A new type of high efficiency with a low‐cost solar cell having the structure of a μc‐SiC/polycrystalline silicon heterojunction

1990 ◽  
Vol 67 (10) ◽  
pp. 6538-6543 ◽  
Author(s):  
Y. Matsumoto ◽  
G. Hirata ◽  
H. Takakura ◽  
H. Okamoto ◽  
Y. Hamakawa
Keyword(s):  
Solar Cell ◽  
Polycrystalline Silicon ◽  
High Efficiency ◽  
Low Cost ◽  
New Type

Advanced, Thin, Polycrystalline Silicon-Film™ Solar Cells on Low-Cost Substrates

1996 ◽  
Vol 426 ◽  
Author(s):  
Robert B. Hall ◽  
Allen M. Barnett ◽  
Jeff E. Cotter ◽  
David H. Ford ◽  
Alan E. Ingram ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Polycrystalline Silicon ◽  
Silicon Solar Cell ◽  
High Efficiency ◽  
Low Cost ◽  
Silicon Film ◽  
Silicon Layer ◽  
Thin Polycrystalline

AbstractThin, polycrystalline silicon solar cells have the potential for the realization of a 15%, lowcost photovoltaic product. As a photovoltaic material, polycrystalline material is abundant, benign, and electrically stable. The thin-film polycrystalline silicon solar cell design achieves high efficiency by incorporating techniques to enhance optical absorption, ensure electrical confinement, and minimize bulk recombination currents. AstroPower's approach to a thin-film polycrystalline silicon solar cell technology is based on the Silicon-Film™ process, a continuous sheet manufacturing process for the growth of thin films of polycrystalline silicon on low-cost substrates. A new barrier layer and substrate have been developed for advanced solar cell designs. External gettering with phosphorus has been employed to effect significant improvements leading to effective minority carrier diffusion lengths greater than 250 micrometers in the active silicon layer. Light trapping has been observed in 60-micrometer thick films of silicon grown on the new barrier-coated substrate. An efficiency of 12.2% in a 0.659 cm2 solar cell has been achieved with the advanced structure.

Toward 20% Efficiency With a-Si // poly-Si Tandem Solar Cell

1992 ◽  
Vol 258 ◽  
Author(s):  
M. Yoshimi ◽  
W. Ma ◽  
T. Horiuchi ◽  
C. C. Lim ◽  
S. C. De ◽  
...  
Keyword(s):  
Solar Cell ◽  
High Efficiency ◽  
Low Cost ◽  
Cell Structure ◽  
Experimental Investigations ◽  
Total Efficiency ◽  
Tandem Solar Cell ◽  
Structure Variation ◽  
Technical Data ◽  
Bottom Cell

ABSTRACTA series of experimental investigations has been made on the a-Si // poly-Si tandem solar cell which is one of the most promised candidate of high cost-performance photovoltaic cell, e.g., high efficiency, low cost with almost no light induced degradation. Employing high conductivity with wide optical band gap p type microcrystalline SiC (μ-SiC) as a window material together with a-SiC as an interface buffer layer and also n type μc-Si as a back ohmic contact layer in the poly-Si based bottom cell, the conversion efficiency of 17.2 % has been obtained. Combining an optically transparent a-Si p-i-n cell as a top cell with an optical coupler between the top and the poly-Si bottom cell, a total efficiency of 20.3 % has been obtained so far on the four-terminal stacked mode structure. A systematic technical data for the optimization of cell structure variation on the developed tandem solar cells are presented and further possibility to improving the performance are discussed.

New Type of Distributed Biomass Combustion Device Necessity and Feasibility in China

2011 ◽  
Vol 383-390 ◽  
pp. 4013-4016
Author(s):  
Chang Le Pang ◽  
Li Chen ◽  
Ren Jie Dong
Keyword(s):  
Rural Areas ◽  
High Efficiency ◽  
Low Cost ◽  
Biomass Combustion ◽  
Combustion System ◽  
Human Beings ◽  
New Type ◽  
Energy Products ◽  
The Ideal ◽  
Commercial Energy

Worldwide changes in climate and environment forced us human beings to seek for alternatives to replace commercial energy products like coal and petroleum. However, there have some difficulties to promote commercial energy products in China’s rural areas and newly urbanized areas. Biomass combustion system will become one of the ideal devices for such areas in a period of time. It is necessary to develop new types of biomass combustion system consisting of gasification or Semi-Gasification and combustion units so that it can provide high efficiency and low cost for household purposes.

scholarly journals III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

2014 ◽  
Vol 1 (3-4) ◽  
Author(s):  
Nikhil Jain ◽  
Mantu K. Hudait
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Low Cost ◽  
Si Substrate ◽  
Future Outlook ◽  
Si Solar Cells ◽  
Multijunction Solar Cells ◽  
The Future ◽  
Multijunction Solar Cell

AbstractAchieving high-efficiency solar cells and at the same time driving down the cell cost has been among the key objectives for photovoltaic researchers to attain a lower levelized cost of energy (LCOE). While the performance of silicon (Si) based solar cells have almost saturated at an efficiency of ~25%, III–V compound semiconductor based solar cells have steadily shown performance improvement at ~1% (absolute) increase per year, with a recent record efficiency of 44.7%. Integration of such high-efficiency III–V multijunction solar cells on significantly cheaper and large area Si substrate has recently attracted immense interest to address the future LCOE roadmaps by unifying the high-efficiency merits of III–V materials with low-cost and abundance of Si. This review article will discuss the current progress in the development of III–V multijunction solar cell integration onto Si substrate. The current state-of-the-art for III–V-on-Si solar cells along with their theoretical performance projections is presented. Next, the key design criteria and the technical challenges associated with the integration of III–V multijunction solar cells on Si are reviewed. Different technological routes for integrating III–V solar cells on Si substrate through heteroepitaxial integration and via mechanical stacking approach are presented. The key merits and technical challenges for all of the till-date available technologies are summarized. Finally, the prospects, opportunities and future outlook toward further advancing the performance of III–V-on-Si multijunction solar cells are discussed. With the plummeting price of Si solar cells accompanied with the tremendous headroom available for improving the III–V solar cell efficiencies, the future prospects for successful integration of III–V solar cell technology onto Si substrate look very promising to unlock an era of next generation of high-efficiency and low-cost photovoltaics.

Solar Cell Characteristics of High-Efficiency Polycrystalline Silicon Solar Cells Using SOG-Cast Wafers

1987 ◽  
Vol 26 (Part 1, No. 10) ◽  
pp. 1667-1673 ◽  
Author(s):  
Ryuichi Shimokawa ◽  
Keiichi Nishida ◽  
Akio Suzuki ◽  
Yutaka Hayashi
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Polycrystalline Silicon ◽  
High Efficiency ◽  
Silicon Solar Cells

CVD Diamond Film Polishing Based on Accelerant Theory

2012 ◽  
Vol 497 ◽  
pp. 185-189
Author(s):  
Li Zhang ◽  
Shao Jie Ding ◽  
Dong Hui Wen ◽  
Zhen Hao Xu ◽  
Shi Ming Ji
Keyword(s):  
Diamond Film ◽  
High Efficiency ◽  
Low Cost ◽  
Cvd Diamond ◽  
Reaction Rates ◽  
Precision Machining ◽  
Key Technologies ◽  
Ultra Precision ◽  
New Type ◽  
Cvd Diamond Film

CVD diamond has become the mainstream trend for the development of diamond. Its ultra precision machining is one of the key technologies for expanding the application of CVD diamond film. The efficient polishing method is studied, called accelerant polishing technology, which can lower the activation energy needed in diamond graphitization by the accelerant action of transition metal. It accelerates reaction rates of graphitization and promotes the implementation of diamond’s removal mechanism. Experimentation results indicate that the polishing method is one new type of precision polishing technology with low cost and high efficiency.

A Study of Back Electrode Stacked With Low Cost Reflective Layers For High-Efficiency Thin-Film Silicon Solar Cell

2014 ◽  
Vol 136 (3) ◽  
Author(s):  
Tsung-Wei Chang ◽  
Chao-Te Liu ◽  
Wen-Hsi Lee ◽  
Yu-Jen Hsiao
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
High Performance ◽  
Silicon Solar Cell ◽  
High Efficiency ◽  
Low Cost ◽  
Visible Region ◽  
Particle Diameter ◽  
Solid Content ◽  
Thin Film Silicon

In this study, commercially available white paint is used as a pigmented dielectric reflector (PDR) in the fabrication of a low-cost back electrode stack with an Al-doped ZnO (AZO) layer for thin-film silicon solar cell applications. An initial AZO film was deposited by the radio-frequency magnetron sputtering method. In order to obtain the highest transmittance and lowest resistivity of AZO film, process parameters such as sputtering power and substrate temperature were investigated. The optimal 100-nm-thick AZO film with low resistivity and high transmittance in the visible region are 6.4 × 10−3 Ω·cm and above 80%, respectively. Using glue-like white paint doped withTiO2 nanoparticles as the PDR enhances the external quantum efficiency (EQE) of a microcrystalline silicon absorptive layer owing to the doped white particles improving Fabry–Pérot interference (FPI), which raises reflectance and scattering ability. To realize the cost down requirement, decreasing the noble metal film thickness such as a 30-nm-thick silver reflector film, and a small doping particle diameter (D50 = 135 nm) and a high solid content (20%) lead to FPI improvement and a great EQE, which is attributed to improved scattering and reflectivity because of optimum diameter (Dopt) and thicker PDR film. The results indicate that white paint can be used as a reflector coating in low-cost back-electrode structures in high-performance electronics.

scholarly journals Synthesis and characterization of high-efficiency low-cost solar cell thin film

2019 ◽  
Vol 37 (1) ◽  
pp. 127-135 ◽  
Author(s):  
W. Christopher Immanuel ◽  
S. Paul Mary Deborrah ◽  
S.S.R. Inbanathan ◽  
D. Nithyaa Sree
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Solar Cell ◽  
High Efficiency ◽  
Light Emitting Diode ◽  
Uv Spectroscopy ◽  
Low Cost ◽  
Vital Role ◽  
Electrical And Optical Properties ◽  
Group Ii Vi Semiconductors

AbstractPolycrystalline chalcogenide semiconductors play a vital role in solar cell applications due to their outstanding electrical and optical properties. Among the chalcogenide semi-conductors, CdZnS is one kind of such important material for applications in various modern solid state devices such as solar cells, light emitting diode, detector etc. Due to their applications in numerous electro-optic devices, group II-VI semiconductors have been studied extensively. In recent years, major attention has been given to the study of electrical and optical properties of CdZnS thin films. In this work, Cd1−xZnxS thin films were prepared by chemical bath deposition technique. Phase purity and surface morphology properties were analyzed using field emission scanning electron microscope (FE-SEM) and X-ray diffraction (XRD) studies. Chemical composition was studied using energy dispersive spectrophotometry (EDS). Optical band gap property was investigated using UV-Spectroscopy. Electrical conductivity studies were performed by two probe method and thermoelectric power setup (TEP) to determine the type of the material. This work reports the effect of Zn on structural, electrical, microstructural and optical properties of these films.

The Research on Solar Cell of a Novel Ribbon Silicon Material

2013 ◽  
Vol 676 ◽  
pp. 103-107
Author(s):  
Jian Gong Li ◽  
Peng Wu ◽  
Peng Yu ◽  
Shuai Li
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Polycrystalline Silicon ◽  
Low Cost ◽  
Photovoltaic Performance ◽  
Metallurgical Grade Silicon ◽  
Silicon Material ◽  
Theoretical Support ◽  
The Cost ◽  
Diffusion Of Impurities

Ribbon silicon material is specially designed for solar cell wafers. In this paper, a novel ribbon silicon material “dipping method” has been designed in order to lower the cost of solar cell. The principle and procedure of dipping method were described. In addition, the diffusion of impurities in the silicon wafer and its influence on the efficiency of solar cells were investigated. The photovoltaic performance of polycrystalline silicon solar cells which were based on the metallurgical grade silicon substrate with the thickness of 600μm, was simulated by AMPS1-D software. And some import parameters were obtained including I-V characteristic, 17.004% conversion efficiency. This artic is provided theoretical support to the industrial production of solar cells by dipping method, and it will open a new road to production low cost solar cell.

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