Publisher's Note: “Thermal stability of the HfO2∕SiO2 interface for sub-0.1 μm complementary metal-oxide-semiconductor gate oxide stacks: A valence band and quantitative core-level study by soft x-ray photoelectron spectroscopy” [J. Appl. Phys. 96, 6362 (2004)]

Gate Oxide ◽

Oxide Semiconductor ◽

X Ray ◽

Thermal stability of the HfO2∕SiO2 interface for sub-0.1μm complementary metal-oxide-semiconductor gate oxide stacks: A valence band and quantitative core-level study by soft x-ray photoelectron spectroscopy

Journal of Applied Physics ◽

10.1063/1.1809769 ◽

2004 ◽

Vol 96 (11) ◽

pp. 6362-6369 ◽

Cited By ~ 36

Author(s):

N. Barrett ◽

O. Renault ◽

J.-F. Damlencourt ◽

F. Martin

Keyword(s):

Thermal Stability ◽

Metal Oxide ◽

Valence Band ◽

Gate Oxide ◽

Oxide Semiconductor ◽

X Ray ◽

Thermal stability of electrical and structural properties of GaAs-based metal-oxide-semiconductor capacitors with an amorphous LaAlO3 gate oxide

Applied Physics Letters ◽

10.1063/1.2952830 ◽

2008 ◽

Vol 93 (1) ◽

pp. 012903 ◽

Cited By ~ 14

Author(s):

S. Koveshnikov ◽

C. Adamo ◽

V. Tokranov ◽

M. Yakimov ◽

R. Kambhampati ◽

...

Keyword(s):

Thermal Stability ◽

Metal Oxide ◽

Structural Properties ◽

Gate Oxide ◽

Oxide Semiconductor ◽

Interface characterization of a metal-oxide-semiconductor structure by biased X-ray photoelectron spectroscopy

Surface and Interface Analysis ◽

10.1002/sia.3154 ◽

2010 ◽

Vol 42 (2) ◽

pp. 70-76 ◽

Cited By ~ 1

Author(s):

M. Yoshitake ◽

K. Ohmori ◽

T. Chikyow

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor Structure

Semiconductor Structure ◽

Oxide Semiconductor ◽

X Ray ◽

Interface Characterization ◽

WE-G-204-04: Focal Spot Deblurring For High Resolution Amorphous Selenium (aSe) Complementary Metal Oxide Semiconductor (CMOS) X-Ray Detector

Medical Physics ◽

10.1118/1.4926088 ◽

2015 ◽

Vol 42 (6Part40) ◽

pp. 3694-3694

Author(s):

S Setlur Nagesh ◽

R Rana ◽

M Russ ◽

C Ionita ◽

D Bednarek ◽

...

Keyword(s):

High Resolution ◽

Metal Oxide ◽

Focal Spot ◽

Amorphous Selenium ◽

Oxide Semiconductor ◽

X Ray

Improvement of Thermal Stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge Metal–Oxide–Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02ba02 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BA02

Author(s):

Hong-Sik Shin ◽

Se-Kyung Oh ◽

Min-Ho Kang ◽

Hyuk-Min Kwon ◽

Jungwoo Oh ◽

...

Keyword(s):

Thermal Stability ◽

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Oxide Semiconductor ◽

Work function thermal stability of RuO2-rich Ru–Si–O p-channel metal-oxide-semiconductor field-effect transistor gate electrodes

Journal of Applied Physics ◽

10.1063/1.2901016 ◽

2008 ◽

Vol 103 (7) ◽

pp. 073702 ◽

Cited By ~ 4

Author(s):

M. Ťapajna ◽

A. Rosová ◽

E. Dobročka ◽

V. Štrbík ◽

Š. Gaži ◽

...

Keyword(s):

Thermal Stability ◽

Metal Oxide ◽

Work Function ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Gate Electrodes ◽

Effect Transistor ◽

Electrical Properties of 4H-Silicon Carbide Complementary Metal–Oxide–Semiconductor Devices with Wet-Processed Gate Oxide

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c087 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C087 ◽

Cited By ~ 6

Author(s):

Mitsuo Okamoto ◽

Tsutomu Yatsuo ◽

Kenji Fukuda ◽

Hajime Okumura

Keyword(s):

Silicon Carbide ◽

Electrical Properties ◽

Metal Oxide ◽

Semiconductor Devices ◽

Gate Oxide ◽

Oxide Semiconductor

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Combining and matching optical, electron-beam, and x-ray lithographies in the fabrication of Si complementary metal–oxide–semiconductor circuits with 0.1 and sub-0.1 μm features

10.1116/1.588257 ◽

1995 ◽

Vol 13 (6) ◽

pp. 2741 ◽

Cited By ~ 5

Author(s):

Isabel Y. Yang

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

Oxide Semiconductor ◽

X Ray ◽

Optical Electron ◽

Semiconductor Circuits

Effect of Wet Etched Thickness and Reoxidation on Reliability of Dual Gate Oxide for Sub-Quarter Micron Complementary Metal-Oxide-Semiconductor Devices

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.2167 ◽

2000 ◽

Vol 39 (Part 1, No. 4B) ◽

pp. 2167-2171 ◽

Cited By ~ 1

Author(s):

Ihl Hyun Cho ◽

Nag Kyunn Sung ◽

Jong Hyuk Oh ◽

Min Soo Park ◽

Dong Kyun Sohn ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Gate Oxide ◽

Oxide Semiconductor ◽

Dual Gate

Role of Interfacial Nitrogen on the High-Field Reliability of NO-Grown SiO2/6H-SiC Metal-Oxide-Semiconductor Devices: An X-Ray Photoelectron Spectroscopy Study

Advanced Science Engineering and Medicine ◽

10.1166/asem.2014.1608 ◽

2014 ◽

Vol 6 (9) ◽

pp. 1020-1023

Author(s):

C. Chakraborty ◽

C. Bose ◽

S. Chakraborty ◽

P. T. Lai

Keyword(s):

Metal Oxide ◽

High Field ◽

Semiconductor Devices ◽

Oxide Semiconductor ◽

Spectroscopy Study ◽

X Ray ◽

Field Reliability