Mathematical Modelling of a Novel Hetero-junction Dual SIS ZnO-Si-SnO Solar Cell

Abstract For the last few decades scientists across the world have achieved significant improvement in performance of conventional silicon p-n junction solar cell. Sophisticated high temperature doping technology is unavoidable in the fabrication of these conventional solar cells. Back in 1970s scientists proposed an alternative solar cell technology with Schottky barrier which can cut down the burden on thermal budget of manufacturing process. Later the metal-semiconductor Schottky barrier further modified with hetero junction semiconductor-semiconductor solar cells. A thin intrinsic layer sandwiched between semiconductor-semiconductor junctions can repair the junction defect efficiently. These SIS solar cells became popular for its low thermal budget and considerable efficiency. In this paper we have tried to propose a mathematical model of a novel dual side SIS solar cell which is basically a multi junction solar cell. We have introduced a third semiconductor layer (SnO) at the back side of the cell which can provide an inversion layer much similar to PERT solar cell. This structure is first of its kind and thus a theoretical analysis is required before implementation. We have studied the effect of this back field on the performance of the cell and propose a mathematical model based on reciprocity theorem of charge collection. The efficiency of conventional ZnO-pSi SIS solar cell was computed ~ 5.2% while the back SnO p+ layer is expected to enhance the efficiency up to ~ 7.9% according to our mathematical model. We have concluded with significant mathematical justification to implement this structure with proposed electro-chemical experiments.

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GaInP/GaAs/poly-Si Multi-Junction Solar Cells by in Metal Balls Bonding

Crystals ◽

10.3390/cryst11070726 ◽

2021 ◽

Vol 11 (7) ◽

pp. 726

Author(s):

Ray-Hua Horng ◽

Yu-Cheng Kao ◽

Apoorva Sood ◽

Po-Liang Liu ◽

Wei-Cheng Wang ◽

...

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Low Temperature ◽

Triple Junction ◽

Short Circuit ◽

Short Circuit Current ◽

Open Circuit ◽

Metal Line ◽

Solar Simulator ◽

Junction Solar Cell

In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.

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The use of convex lens as primary concentrator for multi-junction solar cells

Emergent Scientist ◽

10.1051/emsci/2018004 ◽

2018 ◽

Vol 2 ◽

pp. 5

Author(s):

Juan Paolo Lorenzo Gerardo Barrios ◽

John Raffy Cortez ◽

Gene Michael Herman ◽

Aris Larroder ◽

Bernice Mae Yu Jeco ◽

...

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Output Power ◽

Fresnel Lens ◽

Lens System ◽

Junction Solar Cell ◽

Convex Lens

A concentrator lens system was designed for a multi-junction solar cell, CDO-100-C3MJ, with an added feature − a convex lens was added above the Fresnel lens in order to improve the output power of the setup and reduce the need for the use of solar trackers. The convex lens setup was tested with the Fresnel lens setup over a 3-day photoperiod by measuring the voltage, current, irradiance, and temperature at every hour. The results showed that the convex lens setup produced 1.94% more power, but only at around midday. The increase in power is due to the convex lens that focuses a greater amount of irradiance on the solar cell over the course of the day.

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Effect of p-Layer and i-Layer Properties on the Electrical Behaviour of Advanced a-Si:H/a-SiGe:H Thin Film Solar Cell from Numerical Modeling Prospect

International Journal of Photoenergy ◽

10.1155/2012/946024 ◽

2012 ◽

Vol 2012 ◽

pp. 1-7 ◽

Cited By ~ 1

Author(s):

Peyman Jelodarian ◽

Abdolnabi Kosarian

Keyword(s):

Thin Film ◽

Solar Cells ◽

Solar Cell ◽

Current Density ◽

Doping Concentration ◽

Open Circuit Voltage ◽

Open Circuit ◽

Maximum Efficiency ◽

Junction Solar Cell ◽

Double Junction

The effect of p-layer and i-layer characteristics such as thickness and doping concentration on the electrical behaviors of the a-Si:H/a-SiGe:H thin film heterostructure solar cells such as electric field, photogeneration rate, and recombination rate through the cell is investigated. Introducing Ge atoms to the Si lattice in Si-based solar cells is an effective approach in improving their characteristics. In particular, current density of the cell can be enhanced without deteriorating its open-circuit voltage. Optimization shows that for an appropriate Ge concentration, the efficiency of a-Si:H/a-SiGe solar cell is improved by about 6% compared with the traditional a-Si:H solar cell. This work presents a novel numerical evaluation and optimization of amorphous silicon double-junction (a-Si:H/a-SiGe:H) thin film solar cells and focuses on optimization of a-SiGe:H midgap single-junction solar cell based on the optimization of the doping concentration of the p-layer, thicknesses of the p-layer and i-layer, and Ge content in the film. Maximum efficiency of 23.5%, with short-circuit current density of 267 A/m2and open-circuit voltage of 1.13 V for double-junction solar cell has been achieved.

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Low Cost Electro-Deposition of Cuprous Oxide P-N Homo-Junction Solar Cell

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.827.38 ◽

2013 ◽

Vol 827 ◽

pp. 38-43 ◽

Cited By ~ 3

Author(s):

Faiz Arith ◽

S.A.M. Anis ◽

Muzalifah Mohd Said ◽

Cand M. Idzdihar Idris

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Indium Tin Oxide ◽

Low Cost ◽

Electrical Energy ◽

Deposition Process ◽

Crystal Silicon ◽

Electro Deposition ◽

Junction Solar Cell ◽

P Type

Most of the photovoltaic industry uses wafer of single-crystal and poly-crystal silicon as a material of their photovoltaic (PV) modules. However, the cost of these modules is high due to the material and processing cost. Cuprous oxides (Cu2O) have several features that suitable for future photovoltaic applications. Cu2O can be prepared with simple methods at very low cost. Cu2O p-n homojunction solar cell is a device that converts sunlight to electrical energy, consists of two similar materials for its p-n junction, which is Cu2O. The p-type and n-type of Cu2O thin films are then fabricated to produce solar cells. Other layers aluminium and glass substrate coated with indium tin oxide (ITO) need to be added as a contact for electrons movement. In this study, p-type Cu2O, n-type Cu2O and p-n junction are prepared in order to become accustomed for solar cell applications. To achieve the optimum deposition conditions, p-n junction solar cell is prepared by two-steps electrochemical deposition process. The result from x-ray diffraction (XRD) shows that the peak is dominated by CuO (1, 1, 1). P-n junction is in between the p-type and n-type of Cu2O layer. Al has the thickness of 427.5nm. The second and the third layer are p and n type of Cu2O, which have the thickness of 106.9nm and 92.3nm, respectively. Finally the thickness of ITO layer is 131.1nm.An absorption experiment at AM1 light is performed in order to get the I-V curves, and in fact, to study the electrical solar cells p-n homojunction. Based on I-V curve test, the level of energy conversion of cell is 0.00141% with fill factor, FF 0.94813 which proved that Cu2O p-n homojunction solar cell can be fabricated and produced at very low cost and well function.

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Wide band gap Gallium Phosphide solar cells for multi-junction solar cell system

2010 35th IEEE Photovoltaic Specialists Conference ◽

10.1109/pvsc.2010.5616636 ◽

2010 ◽

Cited By ~ 2

Author(s):

Xuesong Lu ◽

Susan R. Huang ◽

Martin Diaz ◽

Robert L. Opila ◽

Allen Barnett

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Band Gap ◽

Gallium Phosphide ◽

Wide Band ◽

Cell System ◽

Wide Band Gap ◽

Junction Solar Cell

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Sintesa Titanium dioxide (TiO2) untuk Dye-Sensitized Solar Cell dengan Antosianin Bunga Rosella (Hibiscus sabdariffa)

INDONESIAN JOURNAL OF APPLIED PHYSICS ◽

10.13057/ijap.v3i02.1268 ◽

2016 ◽

Vol 3 (02) ◽

pp. 181

Author(s):

Elsa Ayu Adhitya ◽

Ari Handono Ramelan ◽

Suharyana S

Keyword(s):

Titanium Dioxide ◽

Solar Cells ◽

Solar Cell ◽

Anatase Phase ◽

High Surface ◽

Semiconductor Layer ◽

Dye Sensitized Solar Cell ◽

X Ray ◽

Dye Sensitized ◽

Dye Absorption

Synthesis of titanium dioxide (TiO2) for dye sensitized solar cell (DSSC) with anthocyanins rosella (Hibisccus Sabdariffa) has succesfully been done using sol-gel technique. The semiconductor layer is a very important part of the DSSC since it gives a high surface area for dye absorption which gives rise to high currents. DSSC was formed structually two electrodes sandwiching the electrolyte. The working electrode is TiO2 layer coating on a Fluorine doped Tin Oxide (FTO) glass substrat and sensitified with anthocyanin dye. A counter electrode is carbon coating on the FTO. The fabricated solar cells have an area of 1.5 cm2, soaked in the anthocyanin dye for 24 hours and 48 hours. The sample was characteriz with X-ray diffraction method. The X-ray diffractogram indicates that the sample possesses rutile and anatase phase. The dye absorption measured using spektrofotometer UV-Visible Lambda 25 showed the absorption occurs in the range 440-620 nm. The efficiencies of the solar cells measured by I-V meter Keithley for 24 and 48 hours soaking are 0.0064(6)%, and 0.0151(4)%, respectively.

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Simulation photoelectric parameters of vertical junction solar cells

International Journal of Advanced Trends in Computer Science and Engineering ◽

10.30534/ijatcse/2021/131022021 ◽

2021 ◽

Vol 10 (2) ◽

pp. 543-548

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Software Package ◽

Scientific Work ◽

Single Element ◽

Junction Solar Cell ◽

Physically Based

Many properties of the solar cells are being studied extensively. In this study, the basic photoelectric parameters of vertical junction solar cell were modeled. Attempts were made to approach the scientific work both physically and programmatically. In terms of programming, a perfect algorithm has been developed for modeling vertical junction solar cell in the Sentaurus TCAD software package. Using this algorithm, a vertical junction solar cell was modeled. The main focus was on the comparison of the photoelectric parameters of a vertical junction solar cell consisting of 3 elements with the photoelectric parameters of a vertical solar cell consisting of single element. The results obtained were physically based.

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Correlation of Hydrogen Dilution Profiling to Material Structure and Device Performance of Hydrogenated Nanocrystalline Silicon Solar Cells

MRS Proceedings ◽

10.1557/proc-1066-a03-03 ◽

2008 ◽

Vol 1066 ◽

Cited By ~ 21

Author(s):

Baojie Yan ◽

Guozhen Yue ◽

Yanfa Yan ◽

Chun-Sheng Jiang ◽

Charles W. Teplin ◽

...

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Cell Structure ◽

Nanocrystalline Silicon ◽

Cell Performance ◽

Solar Cell Performance ◽

Seeding Layer ◽

Single Junction ◽

Junction Solar Cell ◽

Hydrogen Dilution

ABSTRACTWe present a systematic study on the correlation of hydrogen dilution profiles to structural properties materials and solar cell performance in nc-Si:H solar cells. We deposited nc-Si:H single-junction solar cells using a modified very high frequency (VHF) glow discharge technique on stainless steel substrates with various profiles of hydrogen dilution in the gas mixture during deposition. The material properties were characterized using Raman spectroscopy, X-TEM, AFM, and C-AFM. The solar cell performance correlates well with the material structures. Three major conclusions are made based on the characterization results. First, the optimized nc-Si:H material does not show an incubation layer, indicating that the seeding layer is well optimized and works as per design. Second, the nanocrystalline evolution is well controlled by hydrogen dilution profiling in which the hydrogen dilution ratio is dynamically reduced during the intrinsic layer deposition. Third, the best nc-Si:H single-junction solar cell was made using a proper hydrogen dilution profile, which caused a nanocrystalline distribution close to uniform throughout the thickness, but with a slightly inverse nanocrystalline evolution. We have used the optimized hydrogen dilution profiling and improved the nc-Si:H solar cell performance significantly. As a result, we have achieved an initial active-area cell efficiency of 9.2% with a nc-Si:H single-junction structure, and 15.4% with an a-Si:H/a-SiGe:H/nc-Si:H triple-junction solar cell structure.

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Analysis of the Bowing Phenomenon for Thin c-Si Solar Cells using Partially Processed c-Si Solar Cells

Energies ◽

10.3390/en12091593 ◽

2019 ◽

Vol 12 (9) ◽

pp. 1593 ◽

Cited By ~ 2

Author(s):

Jong Rok Lim ◽

Sihan Kim ◽

Hyung-Keun Ahn ◽

Hee-Eun Song ◽

Gi Hwan Kang

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Firing Process ◽

Back Side ◽

Front Side ◽

Front Electrode ◽

Si Solar Cell ◽

Si Solar Cells ◽

Wafer Thickness ◽

The Relationship

The silicon wafers for solar cells on which the paste is deposited experience a bowing phenomenon. The thickness of commonly used c-Si wafers is 180 μm or more. When fabricating c-Si solar cells with this wafer thickness, the bowing value is 3 mm or less and the problem does not occur. However, for the thin c-Si solar cells which are being studied recently, the output reduction due to failure during manufacture and cracking are attributed to bowing. In generally, it is known that the bowing phenomenon arises mainly from the paste applied to the back side electrode of c-Si solar cells and the effects of SiNx (silicon nitride) and the paste on the front side are not considered significant. The bowing phenomenon is caused by a difference in the coefficient of expansion between heterogeneous materials, there is the effect of bowing on the front electrode and ARC. In this paper, a partially processed c-Si solar cell was fabricated and a bowing phenomenon variation according to the wafer thicknesses was confirmed. As a result of the experiment, the measured bow value after the firing process suggests that the paste on the front-side indicates a direction different from that of the back-side paste. The bow value increases when Al paste is deposited on SiNx. The fabricated c-Si solar cell was analyzed on basis of the correlation between the bowing phenomenon of the materials and the c-Si wafer using Stoney’s equation, which is capable of analyzing the relationship between bowing and stress. As a result, the bowing phenomenon of the c-Si solar cell estimated through the experiment that the back side electrode is the important element, but also the front electrode and ARC influence the bowing phenomenon when fabricating c-Si solar cells using thin c-Si wafers.

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N-I-P Micromorph Solar Cells on Aluminium Substrates

MRS Proceedings ◽

10.1557/proc-452-877 ◽

1996 ◽

Vol 452 ◽

Cited By ~ 5

Author(s):

M. Goetz ◽

P. Torres ◽

P. Pernet ◽

J. Meier ◽

D. Fischer ◽

...

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Amorphous Silicon ◽

Spectral Response ◽

Single Layer ◽

Antireflection Coating ◽

Microcrystalline Silicon ◽

Single Junction ◽

Junction Solar Cell ◽

Single Junction Solar Cell

AbstractThe first successful deposition of ‘micromorph’ silicon tandem solar cells of the n-i-p-n-i-p configuration is reported. In order to implement the ‘micromorph’ solar cell concept, four key elements had to be prepared: First, the deposition of mid-gap, intrinsic microcrystalline silicon (μc-Si:H) by the 'gas purifier method', second, the amorphous silicon (a-Si:H) n-i-p single junction solar cell, third, the microcrystalline silicon n-i-p single junction solar cell and fourth, the ability of depositing on aluminium sheet substrates.All the solar cells presented have been deposited on flat aluminium sheets, using a single layer antireflection coating to couple the light into the cell. It is shown, that this antireflection concept- together with a flat substrate- holds for amorphous single junction solar cells, but it reaches its limit with the extended range of spectral response of the ‘micromorph’ cell.The best initial efficiencies for each category of n-i-p cells on flat substrates were: 8.7% for the amorphous silicon single junction cell, 4.9% for the microcrystalline silicon single junction cell and 9.25% for the ‘micromorph’ tandem cell.

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