scholarly journals A Copper Oxide (CuO) Thin Films Deposited by Spray Pyrolysis Method

2019 ◽  
Vol 253 ◽  
pp. 03002 ◽  
Author(s):  
Youcef Bellal ◽  
Antar Bouhank ◽  
Hacene Serrar ◽  
Tunç Tüken ◽  
Gökmen Sığırcık
Keyword(s):  
Thin Films ◽  
Copper Oxide ◽  
Spray Pyrolysis ◽  
Visible Region ◽  
Spray Pyrolysis Method ◽  
X Ray Diffraction ◽  
Monoclinic Crystal ◽  
Equal Concentration ◽  
X Ray ◽  
Glass Substrates

A simple and low-cost procedure (spray pyrolysis) was used to elaborate a copper oxide thin films on ordinary glass substrates. A copper nitrate was used and dissolved in two different solutions (Water, Methanol) S1 and S2 respectively in order to obtain an equal concentration; CS1,S2=0.5M. The spray pyrolysis deposition made at fixed temperature T=500°C and different volumes of S1 or S2 on the glass substrates. The X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-vis spectrophotometry were used to determinate the structural, morphological and optical properties of CuO thin films. The X-ray diffraction patterns confirm the presence of the polycrystalline phase of CuO as monoclinic crystal structure with preferential orientation along (110), (002), (111), (200) and (020). Their optical band gaps ranged from 3.95 to 4.02eV for thin films made with S1, and from 1.6 to 1.95eV for thin films made with S2 with a high absorbency in the visible region, which is in agreement with the values of the literature.

Growth and characterization of spray pyrolysis via deposited Copper oxide thin film

2018 ◽  
Vol 1 (2) ◽  
pp. 9-12
Author(s):  
S.P. Soundararajan ◽  
M Murugan ◽  
K Mohanraj ◽  
Babu Balraj ◽  
Tamiloli Devendhiran
Keyword(s):  
Thin Films ◽  
Copper Oxide ◽  
Spray Pyrolysis ◽  
Spray Pyrolysis Technique ◽  
Oxide Thin Film ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nebulizer Spray Pyrolysis ◽  
Jet Nebulizer

In this work the copper oxide thin films have been coated using Jet nebulizer spray pyrolysis technique. The prepared CuO thin films were characterized by various techniques such as X-ray diffraction (XRD), Scanning Electron Microscope (SEM) and Energy dispersive X-ray spectroscopy (EDX) techniques, in order to study its crystalline nature, particle size and the band gap respectively.

Effects of Annealing on the Properties of Copper Oxide Thin Films

2015 ◽  
Vol 819 ◽  
pp. 189-192
Author(s):  
Dewi Suriyani Che Halin ◽  
Ibrahim Abu Talib ◽  
Abdul Razak Daud ◽  
Muhammad Azmi Abd Hamid
Keyword(s):  
Thin Films ◽  
Copper Oxide ◽  
Spin Coating ◽  
Sol Gel ◽  
Cupric Chloride ◽  
X Ray Diffraction ◽  
Oxide Coatings ◽  
X Ray ◽  
Glass Substrates ◽  
Different Temperatures

Thin films of copper oxide were successively deposited on glass substrates by sol-gel like spin coating for 40 s and annealed in air at different temperatures (200-400°C). Precursor solutions were prepared by dissolving cupric chloride in methanol. Various stabilizers and additives were used to enhance the solubility of cupric chloride and to improve the adhesion between the films and the glass substrates. Glucopone was used as a surfactant to reduce the surface energy. The evolution of oxide coatings under thermal treatment was studied by glancing incidence X-ray diffraction and scanning electron microscopy. Annealing the films in air at 300°C converts the films to CuO. The general appearances of the films were uniform and brownish in color.

Relationship between Structure and Functional Properties of the ZnO:Al Thin Films

2011 ◽  
Vol 675-677 ◽  
pp. 1275-1278 ◽  
Author(s):  
Hong Yun Yue ◽  
Ai Min Wu ◽  
Juan Hu ◽  
Xue Yu Zhang ◽  
Ting Ju Li
Keyword(s):  
Thin Films ◽  
Electrical Property ◽  
Light Transmission ◽  
Visible Region ◽  
Structure Parameter ◽  
X Ray Diffraction ◽  
Working Pressure ◽  
X Ray ◽  
Glass Substrates ◽  
Sputtering Power

ZnO:Al thin films were deposited on glass substrates by r. f. magnetron sputtering. The crystal structures were characterized using X-ray diffraction. The electrical property and the light transmission of the ZnO:Al thin films were investigates utilizing Hall system and UV/Vis/NIR spectrophotometer. The results show that the ZnO:Al thin films prepared with the sputtering power of 100W, working pressure of 0.3Pa and substrate temperature of 250°C have the resistivity as low as 3.1×10-3Ω⋅cm and transmittance over 90% in visible region. From the GIXRD patterns, higher electrical conductivity is related to the higher ratio of I2 (103)/I(002), which is a new reasonable structure parameter to estimate the electrical property of ZnO:Al thin films.

scholarly journals Electrical and Structural properties of Copper Oxide (CuO) thin films on Plastic substrate deposited by spray pyrolysis technique

2019 ◽  
Vol 7 (2) ◽  
pp. 14-18 ◽  
Author(s):  
Mohammad G. Faraj ◽  
Askander K. Kaka ◽  
Halo D. Omar
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Substrate Temperature ◽  
Copper Oxide ◽  
Hall Effect ◽  
Spray Pyrolysis ◽  
Spray Pyrolysis Technique ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hall Effect Measurements

In this paper, copper oxide (CuO) thin films were deposited on polyimide (PI) Plastic substrates with spray pyrolysis technique with different temperatures (i.e. 250–300 °C). All the deposited films were characterized by X-ray diffraction (XRD) and Hall Effect measurements for the Structural and electrical properties. Effects of substrate temperature on the structural and electrical characteristics of the films were studied. The X-ray diffraction patterns’ results reveal that the all of CuO films have a face centered cubic structure. The crystallite grain size was calculated using Scherrer formula and it is found that the substrate temperature (300 0C) has maximum crystallite grain size (81.2 nm). Hall Effect measurements showed that all the films are of p-type conductivity. Depending on the substrate temperature, Hall measurement showed that the electrical resistivity and the carrier concentration varied in the range 77.4 Ω.cm to 52.7 Ω.cm and  6.3 x1015 cm-3 to  10.1 x1015 cm-3.

CHARACTERIZATION OF CuO THIN FILMS DEPOSITION ON POROUS SILICON BY SPRAY PYROLYSIS

2016 ◽  
Vol 23 (05) ◽  
pp. 1650044 ◽  
Author(s):  
KHAWLA S. KHASHAN ◽  
AZHAR I. HASSAN ◽  
ALI J. ADDIE
Keyword(s):  
Thin Films ◽  
Porous Silicon ◽  
Spray Pyrolysis ◽  
Optical Measurement ◽  
Visible Range ◽  
Spray Pyrolysis Method ◽  
X Ray Diffraction ◽  
Monoclinic Crystal ◽  
Monoclinic Crystal Structure ◽  
Atomic Force

CuO thin films on porous silicon (PSi) substrates were prepared via spray pyrolysis method. The structural, optical and electrical properties of the films and the heterojunctions were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM) and UV-Vis spectrophotometer. XRD results show that the film is polycrystalline and have a monoclinic crystal structure. Optical measurement indicates that the films had a low transmittance at the visible range and an optical bandgap of 2.2[Formula: see text]eV. High rectification was achieved with a maximum photoresponsivity of about 0.59[Formula: see text]A/W at 400[Formula: see text]nm, so that the CuO/PSi heterojunction may act as a good candidate for the fabrication of an efficient photodiode.

scholarly journals Influence of Different Annealing Atmosphere Nature on the Properties of Nanoparticles CdS Thin Films Synthesized By Chemical Bath Method.

2021 ◽  
Author(s):  
M. MELOUKI ◽  
Y. LARBAH ◽  
A. DJELLOUL ◽  
M. ADNANE
Keyword(s):  
Thin Films ◽  
Visible Region ◽  
Thin Layers ◽  
Annealing Atmosphere ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Cds Thin Film ◽  
Cds Thin Films ◽  
Cbd Method

Abstract The Cadmium sulfide (CdS) is the most advantageous material for the manufacture of the elaborate solar cells in thin layers, the study that we present, will relate to the elaborated and the characterization of CdS thin film deposited on glass substrates by chemical bath deposition (CBD) method. This study will help us to know if the annealing atmosphere nature affects the deposition of thin films of CdS. The X-ray diffraction (XRD) analysis reveals that the structures of pure thin films are Hexagonal and polycrystalline with preferential orientation (002). The scanning electron microscopy (SEM) measurements showed that the surface morphology homogeneous and uniform. The energy dispersive X-ray analysis (EDAX) studies confirmed that the films are nearly stoichiometric. The transmittance in the visible region (200-800 nm) is high of 60%, and band gap values oscillated between 2.36 and 2.47 eV for al thin films.

X- ray diffraction and dielectric properties of PbSe thin films

2019 ◽  
Vol 15 (34) ◽  
pp. 1-14
Author(s):  
Bushra A. Hasan
Keyword(s):  
Thin Films ◽  
Thermal Activation ◽  
Thermal Evaporation ◽  
Thermal Activation Energy ◽  
Dielectric Constants ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates

Lead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite size increases while the dislocation density decreases with thickness increasing. A.C conductivity, dielectric constants, and loss tangent are studied as function to thickness, frequency (10kHz-10MHz) and temperatures (293K-493K). The conductivity measurements confirm confirmed that hopping is the mechanism responsible for the conduction process. Increasing of thickness decreases the thermal activation energy estimated from Arhinus equation is found to decrease with thickness increasing. The increase of thickness lead to reduce the polarizability α while the increasing of temperature lead to increase α.

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

Effect of Substrate Temperature on the Electrochromic Properties of Cobalt Hydroxide Thin Films Prepared by Reactive Sputtering

2011 ◽  
Vol 1328 ◽  
Author(s):  
KyoungMoo Lee ◽  
Yoshio Abe ◽  
Midori Kawamura ◽  
Hidenobu Itoh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Large Change ◽  
Amorphous Structure ◽  
Cobalt Hydroxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Substrate Temperatures

ABSTRACTCobalt hydroxide thin films with a thickness of 100 nm were deposited onto glass, Si and indium tin oxide (ITO)-coated glass substrates by reactively sputtering a Co target in H2O gas. The substrate temperature was varied from -20 to +200°C. The EC performance of the films was investigated in 0.1 M KOH aqueous solution. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy of the samples indicated that Co3O4 films were formed at substrate temperatures above 100°C, and amorphous CoOOH films were deposited in the range from 10 to -20°C. A large change in transmittance of approximately 26% and high EC coloration efficiency of 47 cm2/C were obtained at a wavelength of 600 nm for the CoOOH thin film deposited at -20°C. The good EC performance of the CoOOH films is attributed to the low film density and amorphous structure.

Optoelectronic Properties of Fluorine and Cobalt Co-Doped Tin Oxide Thin Films Deposited by Chemical Spray Pyrolysis

2019 ◽  
Vol 60 ◽  
pp. 63-75 ◽  
Author(s):  
Naoual Houaidji ◽  
Mejda Ajili ◽  
Baghdadi Chouial ◽  
Najoua Turki Kamoun ◽  
Kenza Kamli ◽  
...  
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Carrier Concentration ◽  
Tin Oxide ◽  
Hall Mobility ◽  
Spray Pyrolysis Method ◽  
Chemical Spray Pyrolysis ◽  
Glass Substrates ◽  
Chemical Spray ◽  
Co Doped

Transparent conducting Cobalt-fluorine co-doped tin oxide (SnO2: (Co, F)) thin filmswere deposited onto preheated glass substrates using the chemical spray pyrolysis method. The ([Co2+]/[Sn4+]) atomic concentration ratio (y)in the spray solution was varied between 0 and 5 at. %. The structural, electrical, optical and photoluminescence properties of these films were studied. It is found that the thin films are polycrystalline with a tetragonal crystal structure corresponding to SnO2 phase having a preferred orientation along the (200) plane. Transmission and reflection spectra reveal the presence of interference fringes indicating thickness uniformity and surface homogeneity of the deposited thin films. The electrical resistivity (ρ), volume carrier concentration density (Nv), surface carrier concentration density (Ns) and Hall mobility (μ) of the synthesized thin films were determined from the Hall Effect measurements in the Van der Paw-configuration and the following results were obtained: n-type conductivity in all deposited films, a low resistivity of 1.16×10-2 Ω.cm, and a high Hall mobility of 15.13×102 cm2.V-1.s-1with Co concentration equals to 3 at. %. These results show that the electrical properties of these thin films where greatly improved making them suitable as ohmic contact in photovoltaic application devices.

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