Epitaxial Graphene Growth on 6H-SiC (0001) Substrate by Confinement Controlled Sublimation of Silicon Carbide

2013 ◽  
Vol 709 ◽  
pp. 62-65
Author(s):  
Tian Min Lei ◽  
Peng Fei Deng ◽  
Yu Ming Zhang ◽  
Hui Guo
Keyword(s):  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Surface Morphology ◽  
Field Emission ◽  
Growth Temperature ◽  
High Growth ◽  
Epitaxial Graphene ◽  
Large Area ◽  
Atomic Force ◽  
Electronic Microscope

Large area epitaxial graphene (EG) layers are synthesized on 6H-SiC (0001) by annealing at 1500 °C for 5 min in a closed graphite chamber at low vacuum of 10-3 mbar and its 2D band in Raman spectra can be satisfactorily fitted by a single Lorentzian. From Raman spectroscopy, measurements indicate that too high growth temperature is to the disadvantage of the formation of graphene. The results of atomic force microscope (AFM) and field-emission scanning electronic microscope (FE-SEM) reveal the surface morphology of graphene is related with its growth temperature.

Scanning probe analysis of twisted graphene grown on a graphene/silicon carbide template

2021 ◽  
Author(s):  
Yao Yao ◽  
Ryota Negishi ◽  
Daisuke Takajo ◽  
Makoto Takamura ◽  
Yoshitaka Taniyasu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Growth Temperature ◽  
Chemical Vapor ◽  
Epitaxial Graphene ◽  
Scanning Tunneling ◽  
Atomic Force ◽  
Graphene Island ◽  
Grown Graphene ◽  
Few Layer Graphene ◽  
Twisted Graphene

Abstract Overlayer growth of graphene on an epitaxial graphene/silicon carbide (SiC) as a solid template by ethanol chemical vapor deposition is performed over a wide growth temperature range from 900 ºC to 1450 ºC. Structural analysis using atomic force and scanning tunneling microscopies reveal that graphene islands grown at 1300 ºC form hexagonal twisted bilayer graphene as a single crystal. When the growth temperature exceeds 1400 ºC, the grown graphene islands show a circular shape. Moreover, moiré patterns with different periods are observed in a single graphene island. This means that the graphene islands grown at high temperature are composed of several graphene domains with different twist angles. From these results, we conclude that graphene overlayer growth on the epitaxial graphene/SiC solid at 1300 ºC effectively synthesizes the twisted few-layer graphene with a high crystallinity.

High Temperature Graphene Formation on Capped and Uncapped SiC

2011 ◽  
Vol 679-680 ◽  
pp. 785-788 ◽  
Author(s):  
Robert Göckeritz ◽  
Denny Schmidt ◽  
Moritz Beleites ◽  
Gerhard Seifert ◽  
Stefan P. Krischok ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Atomic Force Microscopy ◽  
High Temperature ◽  
Surface Morphology ◽  
Epitaxial Graphene ◽  
Argon Pressure ◽  
Slow Heating ◽  
Heating Rates ◽  
Force Microscopy ◽  
Atomic Force

Epitaxial graphene was grown on Si-face 4H-SiC. A SiC pretreatment with a carbon cap¬ping technique was used as well as slow heating rates and a temperature of 1800 °C under atmos¬pheric argon pressure. The surface morphology was investigated by atomic force microscopy and Raman spectroscopy was performed for samples with different graphitization times.

Surface Cusp Formation in Si Homoepitaxy

2004 ◽  
Vol 832 ◽  
Author(s):  
J.-M. Baribeau ◽  
X. Wu ◽  
M. Beaulieu ◽  
D.J. Lockwood ◽  
N.L. Rowell
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Surface Density ◽  
Growth Direction ◽  
Low Energy ◽  
Large Area ◽  
Columnar Growth ◽  
Force Microscopy ◽  
Atomic Force ◽  
Si Films

ABSTRACTWe report a study of the surface morphology and microstructure of Si epitaxial layers grown by MBE on (001) Si at temperatures at which epitaxy breakdown is observed. For films grown in the 400 - 450 °C temperature range the epitaxy breakdown is very sluggish and characterized by a columnar growth and the formation of surface cusps. We have used atomic force microscopy to study the shape, size and distribution of those surface cusps. Surface cusps are of square shape with sides predominantly oriented along <110> directions and are typically of 50 nm size and 5 nm depth. The cusps can be very regular in size and their surface density (typically of 109-1010 cm-2) is dependent on the growth temperature. The epitaxial Si in this temperature regime exhibits a residual strain of the order of -5 × 10−5 in the growth direction. Photoluminescence (PL) from cusped Si films is characterized by a broad PL at low energy possibly due to impurities incorporation at low growth temperatures. We have observed that Ge self-assembled dots can be grown on cusped surfaces. Large area AFM measurements reveal that surface cusps are “decorated” by clusters of large dome-like Ge dots, while a lower density of smaller dome and pyramid shape islands are seen away from the cusps.

scholarly journals Multifractal characterization of epitaxial silicon carbide on silicon

2017 ◽  
Vol 35 (3) ◽  
pp. 539-547
Author(s):  
Ştefan Ţălu ◽  
Sebastian Stach ◽  
Shikhgasan Ramazanov ◽  
Dinara Sobola ◽  
Guseyn Ramazanov
Keyword(s):  
Silicon Carbide ◽  
Surface Condition ◽  
Three Dimensional ◽  
Epitaxial Silicon ◽  
Large Area ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Nano Size

AbstractThe purpose of this study was to investigate the topography of silicon carbide films at two steps of growth. The topography was measured by atomic force microscopy. The data were processed for extraction of information about surface condition and changes in topography during the films growth. Multifractal geometry was used to characterize three-dimensional micro- and nano-size features of the surface. X-ray measurements and Raman spectroscopy were performed for analysis of the films composition. Two steps of morphology evolution during the growth were analyzed by multifractal analysis. The results contribute to the fabrication of silicon carbide large area substrates for micro- and nanoelectronic applications.

Influence of the silicon carbide surface morphology on the epitaxial graphene formation

2011 ◽  
Vol 99 (11) ◽  
pp. 111901 ◽  
Author(s):  
M. H. Oliveira ◽  
T. Schumann ◽  
M. Ramsteiner ◽  
J. M. J. Lopes ◽  
H. Riechert
Keyword(s):  
Silicon Carbide ◽  
Surface Morphology ◽  
Epitaxial Graphene

scholarly journals Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates

2010 ◽  
Vol 645-648 ◽  
pp. 565-568 ◽  
Author(s):  
Rositza Yakimova ◽  
Chariya Virojanadara ◽  
Daniela Gogova ◽  
Mikael Syväjärvi ◽  
D. Siche ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Atmospheric Pressure ◽  
Single Layer ◽  
Epitaxial Graphene ◽  
Single Layer Graphene ◽  
Theoretical Studies ◽  
Large Area ◽  
Layer Graphene ◽  
Spatial Uniformity ◽  
Formation Conditions

We are aiming at understanding the graphene formation mechanism on different SiC polytypes (6H, 4H and 3C) and orientations with the ultimate goal to fabricate large area graphene (up to 2 inch) with controlled number of monolayers and spatial uniformity. To reach the objectives we are using high-temperature atmospheric pressure sublimation process in an inductively heated furnace. The epitaxial graphene is characterized by ARPES, LEEM and Raman spectroscopy. Theoretical studies are employed to get better insight of graphene patterns and stability. Reproducible results of single layer graphene on the Si-face of 6H and 4H-SiC polytypes have been attained. It is demonstrated that thickness uniformity of graphene is very sensitive to the substrate miscut.

scholarly journals Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium

2020 ◽  
Author(s):  
Dario Schiavon ◽  
Elżbieta Litwin-Staszewska ◽  
Rafał Jakieła ◽  
Szymon Grzanka ◽  
Piotr Perlin
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
Low Temperature ◽  
Surface Morphology ◽  
Growth Temperature ◽  
High Growth ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Pit Formation ◽  
Movpe Growth

The effect of growth temperature and precursor flows on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching.

Raman Spectra and Strain Uniformity of Epitaxial Graphene Grown on SiC(0001)

2015 ◽  
Vol 821-823 ◽  
pp. 957-960
Author(s):  
Yan Fei Hu ◽  
Hui Guo ◽  
Yu Ming Zhang ◽  
Yi Men Zhang
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Raman Spectroscopy ◽  
Raman Spectra ◽  
Peak Position ◽  
Epitaxial Graphene ◽  
Large Area ◽  
Homogeneous Area ◽  
Few Layer Graphene ◽  
Scanning Electron

Large-area epitaxial graphene formed on C-face SiC has been investigated by Raman Spectroscopy and SEM (scanning electron microscopy). Local Raman spectra showed a large homogeneous area of high quality epitaxial FLG (few layer graphene) has been fabricated on C-face SiC. Our work reveals unexpectedly the shift in Raman peak position across the samples resulting from the inhomogeneity in the strains and impurities of the graphene films, which we exhibit to be correlated with physical topography by combining Raman spectroscopy with scanning electron microscopy (SEM)

Strain and Charge in Epitaxial Graphene on Silicon Carbide Studied by Raman Spectroscopy

2010 ◽  
Vol 645-648 ◽  
pp. 603-606 ◽  
Author(s):  
Jonas Röhrl ◽  
Martin Hundhausen ◽  
Florian Speck ◽  
Thomas Seyller
Keyword(s):  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Graphene Layer ◽  
Tensile Strain ◽  
Lattice Mismatch ◽  
Mechanical Strain ◽  
Epitaxial Graphene ◽  
Preparation Process ◽  
High Temperature Annealing ◽  
Graphene Layers

The phonon frequencies of epitaxial graphene on silicon carbide (SiC) depend on mechanical strain and charge transfer from the substrate to the epitaxial layer. Strain and doping depend on the preparation process and on the number of graphene layers. We measured the phonon frequencies by Raman spectroscopy and compare the results between epitaxial layers fabricated by high temperature annealing and by hydrogen intercalation of the covalently bound graphene layer of the 6 p 3 6 p 3 reconstructed SiC surface. Only the latter graphene layer shows tensile strain, which can partly be explained by lattice mismatch between substrate and epitaxial graphene.

Backside Monitoring of Graphene on Silicon Carbide by Raman Spectroscopy

2014 ◽  
Vol 778-780 ◽  
pp. 1166-1169
Author(s):  
Felix Fromm ◽  
Martin Hundhausen ◽  
Michl Kaiser ◽  
Thomas Seyller
Keyword(s):  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Raman Spectra ◽  
Graphene Layer ◽  
Scattered Light ◽  
Epitaxial Graphene ◽  
Raman Intensity ◽  
Top Down ◽  
Measurement Geometry

Raman spectroscopy is commonly applied for studying the properties of epitaxial graphene on silicon carbide (SiC). In principle, the Raman intensity of a single graphene layer is rather low compared to the signal of SiC. In this work we follow an approach to improve the Raman intensity of epitaxial graphene on SiC by recording Raman spectra in a top-down geometry, i.e. a geometry in which the graphene layer is probed with the excitation through the SiC substrate [1]. This technique takes advantage of the fact, that most of the Raman scattered light of the graphene is emitted into the SiC substrate. We analyze in detail the top-down measurement geometry regarding the graphene and SiC Raman intensity, as well as the influence of aberration effects caused by the refraction at the air/SiC interface.

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