Transfer-free graphene synthesis on sapphire by catalyst metal agglomeration technique and demonstration of top-gate field-effect transistors

2015 ◽  
Vol 107 (7) ◽  
pp. 073102 ◽  
Author(s):  
Makoto Miyoshi ◽  
Masaya Mizuno ◽  
Yukinori Arima ◽  
Toshiharu Kubo ◽  
Takashi Egawa ◽  
...  
2012 ◽  
Vol 152 (15) ◽  
pp. 1350-1358 ◽  
Author(s):  
Sae Byeok Jo ◽  
Jaesung Park ◽  
Wi Hyoung Lee ◽  
Kilwon Cho ◽  
Byung Hee Hong

Carbon ◽  
2013 ◽  
Vol 62 ◽  
pp. 312-321 ◽  
Author(s):  
Jin Heak Jung ◽  
Il Yung Sohn ◽  
Duck Jin Kim ◽  
Bo Yeong Kim ◽  
Mi Jang ◽  
...  

Sensors ◽  
2021 ◽  
Vol 21 (21) ◽  
pp. 7262
Author(s):  
Yamujin Jang ◽  
Young-Min Seo ◽  
Hyeon-Sik Jang ◽  
Keun Heo ◽  
Dongmok Whang

We report a novel graphene transfer technique for fabricating graphene field-effect transistors (FETs) that avoids detrimental organic contamination on a graphene surface. Instead of using an organic supporting film like poly(methyl methacrylate) (PMMA) for graphene transfer, Au film is directly deposited on the as-grown graphene substrate. Graphene FETs fabricated using the established organic film transfer method are easily contaminated by organic residues, while Au film protects graphene channels from these contaminants. In addition, this method can also simplify the device fabrication process, as the Au film acts as an electrode. We successfully fabricated graphene FETs with a clean surface and improved electrical properties using this Au-assisted transfer method.


2005 ◽  
Vol 871 ◽  
Author(s):  
Shinichi Kawamura ◽  
Manabu Yoshida ◽  
Satoshi Hoshino ◽  
Toshihide Kamata

AbstractThe relationship between impurity species included in regioregular poly(3-hexylthiophene) (P3HT) and the field effect transistors (FETs) property was investigated. P3HT synthesized by the Rieke method contained only Zn, Ni and Br (free halogen) as impurities. Several kinds of P3HT with different purities by using purification techniques were prepared, and those P3HT-FETs properties were estimated. As a result, it is revealed that the free halogen is effective dopant to increase the FET mobility, and the removal of the catalyst metal (Zn and Ni) is also effective to decrease off-current.


2019 ◽  
Vol 11 (6) ◽  
pp. 6336-6343 ◽  
Author(s):  
Chao-Hui Yeh ◽  
Po-Yuan Teng ◽  
Yu-Chiao Chiu ◽  
Wen-Ting Hsiao ◽  
Shawn S. H. Hsu ◽  
...  

2D Materials ◽  
2016 ◽  
Vol 3 (2) ◽  
pp. 021003 ◽  
Author(s):  
Hamin Park ◽  
Ick-Joon Park ◽  
Dae Yool Jung ◽  
Khang June Lee ◽  
Sang Yoon Yang ◽  
...  

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