Low interface state density SiO2deposited at 300 °C by remote plasma‐enhanced chemical vapor deposition on reconstructed Si surfaces
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1993 ◽
Vol 36
(2)
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pp. 279-284
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1998 ◽
Keyword(s):
1998 ◽
Vol 16
(5)
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pp. 2931-2940
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2007 ◽
Vol 38
(1-2)
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pp. 148-151
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1993 ◽
Vol 11
(3)
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pp. 626-630
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