Doping gas effects on plasma enhanced chemical vapor deposition on heavily phosphorus-doped n+silicon film

1997 ◽  
Vol 71 (19) ◽  
pp. 2821-2823 ◽  
Author(s):  
Yue Kuo
Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.


Author(s):  
Meric Firat ◽  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
Maria Recaman Payo ◽  
Filip Duerinckx ◽  
Rajiv Sharma ◽  
...  

2001 ◽  
Vol 40 (Part 1, No. 1) ◽  
pp. 44-48 ◽  
Author(s):  
Haiping Liu ◽  
Sughoan Jung ◽  
Yukihiro Fujimura ◽  
Chisato Fukai ◽  
Hajime Shirai ◽  
...  

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