Epitaxial Growth of SiC on Non-Typical Orientations and MOS Interfaces

2000 ◽  
Vol 640 ◽  
Author(s):  
Hiroyuki Matsunami ◽  
Tsunenobu Kimoto ◽  
Hiroshi Yano
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Electron Trapping ◽  
Conduction Band Edge ◽  
Coulomb Scattering ◽  
High Quality ◽  
Channel Mobility

ABSTRACTHigh-quality 4H-SiC has been epitaxially grown on (1120) substrates by chemical vapor deposition. The physical properties of epilayers and MOS interfaces on both (1120) and off-axis (0001) substrates are elucidated. An unintentionally doped 4H-SiC epilayer on (1120) shows a donor concentration of 1×1014 cm−3 with a total trap concentration as low as 3.8×1012 cm−3. Inversion-type planar MOSFETs fabricated on 4H-SiC (1120) exhibit a high channel mobility of 96 cm2/Vs. The channel mobility decreases according to the T−2.2 dependence above 200K, indicating reduced Coulomb scattering and/or electron trapping. The superior MOS interface on (1120) originates from the much lower interface state density near the conduction band edge.

Identification of Charging Effects in Plasma-Enhanced TEOS Deposition with Non-Contact Test Techniques

1998 ◽  
Author(s):  
Tomasz Brozek ◽  
James Heddleson
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Wafer Surface ◽  
Oxide Charge ◽  
Contact Test ◽  
Deposition Power ◽  
Oxide Deposition

Abstract Use of non-contact test techniques to characterize degradation of the Si-SiO2 system on the wafer surface exposed to a plasma environment have proven themselves to be sensitive and useful in investigation of plasma charging level and uniformity. The current paper describes application of the surface charge analyzer and surface photo-voltage tool to explore process-induced charging occurring during plasma enhanced chemical vapor deposition (PECVD) of TEOS oxide. The oxide charge, the interface state density, and dopant deactivation are studied on blanket oxidized wafers with respect to the effect of oxide deposition, power lift step, and subsequent annealing.

Low interface state density SiO2deposited at 300 °C by remote plasma‐enhanced chemical vapor deposition on reconstructed Si surfaces

1988 ◽  
Vol 63 (9) ◽  
pp. 4744-4746 ◽  
Author(s):  
G. G. Fountain ◽  
R. A. Rudder ◽  
S. V. Hattangady ◽  
R. J. Markunas ◽  
P. S. Lindorme
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Remote Plasma

Properties of Catalytic CVD SiNx For Antireflection Coatings

1998 ◽  
Vol 555 ◽  
Author(s):  
A. Izumi ◽  
H. Matsumura
Keyword(s):  
Vapor Deposition ◽  
Etching Rate ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Flow Ratio ◽  
Antireflection Coatings ◽  
Cvd Method ◽  
Insulating Properties

AbstractWe propose a novel preparation of high quality silicon nitride (SiNx) films by catalytic chemical vapor deposition (Cat-CVD) method for the application of antireflection coatings. It is found that the refractive index (n) of the Cat-CVD SiNx films are controlled from 2.0 to 2.5 by varying the flow ratio of SiH4 and NH3. The properties of the SiNx (n = 2.0) are investigated, and it is found that, 1) the 16-BHF etching rate of the Cat-CVD SiNx film is only 23 A/min, and the film shows excellent moisture resistance, 2) the Cat-CVD SiNx film shows good insulating properties, and the breakdown electric field is higher than 9 MV/cm and the interface state density is 5.6x 1011 cm2eV-1, 3) the step coverage of the film is very conformal.

SiO2/SiC Interface Properties on Various Surface Orientations

2002 ◽  
Vol 742 ◽  
Author(s):  
Hiroshi Yano ◽  
Taichi Hirao ◽  
Tsunenobu Kimoto ◽  
Hiroyuki Matsunami
Keyword(s):  
Conduction Band ◽  
Room Temperature ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Interface Properties ◽  
Mos Capacitors ◽  
Channel Mobility

ABSTRACTThe interface properties of MOS capacitors and MOSFETs were characterized using the (0001), (1120), and (0338) faces of 4H-SiC. (0001) and (1120) correspond to (111) and (110) in cubic structure. (0338) is semi-equivalent to (100). The interface states near the conduction band edge are discussed based on the capacitance and conductance measurements of n-type MOS capacitors at a low temperature and room temperature. The (0338) face indicated the smallest interface state density near the conduction band edge and highest channel mobility in n-channel MOSFETs among these faces.

The Effects of Post-Oxidation Anneal Conditions on Interface State Density Near the Conduction Band Edge and Inversion Channel Mobility for SiC MOSFETs

2000 ◽  
Vol 622 ◽  
Author(s):  
G.Y. Chung ◽  
C.C. Tin ◽  
J. R. Williams ◽  
K. McDonald ◽  
M. Di Ventra ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Conduction Band ◽  
Interface State ◽  
Interface States ◽  
State Density ◽  
Interface State Density ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Channel Mobility ◽  
Inversion Channel

ABSTRACTResults are reported for the passivation of interface states near the conduction band edge in n-4H-SiC using post-oxidation anneals in nitric oxide, ammonia and forming gas (N2/5%H2). Anneals in nitric oxide and ammonia reduce the interface state density significantly, while forming gas anneals are largely ineffective. Results suggest that interface states in SiO2/SiC and SiO2/Si have different origins, and a model is described for interface state passivation by nitrogen in the SiO2/SiC system. The inversion channel mobility of 4H-SiC MOSFETs increases with the NO annealing.

Improved Inversion Channel Mobility in Si-face 4H-SiC MOSFETs by Phosphorus Incorporation Technique

2010 ◽  
Vol 1246 ◽  
Author(s):  
Dai Okamoto ◽  
Hiroshi Yano ◽  
Shinya Kotake ◽  
Kenji Hirata ◽  
Tomoaki Hatayama ◽  
...  
Keyword(s):  
Conduction Band ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Channel Mobility ◽  
Inversion Channel

AbstractWe propose a new technique to fabricate 4H-SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) with high inversion channel mobility. P atoms were incorporated into the SiO2/4H-SiC(0001) interface by post-oxidation annealing using phosphoryl chloride (POCl3). The interface state density at 0.2 eV from the conduction band edge was reduced to less than 1 × 1011 cm−2eV−1 by the POCl3 annealing at 1000 °C. The peak field-effect mobility of 4H-SiC MOSFETs on (0001) Si-face processed with POCl3 annealing at 1000 °C was approximately 90 cm2/Vs. The high channel mobility is attributed to the reduced interface state density near the conduction band edge.

High Quality GaAs Mis Diodes With Very Low Surface State Density

1990 ◽  
Vol 209 ◽  
Author(s):  
Yoshihisa Fujisaki ◽  
Sumiko Sakai ◽  
Saburo Ataka ◽  
Kenji Shibata
Keyword(s):  
Chemical Vapor Deposition ◽  
Density Of States ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
State Density ◽  
High Quality ◽  
Metal Insulator ◽  
X Ray ◽  
Mis Devices

ABSTRACTHigh quality GaAs/SiO2 MIS( Metal Insulator Semiconductor ) diodes were fabricated using (NH4)2S treatment and photo-assisted CVD( Chemical Vapor Deposition ). The density of states at the GaAs and SiO2 interface is the order of 1011 cm-2eV-1 throughout the forbidden energy range, which is smaller by the order of two than that of the MIS devices made by the conventional CVD process. The mechanism attributable to the interface improvement was investigated through XPS( X-ray Photoelectron Spectroscopy ) analyses.

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