Influence of the silicon carbide surface morphology on the epitaxial graphene formation

2011 ◽  
Vol 99 (11) ◽  
pp. 111901 ◽  
Author(s):  
M. H. Oliveira ◽  
T. Schumann ◽  
M. Ramsteiner ◽  
J. M. J. Lopes ◽  
H. Riechert
Keyword(s):  
Silicon Carbide ◽  
Surface Morphology ◽  
Epitaxial Graphene

Epitaxial Graphene Growth on 6H-SiC (0001) Substrate by Confinement Controlled Sublimation of Silicon Carbide

2013 ◽  
Vol 709 ◽  
pp. 62-65
Author(s):  
Tian Min Lei ◽  
Peng Fei Deng ◽  
Yu Ming Zhang ◽  
Hui Guo
Keyword(s):  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Surface Morphology ◽  
Field Emission ◽  
Growth Temperature ◽  
High Growth ◽  
Epitaxial Graphene ◽  
Large Area ◽  
Atomic Force ◽  
Electronic Microscope

Large area epitaxial graphene (EG) layers are synthesized on 6H-SiC (0001) by annealing at 1500 °C for 5 min in a closed graphite chamber at low vacuum of 10-3 mbar and its 2D band in Raman spectra can be satisfactorily fitted by a single Lorentzian. From Raman spectroscopy, measurements indicate that too high growth temperature is to the disadvantage of the formation of graphene. The results of atomic force microscope (AFM) and field-emission scanning electronic microscope (FE-SEM) reveal the surface morphology of graphene is related with its growth temperature.

Fast Selective Sensing of Nitrogen-Based Gases Utilizing δ-MnO2-Epitaxial Graphene-Silicon Carbide Heterostructures for Room Temperature Gas Sensing

2020 ◽  
Vol 29 (5) ◽  
pp. 846-852
Author(s):  
Michael D. Pedowitz ◽  
Soaram Kim ◽  
Daniel I. Lewis ◽  
Balaadithya Uppalapati ◽  
Digangana Khan ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Room Temperature ◽  
Gas Sensing ◽  
Epitaxial Graphene

Effect of surface morphology on the electron mobility of epitaxial graphene grown on 0° and 8° Si-terminated 4H-SiC substrates

2012 ◽  
Vol 21 (9) ◽  
pp. 097304 ◽  
Author(s):  
Jia Li ◽  
Li Wang ◽  
Zhi-Hong Feng ◽  
Cui Yu ◽  
Qing-Bin Liu ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Electron Mobility ◽  
Epitaxial Graphene ◽  
Effect Of Surface

Cycloaddition reactions on epitaxial graphene

2019 ◽  
Vol 43 (28) ◽  
pp. 11251-11257 ◽  
Author(s):  
Pablo A. Denis ◽  
C. Pereyra Huelmo ◽  
Federico Iribarne
Keyword(s):  
Silicon Carbide ◽  
Buffer Layer ◽  
First Principles ◽  
Epitaxial Graphene ◽  
Cycloaddition Reactions ◽  
First Principles Calculations

By means of first principles calculations we studied the occurrence of cycloaddition reactions on the buffer layer of silicon carbide. Interestingly, the presence of the substrate favors the 1,3 cycloaddition instead of the [2+2] or [4+2] ones.

Direct Observation of Dielectric Breakdown at Step-Bunching on 4H-SiC

2015 ◽  
Vol 821-823 ◽  
pp. 468-471 ◽  
Author(s):  
Yuki Mori ◽  
Mieko Matsumura ◽  
Hirotaka Hamamura ◽  
Toshiyuki Mine ◽  
Akio Shima ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Surface Morphology ◽  
Dielectric Breakdown ◽  
Optical Emission ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Tem Analysis ◽  
Mos Capacitor ◽  
Step Bunching ◽  
Electrical Stress

The mechanism of dielectric breakdown of oxide on step-bunching of 4H-silicon carbide (SiC) was investigated. Comparing the surface morphology obtained before forming metal-oxide-semiconductor (MOS) capacitor and optical emission on the capacitor under electrical stress, it was cleared that current concentrates on step-bunching and it often caused preferential dielectric breakdown. Based on TEM analysis and the observation of time dependence of emission under the stress, a new model was proposed to explain the dielectric breakdown on step-bunching.

scholarly journals Structural Modifications in Epitaxial Graphene on SiC Following 10 keV Nitrogen Ion Implantation

2020 ◽  
Vol 10 (11) ◽  
pp. 4013
Author(s):  
Priya Darshni Kaushik ◽  
Gholam Reza Yazdi ◽  
Garimella Bhaskara Venkata Subba Lakshmi ◽  
Grzegorz Greczynski ◽  
Rositsa Yakimova ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Defect Density ◽  
Epitaxial Graphene ◽  
Monolayer Graphene ◽  
Vacancy Defects ◽  
Nitrogen Ion Implantation ◽  
Nitrogen Ion

Modification of epitaxial graphene on silicon carbide (EG/SiC) was explored by ion implantation using 10 keV nitrogen ions. Fragments of monolayer graphene along with nanostructures were observed following nitrogen ion implantation. At the initial fluence, sp3 defects appeared in EG; higher fluences resulted in vacancy defects as well as in an increased defect density. The increased fluence created a decrease in the intensity of the prominent peak of SiC as well as of the overall relative Raman intensity. The X-ray photoelectron spectroscopy (XPS) showed a reduction of the peak intensity of graphitic carbon and silicon carbide as a result of ion implantation. The dopant concentration and level of defects could be controlled both in EG and SiC by the fluence. This provided an opportunity to explore EG/SiC as a platform using ion implantation to control defects, and to be applied for fabricating sensitive sensors and nanoelectronics devices with high performance.

scholarly journals EFFECT OF STIRRING RATE ON ELECTROCHEMICAL CODEPOSITION OF Ni-SiC COMPOSITE

2015 ◽  
Vol 12 (12) ◽  
pp. 30-33
Author(s):  
Kailash Hamal ◽  
Armila Rajbhandari ◽  
Gobinda Gyawali ◽  
Soo Wohn Lee
Keyword(s):  
Silicon Carbide ◽  
Surface Morphology ◽  
Cationic Surfactant ◽  
Coefficient Of Friction ◽  
Crystalline Phase ◽  
Crystal Orientation ◽  
Xrd Analysis ◽  
Stirring Rate ◽  
Nickel Silicon ◽  
Sulfamate Bath

Nickel-Silicon Carbide (Ni-SiC) composite has been prepared by electrochemical codeposition technique. Nickel sulfamate bath was used along with grain modifier saccharine and cationic surfactant cetyltrimetylammonium bromide (CTAB). The effect of stirring rate was systematically studied and optimized to get well dispersed SiC particles in appropriate amount. Mixed crystalline phase with reinforced [2 1 1] crystal orientation was obtained by XRD analysis. The result revealed that, 250 revolutions per minute (rpm) is optimum stirring rate for the electrochemical codeposition of Ni–SiC. Coating prepared at 250 rpm showed highest microhardness and lowest coefficient of friction with better surface morphology and well distributed nano SiC particles.Scientific World, Vol. 12, No. 12, September 2014, page 30-33       

Electrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky Contacts

2014 ◽  
Vol 778-780 ◽  
pp. 1142-1145 ◽  
Author(s):  
Filippo Giannazzo ◽  
Stefan Hertel ◽  
Andreas Albert ◽  
Antonino La Magna ◽  
Fabrizio Roccaforte ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Photoelectron Spectroscopy ◽  
Schottky Contact ◽  
Epitaxial Graphene ◽  
Schottky Contacts ◽  
Specific Contact Resistance ◽  
Monolayer Graphene ◽  
Conductive Atomic Force Microscopy

Epitaxial graphene fabricated by thermal decomposition of the Si-face of silicon carbide (SiC) forms a defined interface to the SiC substrate. As-grown monolayer graphene with buffer layer establishes an ohmic interface even to low-doped (e. g. [N] ≈ 1015 cm-3) SiC, and a specific contact resistance as low as ρC = 5.9×10-6 Ωcm2 can be achieved on highly n-doped SiC layers. After hydrogen intercalation of monolayer graphene, the so-called quasi-freestanding graphene forms a Schottky contact to n-type SiC with a Schottky barrier height of 1.5 eV as determined from C-V analysis and core level photoelectron spectroscopy (XPS). This value, however, strongly deviates from the respective value of less than 1 eV determined from I-V measurements. It was found from conductive atomic force microscopy (C-AFM) that the Schottky barrier is locally lowered on other crystal facets located at substrate step edges. For very small Schottky contacts, the barrier height extracted from I-V curves approaches the value of 1.5 eV from C-V and XPS.

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