The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation

Journal of Applied Physics ◽

10.1063/1.2978360 ◽

2008 ◽

Vol 104 (6) ◽

pp. 064111 ◽

Author(s):

W. J. Maeng ◽

Hyungjun Kim

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Layer Deposition

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Improvement in Mobility and Negative-Bias Temperature Instability in Metal–Oxide–Semiconductor Field-Effect Transistors with Atomic-Layer-Deposited Si–Nitride/SiO2Stack Dielectrics

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.1874 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 1874-1878 ◽

Author(s):

Shiyang Zhu ◽

Anri Nakajima ◽

Takuo Ohashi ◽

Hideharu Miyake

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Compact In-Situ Sensors for Monitoring Negative-Bias-Temperature-Instability Effect and Oxide Degradation

2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers ◽

10.1109/isscc.2008.4523231 ◽

2008 ◽

Author(s):

E. Karl ◽

P. Singh ◽

D. Blaauw ◽

D. Sylvester

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

Oxide Degradation ◽

Instability Effect ◽

In Situ Sensors

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New Multi-stages – Hydrogen Diffusion Model for Negative Bias Temperature Instability

Journal of Nano- and Electronic Physics ◽

10.21272/jnep.11(4).04018 ◽

2019 ◽

Vol 11 (4) ◽

pp. 04018-1-04018-6

Author(s):

M. Mallati ◽

◽

H. Bentarzi ◽

Keyword(s):

Diffusion Model ◽

Hydrogen Diffusion ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-k Gate Stacks

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796094 ◽

2008 ◽

Author(s):

Tibor Grasser ◽

Ben Kaczer ◽

Thomas Aichinger ◽

Wolfgang Goes ◽

Michael Nelhiebel

Keyword(s):

Driving Force ◽

Negative Bias ◽

Gate Stacks ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Thermally Activated ◽

Bias Temperature Instability ◽

Hole Trapping ◽

High K ◽

Defect Creation

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A novel Negative Bias Temperature Instability model for nanoscale Finfet

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2009.5232688 ◽

2009 ◽

Author(s):

Chenyue Ma ◽

Bo Li ◽

Frank He ◽

Xing Zhang ◽

Xinnan Lin

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Spin dependent recombination study of the atomic-scale effects of fluorine on the negative bias temperature instability

2009 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2009.5173396 ◽

2009 ◽

Author(s):

J.T. Ryan ◽

P.M. Lenahan ◽

A.T. Krishnan ◽

S. Krishnan ◽

J.P. Campbell

Keyword(s):

Scale Effects ◽

Atomic Scale ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) ◽

10.1109/iedm.2001.979649 ◽

2002 ◽

Author(s):

C.H. Liu ◽

M.T. Lee ◽

Chih-Yung Lin ◽

J. Chen ◽

K. Schruefer ◽

...

Keyword(s):

Gate Dielectrics ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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The Impact of Nitrogen Engineering in Silicon Oxynitride Gate Dielectric on Negative-Bias Temperature Instability of p-MOSFETs: A Study by Ultrafast On-The-Fly $I_{\rm DLIN}$ Technique

IEEE Transactions on Electron Devices ◽

10.1109/ted.2008.923524 ◽

2008 ◽

Vol 55 (7) ◽

pp. 1630-1638 ◽

Author(s):

Vrajesh D. Maheta ◽

Christopher Olsen ◽

Khaled Ahmed ◽

Souvik Mahapatra

Keyword(s):

Gate Dielectric ◽

Silicon Oxynitride ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

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SiO2 Atomic Layer Deposition Using Tris(dimethylamino)silane and Hydrogen Peroxide Studied by in Situ Transmission FTIR Spectroscopy

The Journal of Physical Chemistry C ◽

10.1021/jp806638e ◽

2009 ◽

Vol 113 (19) ◽

pp. 8249-8257 ◽

Author(s):

B. B. Burton ◽

S. W. Kang ◽

S. W. Rhee ◽

S. M. George

Keyword(s):

Hydrogen Peroxide ◽

Atomic Layer Deposition ◽

Ftir Spectroscopy ◽

Atomic Layer ◽

Layer Deposition

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Impact of negative bias temperature instability on digital circuit reliability

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) ◽

10.1109/relphy.2002.996644 ◽

2003 ◽

Author(s):

V. Reddy ◽

A.T. Krishnan ◽

A. Marshall ◽

J. Rodriguez ◽

S. Natarajan ◽

...

Keyword(s):

Digital Circuit ◽

Negative Bias ◽

Circuit Reliability ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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