 N/m3,and as a comparison, the simulation result is 5.026×1011 N/m3. The error between them is 0.52%. The nonlinear vibration experiments show that the maximum error between the theoretical and experimental value of resonance frequency is 2.1%. The prediction for the nonlinear stiffness contributes to further research on nonlinear vibration of the resonant beam. The model in this paper could also provide guidance and reference for optimal design of SRA.

Performance of a silicon-on-insulator direct electron detector in a low-voltage transmission electron microscope

Microscopy ◽  
2020 ◽  
Author(s):  
Takafumi Ishida ◽  
Akira Shinozaki ◽  
Makoto Kuwahara ◽  
Toshinobu Miyoshi ◽  
Koh Saitoh ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
High Efficiency ◽  
Low Voltage ◽  
Direct Detection ◽  
High Sensitivity ◽  
Silicon On Insulator ◽  
Modulation Transfer ◽  
Electron Detector ◽  
Transmission Electron

Abstract The performance of a direct electron detector using silicon-on-insulator (SOI) technology in a low-voltage transmission electron microscope (LVTEM) is evaluated. The modulation transfer function and detective quantum efficiency of the detector are measured under backside illumination. The SOI-type detector is demonstrated to have high sensitivity and high efficiency for the direct detection of low-energy electrons. The detector is thus considered suitable for low-dose imaging in an LVTEM.

scholarly journals Nonlinear Optics in Silicon Wire Waveguides: Towards Integrated Long Wavelength Light Sources

2012 ◽  
Vol 1437 ◽  
Author(s):  
Bart Kuyken ◽  
Xiaoping Liu ◽  
Richard M. Osgood ◽  
Roel Baets ◽  
Gunther Roelkens ◽  
...  
Keyword(s):  
Nonlinear Optics ◽  
Silicon Nanowire ◽  
Wavelength Region ◽  
High Sensitivity ◽  
Silicon On Insulator ◽  
Light Sources ◽  
Absorption Bands ◽  
Central Wavelength ◽  
Mid Infrared ◽  
Long Wavelength

ABSTRACTMost of the research on silicon-on-insulator integrated circuits has been focused on applications for telecommunication. By using the large refractive index of silicon, compact complex photonic functions have been integrated on a silicon chip. However, the transparency of silicon up to 8.5 μm enables the use of the platform for the mid infrared wavelength region, albeit limited by the absorption in silicon oxide from 4 μm on. This could lead to a whole new set of integrated photonics circuits for sensing, given the distinct absorption bands of many molecules in this wavelength region. These long wavelength integrated photonic circuits would preferably need broadband or widely tunable sources to probe these absorption bands.We propose the use of nonlinear optics in silicon wire waveguides to generate light in this wavelength range. Nonlinear interactions in just a few cm of silicon wire waveguides can be very efficient as a result of both the high nonlinear index of silicon and the high optical confinement obtained in these waveguides. We demonstrate the generation of a supercontinuum spanning from 1.53 μm up to 2.55 μm in a 2 cm dispersion engineered silicon nanowire waveguide by pumping the waveguide with strong picoseconds pulses at 2.12 μm [1]. Furthermore we demonstrate broadband nonlinear optical amplification in the mid infrared up to 50 dB [2] in these silicon waveguides. By using this broadband parametric gain a silicon-based synchronously pumped optical parametric oscillator (OPO) is constructed [3]. This OPO is tunable over 70 nm around a central wavelength of 2080 nm.Finally, we also demonstrate the use of higher order dispersion terms to get phase matching between optical signals at very different optical frequencies in silicon wire waveguides. In this way we demonstrate conversion of signals at 2.44 μm to the telecommunication band with efficiencies up to +19.5 dB [4]. One particularly attractive application of such wide conversion is the possibility of converting weak signals in the mid-IR to the telecom window after which they can be detected by a high-sensitivity telecom-band optical receiver.

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