Hot-carrier effects on the scattering parameters of lightly doped drain n-type metal–oxide–semiconductor field effect transistors

Oxide Semiconductor ◽

Scattering Parameters ◽

Hot Carrier ◽

Hot Carrier Effects ◽

Lightly Doped Drain

Hot-carrier effects on the scattering parameters of lightly doped drain n-type metal-oxide-semiconductor field effect transistor

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581022 ◽

1998 ◽

Vol 16 (2) ◽

pp. 855-859 ◽

Cited By ~ 2

Author(s):

W. S. Kwan ◽

M. J. Deen

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Scattering Parameters ◽

Hot Carrier ◽

Effect Transistor ◽

Hot Carrier Effects ◽

Lightly Doped Drain

Hot-carrier effects on radio frequency noise characteristics of LDDn-type metal–oxide–semiconductor field effect transistors

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.582176 ◽

2000 ◽

Vol 18 (2) ◽

pp. 765-769 ◽

Cited By ~ 15

Author(s):

W. S. Kwan ◽

C. H. Chen ◽

M. J. Deen

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Field Effect ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Hot Carrier ◽

Noise Characteristics ◽

Hot Carrier Effects

Physical Analysis for Saturation Behavior of Hot-Carrier Degradation in Lightly Doped Drain N-Channel Metal-Oxide-Semiconductor Field Effect Transistors

10.1143/jjap.33.606 ◽

1994 ◽

Vol 33 (Part 1, No. 1B) ◽

pp. 606-611 ◽

Cited By ~ 18

Author(s):

Jung-Suk Goo ◽

Hyungsoon Shin ◽

Hyunsang Hwang ◽

Dae-Gwan Kang ◽

Dong-Hyuk Ju

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Physical Analysis ◽

Hot Carrier ◽

Lightly Doped Drain ◽

Hot Carrier Degradation

Hot-Carrier Effects on Total Dose Irradiated 65 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors

Chinese Physics Letters ◽

10.1088/0256-307x/33/7/076102 ◽

2016 ◽

Vol 33 (7) ◽

pp. 076102 ◽

Cited By ~ 5

Author(s):

Qi-Wen Zheng ◽

Jiang-Wei Cui ◽

Hang Zhou ◽

De-Zhao Yu ◽

Xue-Feng Yu ◽

...

Keyword(s):

Metal Oxide ◽

Total Dose ◽

Field Effect ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Hot Carrier Effects

Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks

10.1143/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC10

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Metal Gate ◽

Hot Carrier ◽

High K

Simple Model for Gate-Voltage Dependent Parasitic Resistancein Short Channel Lightly Doped Drain Metal Oxide Semiconductor Field Effect Transistors

10.1143/jjap.30.l535 ◽

1991 ◽

Vol 30 (Part 2, No. 4A) ◽

pp. L535-L537 ◽

Cited By ~ 2

Author(s):

Jung-Il Lee ◽

Myung-Bok Lee ◽

Sang Young Lee ◽

Kwang Nham Kang ◽

Kyung Sik Yoon

Keyword(s):

Simple Model ◽

Metal Oxide ◽

Gate Voltage ◽

Field Effect ◽

Oxide Semiconductor ◽

Short Channel ◽

Voltage Dependent ◽

Lightly Doped Drain

Novel Method of Intrinsic Characteristic Extraction in Lightly Doped Drain Metal Oxide Semiconductor Field Effect Transistors for Accurate Device Modeling

10.1143/jjap.43.918 ◽

2004 ◽

Vol 43 (3) ◽

pp. 918-924 ◽

Cited By ~ 1

Author(s):

Kenshi Tada ◽

Toshimasa Matsuoka ◽

Kenji Taniguchi ◽

Kazuhiro Maeda ◽

Tamotsu Sakai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Device Modeling ◽

Characteristic Extraction ◽

Novel Method ◽

Lightly Doped Drain ◽

Intrinsic Characteristic

Suppression of Parasitic Bipolar Action and Improvement of Hot-Carrier Reliability in Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted Oxygen) Introducing Recombination Centers near Source Junction

10.1143/jjap.36.6175 ◽

1997 ◽

Vol 36 (Part 1, No. 10) ◽

pp. 6175-6180 ◽

Cited By ~ 4

Author(s):

Toshiaki Tsuchiya ◽

Terukazu Ohno ◽

Satoshi Tazawa ◽

Masaaki Tomizawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Hot Carrier ◽

Recombination Centers

The Influence of Hf-Composition on Atomic Layer Deposition HfSiON Gated Metal–Oxide–Semiconductor Field-Effect Transistors after Channel-Hot-Carrier Stress

10.1143/jjap.48.04c009 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C009 ◽

Cited By ~ 5

Author(s):

Shuang-Yuan Chen ◽

Hung-Wen Chen ◽

Chuan-Hsi Liu ◽

Li-Wei Cheng

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Atomic Layer ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Layer Deposition ◽

Hot Carrier Stress

The Generation Process of Interface Traps by Hot-Carrier Injection in Nanoscale Metal–Oxide–Semiconductor Field-Effect Transistors

10.1143/jjap.51.02bc09 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC09 ◽

Cited By ~ 2

Author(s):

Ming Hu ◽

Takuya Yamane ◽

Toshiaki Tsuchiya

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Generation Process ◽

Interface Traps ◽

Carrier Injection ◽

Hot Carrier ◽

Hot Carrier Injection