scholarly journals The use of convex lens as primary concentrator for multi-junction solar cells

2018 ◽  
Vol 2 ◽  
pp. 5
Author(s):  
Juan Paolo Lorenzo Gerardo Barrios ◽  
John Raffy Cortez ◽  
Gene Michael Herman ◽  
Aris Larroder ◽  
Bernice Mae Yu Jeco ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Output Power ◽  
Fresnel Lens ◽  
Lens System ◽  
Junction Solar Cell ◽  
Convex Lens

A concentrator lens system was designed for a multi-junction solar cell, CDO-100-C3MJ, with an added feature − a convex lens was added above the Fresnel lens in order to improve the output power of the setup and reduce the need for the use of solar trackers. The convex lens setup was tested with the Fresnel lens setup over a 3-day photoperiod by measuring the voltage, current, irradiance, and temperature at every hour. The results showed that the convex lens setup produced 1.94% more power, but only at around midday. The increase in power is due to the convex lens that focuses a greater amount of irradiance on the solar cell over the course of the day.

scholarly journals The III–V Triple-Junction Solar Cell Characteristics and Optimization with a Fresnel Lens Concentrator

2018 ◽  
Vol 2018 ◽  
pp. 1-10
Author(s):  
Yin Guo ◽  
Qibing Liang ◽  
Bifen Shu ◽  
Jing Wang ◽  
Qingchuan Yang
Keyword(s):  
Solar Cell ◽  
Output Power ◽  
Triple Junction ◽  
Focal Plane ◽  
Incident Light ◽  
Simulation Method ◽  
Fresnel Lens ◽  
Junction Solar Cell ◽  
Simulation Results ◽  
Cell Circuit

At present, the Fresnel lens are commonly used as the condenser in high-concentrating photovoltaic (HCPV) modules. It is ideally believed that the output power of a III–V triple-junction solar cell which is placed on the focal plane of a Fresnel lens is the largest, because the intensity of the sunlight on the focal plane is the largest. Actually, according to our work, the dispersion of sunlight through a Fresnel lens and the nonparallelism and divergence of the incident light will lead to changes in the spectrum and the homogeneity of illumination, and cause a drop of the solar cell output. In this paper, the influence of the dispersion and nonparallel incidence of the light on the output of a triple-junction solar cell at different positions near the focal plane were theoretically studied, combined with the light-tracing simulation method and triple-junction solar cell circuit network model. The results show that the III–V triple-junction solar cell has the highest output power in both sides of the focal plane positions. The output power can be increased by about 15% after being optimized. The simulation results were verified by the experiments.

scholarly journals Evaluation the Performance of CPV with Different Concentration Ratio

2019 ◽  
Vol 20 (5) ◽  
pp. 23-34
Author(s):  
Alaa H. Shneishil ◽  
Emad J. Mahdi ◽  
Mohammed A. Hantosh
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Output Power ◽  
Solar Irradiance ◽  
Concentration Ratio ◽  
Cooling System ◽  
Low Cost ◽  
Fresnel Lens ◽  
Effect Of Temperature ◽  
Solar Cell Performance

The present work aims at decrease the cost of the photovoltaic (PV) solar system by decreasing the area of expensive solar cells by low cost optical concentrators that give the same output power. Output power of two types’ monocrystalline and polycrystalline silicon solar cells has been measured with and without presence of linear focus Fresnel lenses (FL) with different concentration ratios. Cooling system has been used to decrease the effect of temperature on solar cell performance. The results indicated that the increase in the output power is about 5.3 times by using Fresnel lens concentrator without using cooling system in comparison with solar cell without concentrator, while it is about 14.6 times by using cooling system. The efficiency of monocrystalline solar cell without cooling system is about 11.2% for solar irradiance 0.698 kW/m2, this value decrease to 3.3% for solar irradiance 12.4 kW/m2 and concentration ratio 17.7 by using Fresnel lens concentrator, while when using cooling system the efficiency enhance to 12.9% and 8.8% for solar irradiance 0.698 and 12.4, respectively.

scholarly journals Исследование концентраторных фотоэлектрических модулей с каскадными солнечными элементами

2021 ◽  
Vol 91 (9) ◽  
pp. 1419
Author(s):  
Е.А. Ионова ◽  
Н.Ю. Давидюк ◽  
Н.А. Садчиков ◽  
А.В. Андреева
Keyword(s):  
Computer Simulation ◽  
Solar Cells ◽  
Solar Cell ◽  
Triple Junction ◽  
Fresnel Lens ◽  
Internal Resistance ◽  
Solar Simulator ◽  
Junction Solar Cell ◽  
The Impact ◽  
Radiation Conversion

To study concentrator photovoltaic modules with GaInP/GaInAs/Ge triple-junction solar cells we used the measurement capabilities of a solar simulator accompanied by a computer simulation. The comparison of values of parameters for a module, Fresnel lens and triple-junction solar cell, obtained both experimentally and computed by means of the computer simulation, demonstrated good matching of results and high precision of calculations using the software. This allows to use both methods simultaneously to explain processes of radiation conversion in the system concentrator–solar cell and predict the values of module parameters under various external focusing conditions. The utilization of both methods revealed the impact of lateral currents on the total photo current of solar cells inside a module. For the system Fresnel lens–multi-junction solar cell we determined the possible cases of power loses associated with internal resistance of the cells. Output parameters of the module under varying spectrum of incoming radiation has been calculated using software.

scholarly journals GaInP/GaAs/poly-Si Multi-Junction Solar Cells by in Metal Balls Bonding

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 726
Author(s):  
Ray-Hua Horng ◽  
Yu-Cheng Kao ◽  
Apoorva Sood ◽  
Po-Liang Liu ◽  
Wei-Cheng Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Low Temperature ◽  
Triple Junction ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Metal Line ◽  
Solar Simulator ◽  
Junction Solar Cell

In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.

The Fabrication and Photoelectric Properties of the Nanopillar Arrays for Solar Cell

2011 ◽  
Vol 694 ◽  
pp. 375-379 ◽  
Author(s):  
Jing Liu ◽  
Yuan Xun Liao ◽  
Bo Wang ◽  
Fu Ting Yi
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Output Power ◽  
Inductively Coupled Plasma ◽  
Incident Angle ◽  
Electric Energy ◽  
Average Diameter ◽  
Light Spectrum ◽  
Aspect Ratios ◽  
Photoelectric Properties

a method combining Csesium Chloride (CsCl) self-assembly and inductively coupled plasma (ICP) etching has been used to fabricate nanopillars with high aspect ratio structures on sillicon wafer. The silicon surface with nanopillars of average diameter 350nm and aspect ratios 4, like black wafer, has very low reflectivity at a width of light spectrum. After diffusion of phosphorus (P) and passivation of SiO2 layer on the pillars surface, the reflectivity has been reduced more to below 3% for wavelength from 400nm to 800nm, which could meet the requirement of antireflection for solar cells. What’s more, the reflectivity of nanopillar surface could not obey the formula of reflection to increase with the incident angle of light like planar, and has almost unchanged small values at incident angle of 10°-50°. The solar cell with nanopillars has been fabricated with thermal diffusion of P, chemical deposion of Cu electrode with UV lithography. Its I×V output power of photoelectric property has been measured with sunlight at different time in one day corresponding to different incident angle, and measure of common solar cell is done at the same time for comparation. In order to select the inflection factor of incident angle, the data of output power have been united by dividing max value for nanopillar and common solar cells individually. The united curve of nanopillars cell shows obviously larger value than that of common cell at above incident angle of about 15°, which means nanopillars cell could have the potential ability to offer more electric energy production daily than that of common solar cell.

scholarly journals The Effect of Noise-Induced Quantum Coherence in the Intermediate Band Solar Cells

2021 ◽  
Author(s):  
Mohsen Daryani ◽  
Ali Rostami ◽  
Gaffar Darvish ◽  
Mohammad Kazem Morravej Farshi
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Output Power ◽  
Quantum Coherence ◽  
Maximum Output Power ◽  
Maximum Output ◽  
Incoherent Light ◽  
Intermediate Band ◽  
Intermediate Band Solar Cells ◽  
Coherence Effect

Abstract It has been shown that quantum coherence induced by incoherent light can increase the efficiency of solar cells. Here we evaluate the effect of such coherence in the intermediate band solar cells. We first examine a six-level quantum IBSC model and demonstrate by simulation that the maximum of output power in a solar cell with quantum structure increases more than 16 percent in the case of coherence existence. We then propose an IBSC model which can absorb continuous spectra of sunlight and show that the quantum coherence can increase the output power of the cell. For instance, calculations indicate that the coherence makes an increase of about 31% in the maximum output power of a cell that the width of the conduction and intermediate bands are 100 and 10 meV, respectively. Also, our calculations show that the quantum coherence effect is still observed in increasing the solar cell power by expanding the width of the conduction band, although the output power is reduced due to increase in the thermalization loss. However, expanding the width of the intermediate band reduces the coherence effect.

scholarly journals Mathematical Modelling of a Novel Hetero-junction Dual SIS ZnO-Si-SnO Solar Cell

2021 ◽  
Author(s):  
Kaustuv Dasgupta ◽  
Utpal Gangopadhyay ◽  
Anup Mondal ◽  
Soma Ray
Keyword(s):  
Mathematical Model ◽  
Solar Cells ◽  
Solar Cell ◽  
Schottky Barrier ◽  
Inversion Layer ◽  
Semiconductor Layer ◽  
Back Side ◽  
Thermal Budget ◽  
Junction Solar Cell ◽  
Mathematical Justification

Abstract For the last few decades scientists across the world have achieved significant improvement in performance of conventional silicon p-n junction solar cell. Sophisticated high temperature doping technology is unavoidable in the fabrication of these conventional solar cells. Back in 1970s scientists proposed an alternative solar cell technology with Schottky barrier which can cut down the burden on thermal budget of manufacturing process. Later the metal-semiconductor Schottky barrier further modified with hetero junction semiconductor-semiconductor solar cells. A thin intrinsic layer sandwiched between semiconductor-semiconductor junctions can repair the junction defect efficiently. These SIS solar cells became popular for its low thermal budget and considerable efficiency. In this paper we have tried to propose a mathematical model of a novel dual side SIS solar cell which is basically a multi junction solar cell. We have introduced a third semiconductor layer (SnO) at the back side of the cell which can provide an inversion layer much similar to PERT solar cell. This structure is first of its kind and thus a theoretical analysis is required before implementation. We have studied the effect of this back field on the performance of the cell and propose a mathematical model based on reciprocity theorem of charge collection. The efficiency of conventional ZnO-pSi SIS solar cell was computed ~ 5.2% while the back SnO p+ layer is expected to enhance the efficiency up to ~ 7.9% according to our mathematical model. We have concluded with significant mathematical justification to implement this structure with proposed electro-chemical experiments.

scholarly journals Switching of current modes in a concentrator multi-junction solar cell due to the Fresnel lens chromatic aberration

2020 ◽  
Author(s):  
Maxim Z. Shvarts ◽  
Mariia V. Nakhimovich ◽  
Evgeniya A. Ionova ◽  
Nikolay Yu. Davidyuk ◽  
Andrey A. Soluyanov
Keyword(s):  
Solar Cell ◽  
Chromatic Aberration ◽  
Fresnel Lens ◽  
Junction Solar Cell

scholarly journals Effect of p-Layer and i-Layer Properties on the Electrical Behaviour of Advanced a-Si:H/a-SiGe:H Thin Film Solar Cell from Numerical Modeling Prospect

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Peyman Jelodarian ◽  
Abdolnabi Kosarian
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Current Density ◽  
Doping Concentration ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Maximum Efficiency ◽  
Junction Solar Cell ◽  
Double Junction

The effect of p-layer and i-layer characteristics such as thickness and doping concentration on the electrical behaviors of the a-Si:H/a-SiGe:H thin film heterostructure solar cells such as electric field, photogeneration rate, and recombination rate through the cell is investigated. Introducing Ge atoms to the Si lattice in Si-based solar cells is an effective approach in improving their characteristics. In particular, current density of the cell can be enhanced without deteriorating its open-circuit voltage. Optimization shows that for an appropriate Ge concentration, the efficiency of a-Si:H/a-SiGe solar cell is improved by about 6% compared with the traditional a-Si:H solar cell. This work presents a novel numerical evaluation and optimization of amorphous silicon double-junction (a-Si:H/a-SiGe:H) thin film solar cells and focuses on optimization of a-SiGe:H midgap single-junction solar cell based on the optimization of the doping concentration of the p-layer, thicknesses of the p-layer and i-layer, and Ge content in the film. Maximum efficiency of 23.5%, with short-circuit current density of 267 A/m2and open-circuit voltage of 1.13 V for double-junction solar cell has been achieved.

Low Cost Electro-Deposition of Cuprous Oxide P-N Homo-Junction Solar Cell

2013 ◽  
Vol 827 ◽  
pp. 38-43 ◽  
Author(s):  
Faiz Arith ◽  
S.A.M. Anis ◽  
Muzalifah Mohd Said ◽  
Cand M. Idzdihar Idris
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Indium Tin Oxide ◽  
Low Cost ◽  
Electrical Energy ◽  
Deposition Process ◽  
Crystal Silicon ◽  
Electro Deposition ◽  
Junction Solar Cell ◽  
P Type

Most of the photovoltaic industry uses wafer of single-crystal and poly-crystal silicon as a material of their photovoltaic (PV) modules. However, the cost of these modules is high due to the material and processing cost. Cuprous oxides (Cu2O) have several features that suitable for future photovoltaic applications. Cu2O can be prepared with simple methods at very low cost. Cu2O p-n homojunction solar cell is a device that converts sunlight to electrical energy, consists of two similar materials for its p-n junction, which is Cu2O. The p-type and n-type of Cu2O thin films are then fabricated to produce solar cells. Other layers aluminium and glass substrate coated with indium tin oxide (ITO) need to be added as a contact for electrons movement. In this study, p-type Cu2O, n-type Cu2O and p-n junction are prepared in order to become accustomed for solar cell applications. To achieve the optimum deposition conditions, p-n junction solar cell is prepared by two-steps electrochemical deposition process. The result from x-ray diffraction (XRD) shows that the peak is dominated by CuO (1, 1, 1). P-n junction is in between the p-type and n-type of Cu2O layer. Al has the thickness of 427.5nm. The second and the third layer are p and n type of Cu2O, which have the thickness of 106.9nm and 92.3nm, respectively. Finally the thickness of ITO layer is 131.1nm.An absorption experiment at AM1 light is performed in order to get the I-V curves, and in fact, to study the electrical solar cells p-n homojunction. Based on I-V curve test, the level of energy conversion of cell is 0.00141% with fill factor, FF 0.94813 which proved that Cu2O p-n homojunction solar cell can be fabricated and produced at very low cost and well function.

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