Contactless electroreflectance of InGaN layers with indium content ≤36%: The surface band bending, band gap bowing, and Stokes shift issues

Band bending in colloidal quantum dot (CQD) solids has become important in driving charge carriers through devices. This is typically a result of band alignments at junctions in the device....

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The Effect of Surface States on Secondary Electron (SE) Dopant Contrast from Silicon p-n Junctions

MRS Proceedings ◽

10.1557/proc-1026-c04-02 ◽

2007 ◽

Vol 1026 ◽

Author(s):

Augustus K. W. Chee ◽

Conny Rodenburg ◽

Colin John Humphreys

Keyword(s):

Oxide Layer ◽

Computer Modelling ◽

Surface States ◽

Native Oxide ◽

Native Oxide Layer ◽

Element Analysis ◽

Surface Band ◽

Band Bending ◽

Wide Range ◽

Se Doping

AbstractDetailed computer modelling using finite-element analysis was performed for Si p-n junctions to investigate the effects of surface states and doping concentrations on surface band-bending, surface junction potentials and external patch fields. The density of surface states was determined for our Si specimens with a native oxide layer. Our calculations show that for a typical density of surface states for a Si specimen with a native oxide layer, the effects of external patch fields are negligible and the SE doping contrast is due to the built-in voltage across the p-n junction modified by surface band-bending. There is a good agreement between the experimental doping contrast and the calculated junction potential just below the surface, taking into account surface states, for a wide range of doping concentrations.

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Influence of surface band bending on the incorporation of impurities in semiconductors: Te in GaAs

Microelectronics Reliability ◽

10.1016/0026-2714(71)90279-4 ◽

1971 ◽

Vol 10 (4) ◽

pp. 255-256

Keyword(s):

Surface Band ◽

Band Bending ◽

Impurities In Semiconductors

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CHANGES INDUCED IN THE SURFACE ELECTRONIC STRUCTURE OF Be(0001) AFTER Si ADSORPTION

Surface Review and Letters ◽

10.1142/s0218625x02002907 ◽

2002 ◽

Vol 09 (02) ◽

pp. 687-691

Author(s):

L. I. JOHANSSON ◽

C. VIROJANADARA ◽

T. BALASUBRAMANIAN

Keyword(s):

Electronic Structure ◽

Band Structure ◽

Band Gap ◽

Electronic Properties ◽

Surface State ◽

Core Level ◽

Clean Surface ◽

Core Level Spectrum ◽

Surface Band ◽

Surface Electronic Structure

A study of effects induced in the Be 1s core level spectrum and in the surface band structure after Si adsorption on Be(0001) is reported. The changes in the Be 1s spectrum are quite dramatic. The number of resolvable surface components and the magnitude of the shifts do decrease and the relative intensities of the shifted components are drastically different compared to the clean surface. The surface band structure is also strongly affected after Si adsorption and annealing. At [Formula: see text] the surface state is found to move down from 2.8 to 4.1 eV. The band also splits at around 0.5 Å-1 along both the [Formula: see text] and [Formula: see text] directions. At [Formula: see text] and beyond [Formula: see text] only one surface state is observed in the band gap instead of the two for the clean surface. Our findings indicate that a fairly small amount of Si in the outer atomic layers strongly modifies the electronic properties of these layers.

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Surface band bending in as-grown and plasma-treated n-type GaN films using surface potential electric force microscopy

Applied Physics Letters ◽

10.1063/1.1703843 ◽

2004 ◽

Vol 84 (16) ◽

pp. 3070-3072 ◽

Cited By ~ 37

Author(s):

Sang-Jun Cho ◽

Seydi Doğan ◽

Shahriar Sabuktagin ◽

Michael A. Reshchikov ◽

Daniel K. Johnstone ◽

...

Keyword(s):

Surface Potential ◽

Electric Force ◽

Surface Band ◽

Band Bending ◽

Force Microscopy ◽

Electric Force Microscopy

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Effect of near-surface band bending on dopant profiles in ion-implanted silicon

Journal of Applied Physics ◽

10.1063/1.1638621 ◽

2004 ◽

Vol 95 (3) ◽

pp. 1134-1140 ◽

Cited By ~ 31

Author(s):

Michael Y. L. Jung ◽

Rudiyanto Gunawan ◽

Richard D. Braatz ◽

E. G. Seebauer

Keyword(s):

Surface Band ◽

Band Bending ◽

Near Surface ◽

Dopant Profiles ◽

Ion Implanted

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Passivation of Gaas by Novel P2S5/(NH4)2Sx Sulfurization Techniques

MRS Proceedings ◽

10.1557/proc-281-659 ◽

1992 ◽

Vol 281 ◽

Author(s):

J. T. Hsieh ◽

C. Y. Sun ◽

H. L. Hwang

Keyword(s):

Photoelectron Spectroscopy ◽

Surface Passivation ◽

Schottky Diodes ◽

Lower Surface ◽

State Density ◽

Surface Band ◽

Band Bending ◽

Barrier Heights ◽

Effective Barrier ◽

Metal Work

ABSTRACTA new surface passivation technique using P2S5/(NH4)2S on GaAs was investigated, and the results are compared with those of the (NH4)2Sx treatment. With this new surface treatment, the effective barrier heights for both Al- and Au—GaAs Schottky diodes were found to vary with the metal work functions, which is a clear evidence of the lower surface state density. Results of I—V measurements show that P2S5/(NH4)2S—passivated diodes have lower reverse leakage current and higher effective barrier height than those of the (NH4)2Sx -treated ones. Auger Electron Spectroscopy, X—ray photoelectron spectroscopy and Raman scattering measurements were done to characterize the surfaces including their compositions and surface band bending. In this paper, interpretations on this novel passivation effect is also provided.

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