Oxygen vacancy defect engineering using atomic layer deposited HfAlOx in multi-layered gate stack

2016 ◽  
Vol 108 (18) ◽  
pp. 183501 ◽  
Author(s):  
M. N. Bhuyian ◽  
R. Sengupta ◽  
P. Vurikiti ◽  
D. Misra
Keyword(s):  
Oxygen Vacancy ◽  
Atomic Layer ◽  
Vacancy Defect ◽  
Defect Engineering ◽  
Gate Stack

Surface oxygen vacancy and defect engineering of WO3 for improved visible light photocatalytic performance

2018 ◽  
Vol 8 (17) ◽  
pp. 4399-4406 ◽  
Author(s):  
Qi Liu ◽  
Fengjiao Wang ◽  
Huaxiang Lin ◽  
Yanyu Xie ◽  
Na Tong ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Visible Light ◽  
Photocatalytic Performance ◽  
Photogenerated Electron ◽  
Vacancy Defect ◽  
Surface Oxygen ◽  
Defect Engineering ◽  
Electron Hole ◽  
Surface Oxygen Vacancy ◽  
Visible Light Photocatalytic

Compared to the pristine WO3, the oxygen vacancy defect levels of the sub-stoichiometric WO3−X narrow the bandgap and promote the separation of photogenerated electron–hole pairs.

Surface oxygen vacancy defect engineering of p-CuAlO2via Ar&H2 plasma treatment for enhancing VOCs sensing performances

2019 ◽  
Vol 55 (78) ◽  
pp. 11691-11694 ◽  
Author(s):  
Bin Tong ◽  
Gang Meng ◽  
Zanhong Deng ◽  
Mati Horprathum ◽  
Annop Klamchuen ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Plasma Treatment ◽  
Vacancy Defect ◽  
Surface Oxygen ◽  
Defect Engineering ◽  
Surface Oxygen Vacancy ◽  
P Type

Ar&H2 plasma treatment offers a facile approach to engineer surface VO defects, which substantially enhance the VOCs responses of p-type delafossite CuAlO2 sensor.

scholarly journals Vacancy-Defect Modulated Pathway of Photoreduction of CO2 on Quaternary Single Atomically Thin AgInP2S6 Sheets toward Boosting Efficient and Selective Production of Value-Added Olefiant Gas

2021 ◽  
Author(s):  
Yong Zhou ◽  
Zhigang Zou ◽  
Wa Gao ◽  
Xiaoyong Wang ◽  
Qing Shen ◽  
...  
Keyword(s):  
Reaction Pathway ◽  
Co2 Reduction ◽  
Value Added ◽  
Catalytic Efficiency ◽  
Atomic Layer ◽  
Major Product ◽  
Vacancy Defect ◽  
Charge Carriers ◽  
Defect Engineering

Abstract The quaternary AgInP2S6 atomic layer with the thickness of ~ 0.70 nm were successfully synthesized through facile ultrasonic exfoliation of the corresponding bulk crystal. The ultrathin sheet exhibits efficiently photocatalytic conversion of CO2 into CO as a major product and minority of CH4 and C2H4 in the presence of water vapor. The sulfur defect engineering on this atomic layer through a H2O2 etch process can excitingly enable to change the CO2 photoreduction reaction pathway to steer dominant generation of ethene (C2H4) important chemical with the yield-based selectivity reaching ~73% and the electron-based selectivity as high as ~89%, and the quantum yield of 0.51% at wavelength of 415 nm. Both DFT calculation and in-situ FTIR demonstrate as the introduction of S vacancies in AgInP2S6 causes the charge accumulation on the Ag atoms near the S vacancies, the exposed Ag sites can thus effectively capture the forming *CO molecules, making the catalyst surface enrich with key reaction intermediates to lower the C-C binding coupling barrier, which facilitates the production of C2H4. Surface photovoltage measurement confirms that atomically ultrathin structure of the exfoliated AgInP2S6 can shorten the transfer distance of charge carriers from the interior onto the surface, thus decrease the recombination in body and improve the catalytic efficiency. This work may provide fresh insights into the design of atomically thin photocatalyst framework for CO2 reduction and establish an ideal platform for reaffirming the versatility of defect engineering in tuning catalytic activity and selectivity.

scholarly journals Vacancy-defect modulated pathway of photoreduction of CO2 on single atomically thin AgInP2S6 sheets into olefiant gas

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Wa Gao ◽  
Shi Li ◽  
Huichao He ◽  
Xiaoning Li ◽  
Zhenxiang Cheng ◽  
...  
Keyword(s):  
Dft Calculation ◽  
Catalyst Surface ◽  
Reaction Pathway ◽  
Atomic Layer ◽  
Vacancy Defect ◽  
Charge Accumulation ◽  
Reaction Intermediates ◽  
Defect Engineering ◽  
Promising Strategy

AbstractArtificial photosynthesis, light-driving CO2 conversion into hydrocarbon fuels, is a promising strategy to synchronously overcome global warming and energy-supply issues. The quaternary AgInP2S6 atomic layer with the thickness of ~ 0.70 nm were successfully synthesized through facile ultrasonic exfoliation of the corresponding bulk crystal. The sulfur defect engineering on this atomic layer through a H2O2 etching treatment can excitingly change the CO2 photoreduction reaction pathway to steer dominant generation of ethene with the yield-based selectivity reaching ~73% and the electron-based selectivity as high as ~89%. Both DFT calculation and in-situ FTIR spectra demonstrate that as the introduction of S vacancies in AgInP2S6 causes the charge accumulation on the Ag atoms near the S vacancies, the exposed Ag sites can thus effectively capture the forming *CO molecules. It makes the catalyst surface enrich with key reaction intermediates to lower the C-C binding coupling barrier, which facilitates the production of ethene.

Oxygen vacancy defect engineering in Mn-doped CeO2 nanostructures for nitrogen oxides emission abatement

2019 ◽  
Vol 476 ◽  
pp. 110512 ◽  
Author(s):  
Xiaolong Yu ◽  
Xiaomin Wu ◽  
Ziyi Chen ◽  
Zhiwei Huang ◽  
Guohua Jing
Keyword(s):  
Nitrogen Oxides ◽  
Oxygen Vacancy ◽  
Vacancy Defect ◽  
Defect Engineering ◽  
Emission Abatement ◽  
Doped Ceo2 ◽  
Mn Doped

scholarly journals Atomic Layer Deposition (ALD) of Metal Gates for CMOS

2019 ◽  
Vol 9 (11) ◽  
pp. 2388 ◽  
Author(s):  
Chao Zhao ◽  
Jinjuan Xiang
Keyword(s):  
Atomic Layer Deposition ◽  
Field Effect Transistors ◽  
Material Selection ◽  
Atomic Layer ◽  
Oxide Semiconductor ◽  
Metal Gate ◽  
Gate Stack ◽  
Short Channel ◽  
Metal Gates ◽  
Layer Deposition

The continuous down-scaling of complementary metal oxide semiconductor (CMOS) field effect transistors (FETs) had been suffering two fateful technical issues, one relative to the thinning of gate dielectric and the other to the aggressive shortening of channel in last 20 years. To solve the first issue, the high-κ dielectric and metal gate technology had been induced to replace the conventional gate stack of silicon dioxide layer and poly-silicon. To suppress the short channel effects, device architecture had changed from planar bulk Si device to fully depleted silicon on insulator (FDSOI) and FinFETs, and will transit to gate all-around FETs (GAA-FETs). Different from the planar devices, the FinFETs and GAA-FETs have a 3D channel. The conventional high-κ/metal gate process using sputtering faces conformality difficulty, and all atomic layer deposition (ALD) of gate stack become necessary. This review covers both scientific and technological parts related to the ALD of metal gates including the concept of effect work function, the material selection, the precursors for the deposition, the threshold voltage (Vt) tuning of the metal gate in contact with HfO2/SiO2/Si. The ALD of n-type metal gate will be detailed systematically, based mainly on the authors’ works in last five years, and the all ALD gate stacks will be proposed for the future generations based on the learning.

Identification of the oxygen-vacancy defect containing a single hydrogen atom in crystalline silicon

2000 ◽  
Vol 61 (7) ◽  
pp. 4659-4666 ◽  
Author(s):  
P. Johannesen ◽  
B. Bech Nielsen ◽  
J. R. Byberg
Keyword(s):  
Hydrogen Atom ◽  
Oxygen Vacancy ◽  
Crystalline Silicon ◽  
Vacancy Defect
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