Scalability of Sulfur‐Based Ovonic Threshold Selectors for 3D Stackable Memory Applications

2021 ◽  
pp. 2100084
Author(s):  
Shujing Jia ◽  
Huanglong Li ◽  
Qi Liu ◽  
Zhitang Song ◽  
Min Zhu
Keyword(s):  
Memory Applications

Investigation of ferroelectrics using conventional and in situ electron microscopy

1994 ◽  
Vol 52 ◽  
pp. 586-587
Author(s):  
V. Saikumar ◽  
H. M. Chan ◽  
M. P. Harmer
Keyword(s):  
Nonvolatile Memory ◽  
Ferroelectric Materials ◽  
Gate Insulator ◽  
Sensors And Actuators ◽  
In Situ Electron Microscopy ◽  
Ferroelectric Domains ◽  
Domain Boundaries ◽  
Domain Interactions ◽  
Memory Applications

In recent years, there has been a growing interest in the application of ferroelectric thin films for nonvolatile memory applications and as a gate insulator in DRAM structures. In addition, bulk ferroelectric materials are also widely used as components in electronic circuits and find numerous applications in sensors and actuators. To a large extent, the performance of ferroelectric materials are governed by the ferroelectric domains (with dimensions in the micron to sub-micron range) and the switching of domains in the presence of an applied field. Conventional TEM studies of ferroelectric domains structures, in conjunction with in-situ studies of the domain interactions can aid in explaining the behavior of ferroelectric materials, while providing some answers to the mechanisms and processes that influence the performance of ferroelectric materials. A few examples from bulk and thin film ferroelectric materials studied using the TEM are discussed below.Figure 1 shows micrographs of ferroelectric domains obtained from undoped and Fe-doped BaTiO3 single crystals. The domain boundaries have been identified as 90° domains with the boundaries parallel to <011>.

SOT and STT-Based 4-Bit MRAM Cell for High-Density Memory Applications

2021 ◽  
pp. 1-7
Author(s):  
Arshid Nisar ◽  
Seema Dhull ◽  
Sparsh Mittal ◽  
Brajesh Kumar Kaushik
Keyword(s):  
High Density ◽  
Memory Applications

scholarly journals Internal constraints and arrested relaxation in main-chain nematic elastomers

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Takuya Ohzono ◽  
Kaoru Katoh ◽  
Hiroyuki Minamikawa ◽  
Mohand O. Saed ◽  
Eugene M. Terentjev
Keyword(s):  
Mechanical Properties ◽  
Main Chain ◽  
Polymer Networks ◽  
Nematic Order ◽  
Nematic Elastomers ◽  
Nematic Director ◽  
Highly Nonlinear ◽  
Nonlinear Mechanical ◽  
Liquid Crystal Elastomers ◽  
Memory Applications

AbstractNematic liquid crystal elastomers (N-LCE) exhibit intriguing mechanical properties, such as reversible actuation and soft elasticity, which manifests as a wide plateau of low nearly-constant stress upon stretching. N-LCE also have a characteristically slow stress relaxation, which sometimes prevents their shape recovery. To understand how the inherent nematic order retards and arrests the equilibration, here we examine hysteretic stress-strain characteristics in a series of specifically designed main-chain N-LCE, investigating both macroscopic mechanical properties and the microscopic nematic director distribution under applied strains. The hysteretic features are attributed to the dynamics of thermodynamically unfavoured hairpins, the sharp folds on anisotropic polymer strands, the creation and transition of which are restricted by the nematic order. These findings provide a new avenue for tuning the hysteretic nature of N-LCE at both macro- and microscopic levels via different designs of polymer networks, toward materials with highly nonlinear mechanical properties and shape-memory applications.

scholarly journals On Some Unique Specificities of Ge‐Rich GeSbTe Phase‐Change Material Alloys for Nonvolatile Embedded‐Memory Applications

2021 ◽  
Vol 15 (3) ◽  
pp. 2170015
Author(s):  
Minh Anh Luong ◽  
Marta Agati ◽  
Nicolas Ratel Ramond ◽  
Jérémie Grisolia ◽  
Yannick Le Friec ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Embedded Memory ◽  
Memory Applications ◽  
Change Material

scholarly journals Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 301
Author(s):  
Young Jin Choi ◽  
Jihyun Kim ◽  
Min Je Kim ◽  
Hwa Sook Ryu ◽  
Han Young Woo ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Memory Device ◽  
Non Volatile Memory ◽  
Device Applications ◽  
Donor Acceptor ◽  
Effect Transistor ◽  
Volatile Memory ◽  
Memory Applications

Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-effect transistor and non-volatile memory applications. As-synthesized PDPPT-TT was simply spin-coated on a substrate for the device fabrications. The PDPPT-TT based field-effect transistor showed ambipolar electrical transfer characteristics. Furthermore, a gold nanoparticle-embedded dielectric layer was used as a charge trapping layer for the non-volatile memory device applications. The non-volatile memory device showed clear memory window formation as applied gate voltage increases, and electrical stability was evaluated by performing retention and cycling tests. In summary, we demonstrate that a donor–acceptor-type organic semiconductor molecule shows great potential for ambipolar field-effect transistors and non-volatile memory device applications as an important class of materials.

scholarly journals Dimensional transformation of chemical bonding during crystallization in a layered chalcogenide material

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yuta Saito ◽  
Shogo Hatayama ◽  
Yi Shuang ◽  
Paul Fons ◽  
Alexander V. Kolobov ◽  
...  
Keyword(s):  
Chemical Bonding ◽  
Crystalline Phase ◽  
Three Dimensional ◽  
Atomic Layer ◽  
Unusual Behavior ◽  
Weakly Bound ◽  
Covalently Bonded ◽  
Non Volatile Memory ◽  
Device Applications ◽  
Memory Applications

AbstractTwo-dimensional (2D) van der Waals (vdW) materials possess a crystal structure in which a covalently-bonded few atomic-layer motif forms a single unit with individual motifs being weakly bound to each other by vdW forces. Cr2Ge2Te6 is known as a 2D vdW ferromagnetic insulator as well as a potential phase change material for non-volatile memory applications. Here, we provide evidence for a dimensional transformation in the chemical bonding from a randomly bonded three-dimensional (3D) disordered amorphous phase to a 2D bonded vdW crystalline phase. A counterintuitive metastable “quasi-layered” state during crystallization that exhibits both “long-range order and short-range disorder” with respect to atomic alignment clearly distinguishes the system from conventional materials. This unusual behavior is thought to originate from the 2D nature of the crystalline phase. These observations provide insight into the crystallization mechanism of layered materials in general, and consequently, will be useful for the realization of 2D vdW material-based functional nanoelectronic device applications.

scholarly journals Ab initio molecular dynamics and materials design for embedded phase-change memory

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Liang Sun ◽  
Yu-Xing Zhou ◽  
Xu-Dong Wang ◽  
Yu-Han Chen ◽  
Volker L. Deringer ◽  
...  
Keyword(s):  
Phase Change ◽  
High Performance ◽  
Materials Design ◽  
Atomic Scale ◽  
Ab Initio Molecular Dynamics ◽  
Core Material ◽  
Structure Property ◽  
Switching Speed ◽  
Atomic Structures ◽  
Memory Applications

AbstractThe Ge2Sb2Te5 alloy has served as the core material in phase-change memories with high switching speed and persistent storage capability at room temperature. However widely used, this composition is not suitable for embedded memories—for example, for automotive applications, which require very high working temperatures above 300 °C. Ge–Sb–Te alloys with higher Ge content, most prominently Ge2Sb1Te2 (‘212’), have been studied as suitable alternatives, but their atomic structures and structure–property relationships have remained widely unexplored. Here, we report comprehensive first-principles simulations that give insight into those emerging materials, located on the compositional tie-line between Ge2Sb1Te2 and elemental Ge, allowing for a direct comparison with the established Ge2Sb2Te5 material. Electronic-structure computations and smooth overlap of atomic positions (SOAP) similarity analyses explain the role of excess Ge content in the amorphous phases. Together with energetic analyses, a compositional threshold is identified for the viability of a homogeneous amorphous phase (‘zero bit’), which is required for memory applications. Based on the acquired knowledge at the atomic scale, we provide a materials design strategy for high-performance embedded phase-change memories with balanced speed and stability, as well as potentially good cycling capability.

Sign in / Sign up

Export Citation Format

Share Document