scholarly journals Amplitudes of minima in dynamic conductance spectra of the SNS Andreev contact

2020 ◽  
Vol 128 (1) ◽  
pp. 013901 ◽  
Author(s):  
Z. Popović ◽  
S. Kuzmichev ◽  
T. Kuzmicheva
Keyword(s):  
Dynamic Conductance

scholarly journals A Dynamic Conductance Model of Fluorescent Lamp for Electronic Ballast Design Simulation

2005 ◽  
Vol 20 (5) ◽  
pp. 1178-1185 ◽  
Author(s):  
K.H. Loo ◽  
D.A. Stone ◽  
R.C. Tozer ◽  
R. Devonshire
Keyword(s):  
Fluorescent Lamp ◽  
Electronic Ballast ◽  
Dynamic Conductance

scholarly journals PSEUDO-GAP FEATURES OF INTRINSIC TUNNELING IN (HgBr2)-Bi2212 SINGLE CRYSTALS

1999 ◽  
Vol 13 (29n31) ◽  
pp. 3758-3763 ◽  
Author(s):  
AUGUST YURGENS ◽  
DAG WINKLER ◽  
TORD CLAESON ◽  
SEONG-JU HWANG ◽  
JIN-HO CHOY
Keyword(s):  
Temperature Dependence ◽  
Single Crystals ◽  
Room Temperature ◽  
Unit Cell ◽  
Superconducting Gap ◽  
Axis Direction ◽  
Temperature Range ◽  
Dynamic Conductance

The c-axis tunneling properties of both pristine Bi2212 and its HgBr 2 intercalate have been measured in the temperature range 4.2-250 K. Lithographically patterned 7-10 unit-cell heigh mesa structures on the surfaces of these single crystals were investigated. Clear SIS-like tunneling curves for current applied in the c-axis direction have been observed. The dynamic conductance d I/ d V(V) shows both sharp peaks corresponding to a superconducting gap edge and a dip feature beyond the gap, followed by a wide maximum, which persists up to a room temperature. Shape of the temperature dependence of the c-axis resistance does not change after the intercalation suggesting that a coupling between CuO 2-bilayers has little effect on the pseudogap.

Temperature and bias dependence of dynamic conductance—low resistive magnetic tunnel junctions

2004 ◽  
Vol 95 (2) ◽  
pp. 546-550 ◽  
Author(s):  
Bryan Oliver ◽  
Janusz Nowak
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Dynamic Conductance

scholarly journals Real-Time Anticipation and Prevention of Hot Spots by Monitoring the Dynamic Conductance of Photovoltaic Panels

2021 ◽  
Author(s):  
William Lamb ◽  
Dallon Asnes ◽  
Jonathan Kupfer ◽  
Emma Lickey ◽  
Jeremy Bakken ◽  
...  
Keyword(s):  
Real Time ◽  
Hot Spots ◽  
Structural Damage ◽  
Reverse Bias ◽  
Control Method ◽  
Physical Damage ◽  
Operating Current ◽  
A Cell ◽  
Real Time Simulations ◽  
Dynamic Conductance

<div>Hot spotting in photovoltaic (PV) panels causes physical damage, power loss, reduced lifetime reliability, and increased manufacturing costs. The problem arises routinely in defect-free standard panels; any string of cells that receives uneven illumination can develop hot spots, and the temperature rise often exceeds 100°C in conventional silicon panels despite on-panel bypass diodes, the standard mitigation technique. Bypass diodes limit the power dissipated in a cell subjected to reverse bias, but they do not prevent hot spots from forming. An alternative control method has been suggested by Kernahan [1] that senses in real time the dynamic conductance |dI/dV| of a string of cells and adjusts its operating current so that a partially shaded cell is never forced into reverse bias. We start by exploring the behavior of individual illuminated PV cells when externally forced into reverse bias. We observe that cells can suffer significant heating and structural damage, with desoldering of cell-tabbing and discolorations on the front cell surface. Then we test PV panels and confirm Kernahan’s proposed panel-level solution that anticipates and prevents hot spots in real time. Simulations of cells and panels confirm our experimental observations and provide insights into both the operation of Kernahan’s method and panel performance.</div>

DYNAMIC PROPERTIES OF SEQUENTIAL TUNNELING THROUGH DOUBLE-BARRIER SYSTEMS

1993 ◽  
Vol 07 (26) ◽  
pp. 1677-1686 ◽  
Author(s):  
L.Y. CHEN
Keyword(s):  
Power Density ◽  
Dynamic Properties ◽  
Low Frequency ◽  
Frequency Noise ◽  
Charge Accumulation ◽  
Significant Suppression ◽  
Finite Frequency ◽  
Double Barrier ◽  
Noise Current ◽  
Dynamic Conductance

In this paper, we present an analytical stochastical approach to the dynamic properties of sequential tunneling through double-barrier systems. The effect of charge accumulation is included in the investigation of dynamic conductance and noise current power density at finite frequency. Albeit in the sequential tunneling limit the quantum phase coherence of electron waves is destroyed by inelastic scattering while traversing the junction, the occupation of resonance states by fermionic particles sojourning in the well along with the charge accumulation within and around the structure still give rise to strong correlation among tunneling events. This correlation determines the characteristic frequency of the system and leads to significant suppression of shot noise. The low frequency noise current power density compares agreeably with experimental measurements.

Dynamic conductance of Ni80Fe20/AlOx/Ni80Fe20 tunnel junctions

2000 ◽  
Vol 87 (9) ◽  
pp. 5203-5205 ◽  
Author(s):  
Janusz Nowak ◽  
Dian Song ◽  
Ed Murdock
Keyword(s):  
Tunnel Junctions ◽  
Dynamic Conductance

scholarly journals Dynamic Conductance of Carbon Nanotubes

2000 ◽  
Vol 84 (13) ◽  
pp. 2921-2924 ◽  
Author(s):  
Christopher Roland ◽  
Marco Buongiorno Nardelli ◽  
Jian Wang ◽  
Hong Guo
Keyword(s):  
Carbon Nanotubes ◽  
Dynamic Conductance

Influence of drain-induced barrier lowering on the dynamic conductance of short-channel MOSFETs

1986 ◽  
Vol 22 (19) ◽  
pp. 1010 ◽  
Author(s):  
G. Ghibaudo ◽  
B. Cabon
Keyword(s):  
Short Channel ◽  
Dynamic Conductance
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