Semiconducting behavior of niobium-doped titanium oxide in the amorphous state

2012 ◽  
Vol 100 (14) ◽  
pp. 142103 ◽  
Author(s):  
Kyung-Chul Ok ◽  
Joseph Park ◽  
Ju Ho Lee ◽  
Byung Du Ahn ◽  
Je Hun Lee ◽  
...  
Keyword(s):  
Titanium Oxide ◽  
Amorphous State ◽  
Niobium Doped ◽  
Semiconducting Behavior

scholarly journals Correction: Solution-processable, niobium-doped titanium oxide nanorods for application in low-voltage, large-area electronic devices

2018 ◽  
Vol 6 (10) ◽  
pp. 2604-2604
Author(s):  
F. A. Alharthi ◽  
F. Cheng ◽  
E. Verrelli ◽  
N. T. Kemp ◽  
A. F. Lee ◽  
...  
Keyword(s):  
Titanium Oxide ◽  
Low Voltage ◽  
Electronic Devices ◽  
Large Area ◽  
Oxide Nanorods ◽  
Niobium Doped ◽  
Solution Processable

Correction for ‘Solution-processable, niobium-doped titanium oxide nanorods for application in low-voltage, large-area electronic devices’ by F. A. Alharthi et al., J. Mater. Chem. C, 2018, 6, 1038–1047.

scholarly journals Niobium-doped titanium oxide anode and ionic liquid electrolyte for a safe sodium-ion battery

2016 ◽  
Vol 329 ◽  
pp. 428-431 ◽  
Author(s):  
Hiroyuki Usui ◽  
Yasuhiro Domi ◽  
Masahiro Shimizu ◽  
Akinobu Imoto ◽  
Kazuki Yamaguchi ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Titanium Oxide ◽  
Liquid Electrolyte ◽  
Sodium Ion ◽  
Sodium Ion Battery ◽  
Ionic Liquid Electrolyte ◽  
Niobium Doped ◽  
Oxide Anode

scholarly journals Author Correction: Novel niobium-doped titanium oxide towards electrochemical destruction of forever chemicals

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Jesse S. Ko ◽  
Nam Q. Le ◽  
Danielle R. Schlesinger ◽  
Dajie Zhang ◽  
James K. Johnson ◽  
...  
Keyword(s):  
Titanium Oxide ◽  
Niobium Doped

Preparation of Niobium-Doped Titanium Oxide Film by Liquid Phase Deposition

2007 ◽  
Vol 46 (4A) ◽  
pp. 1653-1655 ◽  
Author(s):  
Ming-Kwei Lee ◽  
Chung-Min Shih ◽  
Shih-Chang Fang ◽  
Hwei-Fu Tu ◽  
Chen-Lin Ho
Keyword(s):  
Liquid Phase ◽  
Oxide Film ◽  
Titanium Oxide ◽  
Liquid Phase Deposition ◽  
Titanium Oxide Film ◽  
Niobium Doped

Synthesis of High-K Titanium Oxide Thin Films Formed by Metalorganic Decomposition

1999 ◽  
Vol 606 ◽  
Author(s):  
Hisashi Fukuda ◽  
Yoshihiro Ishikawa ◽  
Seiogo Namioka ◽  
Shigeru Nomura
Keyword(s):  
Titanium Oxide ◽  
Integrated Circuit ◽  
Amorphous State ◽  
Voltage Measurement ◽  
Maximum Dielectric Constant ◽  
High K ◽  
Capacitance Voltage ◽  
Metalorganic Decomposition ◽  
Main Component ◽  
Deposited Films

AbstractTitanium oxide (TiO2) thin ftlms were formed on a Si substrate by metalorganic decomposition(MOD) at temperatures ranging from 600 to 1100°C. As-deposited films were in the amorphous state and were completely transformed after annealing at 600°C to a crystalline structure with anatase as its main component. During crystallization, a reaction between TiO2 and Si occurred at the interface, which resulted in the formation of a thin interfacial SiO2 layer. Capacitance-voltage measurement showed good dielectric properties with a maximum dielectric constant of 76 for films annealed at 700°C. For the crystallized TiO2 films, the interface trap density was 1 × 1011 cm−2 eV−1, and the leakage current was 1 × 10−8 A/cm2 at 0.2 MV/cm. The modified structure of TiO2/SiO2/Si is expected to be suitable for the dielectric layer in an integrated circuit in place of conventional SiO2 films.

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