Demonstration of undoped quaternary AlInGaN∕GaN heterostructure field-effect transistor on sapphire substrate

2005 ◽  
Vol 86 (22) ◽  
pp. 223510 ◽  
Author(s):  
Y. Liu ◽  
H. Jiang ◽  
S. Arulkumaran ◽  
T. Egawa ◽  
B. Zhang ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Gan Heterostructure

Improvement of AlGaN/GaN Heterostructure Field Effect Transistor Characteristics by Using Two-Step Ohmic Contact Process

2003 ◽  
Vol 42 (Part 1, No. 4B) ◽  
pp. 2309-2312 ◽  
Author(s):  
Dong-Hyun Cho ◽  
Mitsuaki Shimizu ◽  
Toshihide Ide ◽  
Byoungrho Shim ◽  
Hajime Okumura
Keyword(s):  
Ohmic Contact ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Contact Process ◽  
Effect Transistor ◽  
Gan Heterostructure

On an Electroless Plating (EP)-Based Pd/AlGaN/GaN Heterostructure Field-Effect Transistor (HFET)-Type Hydrogen Gas Sensor

2012 ◽  
Vol 33 (6) ◽  
pp. 788-790 ◽  
Author(s):  
Chien-Chang Huang ◽  
Huey-Ing Chen ◽  
Tai-You Chen ◽  
Chi-Shiang Hsu ◽  
Chun-Chia Chen ◽  
...  
Keyword(s):  
Gas Sensor ◽  
Electroless Plating ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Hydrogen Gas ◽  
Effect Transistor ◽  
Gan Heterostructure

scholarly journals Growth and Device Performance of AlGaN/GaN Heterostructure with AlSiC Precoverage on Silicon Substrate

2014 ◽  
Vol 2014 ◽  
pp. 1-6
Author(s):  
Jae-Hoon Lee ◽  
Jung-Hee Lee
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Film Growth ◽  
Drain Current ◽  
Device Performance ◽  
Wetting Layer ◽  
Si Substrate ◽  
Effect Transistor ◽  
Gan Heterostructure

A crack-free AlGaN/GaN heterostructure was grown on 4-inch Si (111) substrate with initial dot-like AlSiC precoverage layer. It is believed that introducing the AlSiC layer between AlN wetting layer and Si substrate is more effective in obtaining a compressively stressed film growth than conventional Al precoverage on Si surface. The metal semiconductor field effect transistor (MESFET), fabricated on the AlGaN/GaN heterostructure grown with the AlSiC layer, exhibited normally on characteristics, such as threshold voltage of −2.3 V, maximum drain current of 370 mA/mm, and transconductance of 124 mS/mm.

Photo-Electrochemical Gate Recess Etching for the Fabrication of AlGaN/GaN Heterostructure Field Effect Transistor

2001 ◽  
Vol 40 (Part 2, No. 3A) ◽  
pp. L198-L200 ◽  
Author(s):  
Jae-Seung Lee ◽  
Jong-Wook Kim ◽  
Doo-Chan Jung ◽  
Chang-Seok Kim ◽  
Won-Sang Lee ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Gan Heterostructure ◽  
Gate Recess
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