Characterization of a GaAs/AlGaAs modulation‐doped dynamic random access memory cell

1992 ◽  
Vol 61 (7) ◽  
pp. 834-836 ◽  
Author(s):  
J. S. Kleine ◽  
J. A. Cooper ◽  
M. R. Melloch
Keyword(s):  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Access Memory

Analysis of Grain Boundary Dependent Memory Characteristics in Poly-Si One-Transistor Dynamic Random-Access Memory

2021 ◽  
Vol 21 (8) ◽  
pp. 4216-4222
Author(s):  
Songyi Yoo ◽  
In-Man Kang ◽  
Sung-Jae Cho ◽  
Wookyung Sun ◽  
Hyungsoon Shin
Keyword(s):  
Strong Electric Field ◽  
Memory Performance ◽  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Thin Body ◽  
Memory Cells ◽  
Access Memory ◽  
Memory Characteristics

A capacitorless one-transistor dynamic random-access memory cell with a polysilicon body (poly-Si 1T-DRAM) has a cost-effective fabrication process and allows a three-dimensional stacked architecture that increases the integration density of memory cells. Also, since this device uses grain boundaries (GBs) as a storage region, it can be operated as a memory cell even in a thin body device. GBs are important to the memory characteristics of poly-Si 1T-DRAM because the amount of trapped charge in the GBs determines the memory’s data state. In this paper, we report on a statistical analysis of the memory characteristics of poly-Si 1T-DRAM cells according to the number and location of GBs using TCAD simulation. As the number of GBs increases, the sensing margin and retention time of memory cells deteriorate due to increasing trapped electron charge. Also, “0” state current increases and memory performance degrades in cells where all GBs are adjacent to the source or drain junction side in a strong electric field. These results mean that in poly-Si 1T-DRAM design, the number and location of GBs in a channel should be considered for optimal memory performance.

Reliability and Characterization of Composite Oxide/Nitride Dielectrics for Multi‐Megabit Dynamic Random Access Memory Stacked Capacitors

1991 ◽  
Vol 138 (7) ◽  
pp. 2052-2057 ◽  
Author(s):  
P. C. Fazan ◽  
A. Ditali ◽  
C. H. Dennison ◽  
H. E. Rhodes ◽  
H. C. Chan ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Access Memory ◽  
Composite Oxide

Deposition and Electrical Characterization of Very ThinSrTiO3Films for Ultra Large Scale Integrated Dynamic Random Access Memory Application

1995 ◽  
Vol 34 (Part 1, No. 9B) ◽  
pp. 5178-5183 ◽  
Author(s):  
Cheol Seong Hwang ◽  
Soon Oh Park ◽  
Chang Seok Kang ◽  
Hag-Ju Cho ◽  
Ho-Kyu Kang ◽  
...  
Keyword(s):  
Large Scale ◽  
Random Access ◽  
Electrical Characterization ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Access Memory

Capacitorless Dynamic Random Access Memory Cell with Highly Scalable Surrounding Gate Structure

2007 ◽  
Vol 46 (4B) ◽  
pp. 2143-2147 ◽  
Author(s):  
Hoon Jeong ◽  
Yeun Seung Lee ◽  
Sangwoo Kang ◽  
Il Han Park ◽  
Woo Young Choi ◽  
...  
Keyword(s):  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Access Memory ◽  
Gate Structure ◽  
Surrounding Gate
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