Device Design of p+/n+and n+/p+/n+Gate Bulk Fin Field Effect Transistors with Source/Drain to Gate Underlap for Sub-40 nm Dynamic Random Access Memory Cell Transistors
2013 ◽
Vol 52
(4S)
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pp. 04CD08
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Keyword(s):
Keyword(s):
2014 ◽
Vol 53
(4S)
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pp. 04ED05
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Keyword(s):
2020 ◽
Vol 29
(01n04)
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pp. 2040010
2021 ◽
Vol 21
(8)
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pp. 4216-4222
2018 ◽
Vol 18
(9)
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pp. 5919-5924
Keyword(s):
2017 ◽
Vol 17
(5)
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pp. 2906-2911
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2008 ◽
Vol 96
(1)
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pp. 69-74
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