Effects of order and disorder on field‐effect mobilities measured in conjugated polymer thin‐film transistors

1994 ◽  
Vol 75 (12) ◽  
pp. 7954-7957 ◽  
Author(s):  
E. R. Holland ◽  
D. Bloor ◽  
A. P. Monkman ◽  
A. Brown ◽  
D. De Leeuw ◽  
...  
2020 ◽  
Vol 20 (9) ◽  
pp. 5486-5490
Author(s):  
Jun-Ik Park ◽  
Hyun-Seok Jeong ◽  
Premkumar Vincent ◽  
Jihwan Park ◽  
Do-Kyung Kim ◽  
...  

We explore the effect of high-speed blade coating on electrical characteristics of conjugated polymer-based thin-film transistors (TFTs). As the blade-coating speed increased, the thickness of the polymer thin-film was naturally increased while the surface roughness was found to be unchanged. Polymer TFTs show two remarkable tendencies on the magnitude of field-effect mobility with increasing blade-coating speed. As the blade-coating speed increased up to 2 mm/s, the fieldeffect mobility increased to 4.72 cm2V−1s−1. However, when the coating speed reached 6 mm/s beyond 2 mm/s, the field-effect mobility rather decreased to 3.18 cm2V−1s−1. The threshold voltage was positively shifted from 2.09 to 8.29 V with respect to increase in blade-coating speed.


Materials ◽  
2019 ◽  
Vol 12 (21) ◽  
pp. 3643 ◽  
Author(s):  
Shuichi Nagamatsu ◽  
Masataka Ishida ◽  
Shougo Miyajima ◽  
Shyam S. Pandey

A novel film preparation method utilizing polymer suspension, entitled adsorbing deposition in suspensions (ADS), has been proposed. The poly(3-hexylthiophene) (P3HT) toluene solution forms P3HT nanofibrils dispersed suspension by aging. P3HT nanofibrils are highly crystallized with sharp vibronic absorption spectra. By the ADS method, only P3HT nanofibrils in suspension can be deposited on the substrate surface without any disordered fraction from the dissolved P3HT in suspension. Formed ADS film contains only the nanostructured conjugated polymer. Fabricated polymer thin-film transistor (TFT) utilizing ADS P3HT film shows good TFT performances with low off current, narrow subthreshold swing and large on/off current ratio.


2004 ◽  
Vol 814 ◽  
Author(s):  
Yifan Xu ◽  
Paul R. Berger ◽  
James N. Wilson ◽  
Uwe H.F. Bunz

The photoresponse of polymer field effect transistors (PFETs) based on the 2,5- bis(dibutylaminostyryl)-1,4-phenylene-b-alkyne-b-1,4-bis(2-ethylhexyl)benzene terpolymer (BAS-PPE) is investigated. BAS-PPE is a photoluminescent conducting polymer with a bandgap of 2.25 eV. The BAS-PPE PFETs were fabricated using an open coplanar configuration and light is illuminated onto the top side of the PFETs. A sweep of VDS demonstrates that IDS saturation is suppressed during illumination, which suggests that pinch-off can not be reached since the injection of photo-generated carriers continues unabated. Also, with incident light, the channel can not be turned off, even at high positive gate biases, due to the accumulation of photo- generated carriers. A sweep of VDS also shows that BAS-PPE can act as a p-type polymer and favors hole injection and transport.


2004 ◽  
Vol 16 (23) ◽  
pp. 4699-4704 ◽  
Author(s):  
Michael C. Hamilton ◽  
Sandrine Martin ◽  
Jerzy Kanicki

2010 ◽  
Vol 20 (6) ◽  
pp. 1000-1004 ◽  
Author(s):  
Neng-Jye Yang ◽  
Chien-Shiun Liao ◽  
Show-An Chen

2015 ◽  
Vol 3 (27) ◽  
pp. 7062-7066 ◽  
Author(s):  
Sheng Sun ◽  
Linfeng Lan ◽  
Peng Xiao ◽  
Zhenhui Chen ◽  
Zhenguo Lin ◽  
...  

Flexible solution-processed polymer TFTs with a low band-gap donor–acceptor conjugated polymer as the active layer and electrochemically oxidized AlOx:Nd as the gate insulator are fabricated on PEN substrates.


2018 ◽  
Vol 4 (9) ◽  
pp. 1800239 ◽  
Author(s):  
Hung-Chin Wu ◽  
Simon Rondeau-Gagné ◽  
Yu-Cheng Chiu ◽  
Franziska Lissel ◽  
John W. F. To ◽  
...  

2003 ◽  
Vol 771 ◽  
Author(s):  
Michael C. Hamilton ◽  
Sandrine Martin ◽  
Jerzy Kanicki

AbstractWe have investigated the effects of white-light illumination on the electrical performance of organic polymer thin-film transistors (OP-TFTs). The OFF-state drain current is significantly increased, while the drain current in the strong accumulation regime is relatively unaffected. At the same time, the threshold voltage is decreased and the subthreshold slope is increased, while the field-effect mobility of the charge carriers is not affected. The observed effects are explained in terms of the photogeneration of free charge carriers in the channel region due to the absorbed photons.


Sign in / Sign up

Export Citation Format

Share Document