scholarly journals Quantitative scanning spreading resistance microscopy on n-type dopant diffusion profiles in germanium and the origin of dopant deactivation

2019 ◽  
Vol 125 (8) ◽  
pp. 085105 ◽  
Author(s):  
Jan K. Prüßing ◽  
Gerry Hamdana ◽  
Dominique Bougeard ◽  
Erwin Peiner ◽  
Hartmut Bracht
Keyword(s):  
Dopant Diffusion ◽  
Spreading Resistance ◽  
Diffusion Profiles ◽  
Dopant Deactivation

Effect of Fluorine on the Dopant Diffusion of Through-Oxtoe Implanted Boron in Si - a Correlation with Microstructural Defects

1992 ◽  
Vol 262 ◽  
Author(s):  
J. G. Huang ◽  
A. Lam ◽  
R. J. Jaccodine
Keyword(s):  
Strain Gradient ◽  
Dopant Diffusion ◽  
Boron Diffusion ◽  
Spreading Resistance ◽  
Oxygen Precipitation ◽  
Microstructural Defects ◽  
Oxygen Atoms

ABSTRACTIn case of boron through-oxide implant, it has been shown that the knocked-in oxygen atoms segregate at initially nucleated dislocation sites during the incubation and no significant junction movement is detected. The trapping of oxygen proceeds up to a certain time at which oxygen-precipitation occurs and this leads to an ejection of excess Si interstitials and further enhancing boron diffusion. However, with fluorine addition we believe that fluorine incorporation in SiO2 and/or SiO2/Si interface not only releases the strain gradient but also suppresses the silicon interstitials ejection and by this means suppresses the oxidation-enhanced boron diffusion. Correlated results of TEM microdefect structures and spreading resistance profiles are used to further support our postulation.

Optimization of Si:C Source and Drain Formed by Post-Epi Implant and Activation Anneal: Experimental and Theoretical Analysis of Dopant Diffusion and C Evolution in High-C Si:C Epi Layers

2008 ◽  
Vol 1070 ◽  
Author(s):  
Yonah Cho ◽  
Victor Moroz ◽  
Nikolas Zographos ◽  
Sunderraj Thirupapuliyur ◽  
Lucien Date ◽  
...  
Keyword(s):  
Compact Modeling ◽  
Dopant Diffusion ◽  
X Ray Diffraction ◽  
Thermal Budget ◽  
X Ray ◽  
Layer Analysis ◽  
Physical Effects ◽  
Spike Anneal ◽  
High Level ◽  
Diffusion Profiles

ABSTRACTExperimental and simulated P and As dopant diffusion profiles in Si:C epi films containing high C (>1 atomic %) are presented. A new set of physical effects were incorporated to accurately model P or As diffusion in the presence of high level of C. Evolution of substitutional C (Csub) profile in the Si:C epi film through dopant implant and activation anneal was characterized by high-resolution x-ray diffraction (HRXRD) technique. Three-layer analysis was utilized to obtain non-uniform Csub profile. Dependency of Csub retention on anneal thermal budget is studied. It is shown the initial Csub in the epi layer is lost during dopant implantation and conventional spike anneal sequence. Use of advanced millisecond (ms) laser anneal resulted in near 100% Csub retention in P-implanted Si:C epi film without compromising junction depth. Measured Csub (by HRXRD) and total C (by SIMS) profiles are compared with the ones predicted by the newly developed compact modeling in this study.

scholarly journals The impact of focused ion beam induced damage on scanning spreading resistance microscopy measurements

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Komal Pandey ◽  
Kristof Paredis ◽  
Thomas Hantschel ◽  
Chris Drijbooms ◽  
Wilfried Vandervorst
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Region Of Interest ◽  
Amorphous Region ◽  
Impact Angle ◽  
Spreading Resistance ◽  
Energy Impact ◽  
The Impact ◽  
Dopant Deactivation

Abstract Scanning Spreading Resistance Microscopy is a well-established technique for obtaining quantitative two- and three-dimensional carrier profiles in semiconductor devices with sub-nm spatial resolution. However, for sub-100 nm devices, the use of focused ion beam becomes inevitable for exposing the region of interest on a sample cross section. In this work, we investigate the impact of the focused ion beam milling on spreading resistance analysis and we show that the electrical effect of the focused ion beam extends far beyond the amorphous region and depends on the dopant concentration, ion beam energy, impact angle, and current density. For example, for dopant concentrations between 1.0 × 1020 and 1.5 × 1016 cm−3 we observe dopant deactivation at least between 23 and 175 nm for a glancing 30 keV ion beam. Further, we show that dopant deactivation is caused by defect diffusion during milling and is not directly impacted by the presence of Gallium in the sample. Later, we also discuss potential ways to mitigate these effects.

Identification of Root Cause Failure in Silicon on Insulator Body Contacted nFETs Using Scanning Capacitance Microscopy and Scanning Spreading Resistance Microscopy

2006 ◽  
Author(s):  
J.S. McMurray ◽  
C.M. Molella
Keyword(s):  
The Body ◽  
Silicon On Insulator ◽  
Back Side ◽  
Cross Sectional ◽  
Plan View ◽  
Spreading Resistance ◽  
Scanning Capacitance Microscopy ◽  
Root Cause ◽  
Cross Sectional Imaging ◽  
Active Channel

Abstract Root cause for failure of 90 nm body contacted nFETs was identified using scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM). The failure mechanism was identified using both cross sectional imaging and imaging of the active silicon - buried oxide (BOX) interface in plan view. This is the first report of back-side plan view SCM and SSRM data for SOI devices. This unique plan view shows the root cause for the failure is an under doped link up region between the body contacts and the active channel of the device.

scholarly journals Transport and Electromechanical Properties of Ca3TaGa3Si2O14 Piezoelectric Crystals at Extreme Temperatures

MRS Advances ◽  
2019 ◽  
Vol 4 (09) ◽  
pp. 515-521
Author(s):  
Yuriy Suhak ◽  
Ward L. Johnson ◽  
Andrei Sotnikov ◽  
Hagen Schmidt ◽  
Holger Fritze
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Tone Burst ◽  
Total Conductivity ◽  
Transport Mechanisms ◽  
Electromechanical Properties ◽  
Self Diffusion ◽  
Oxygen Ion ◽  
Piezoelectric Strain ◽  
Secondary Ion ◽  
Diffusion Profiles

ABSTRACTTransport mechanisms in structurally ordered piezoelectric Ca3TaGa3Si2O14 (CTGS) single crystals are studied in the temperature range of 1000-1300 °C by application of the isotope 18O as a tracer and subsequent analysis of diffusion profiles of this isotope using secondary ion mass spectrometry (SIMS). Determined oxygen self-diffusion coefficients enable calculation of oxygen ion contribution to the total conductivity, which is shown to be small. Since very low contributions of the cations have to be expected, the total conductivity must be dominated by electron transport. Ion and electron conductivities are governed by different mechanisms with activation energies (1.9±0.1) eV and (1.2±0.07) eV, respectively. Further, the electromechanical losses are studied as a function of temperature by means of impedance spectroscopy on samples with electrodes and a contactless tone-burst excitation technique. At temperatures above 650 °C the conductivity-related losses are dominant. Finally, the operation of CTGS resonators is demonstrated at cryogenic temperatures and materials piezoelectric strain constants are determined from 4.2 K to room temperature.

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